LMP1520AK LEIDITECH

Document overview

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Technical content

Description

Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R DS(ON) and Q g . This device is ideal for high-frequency switching and synchronous rectification. General Features

  • V DS =150V,I D =20A R DS(ON) =56mΩ (typical) @ V GS =10V R DS(ON) =68mΩ (typical) @ V GS =4.5V
  • Excellent gate charge x R DS(on) product(FOM)
  • Very low on-resistance R DS(on)
  • 175 °C operating temperature
  • Pb-free lead plating
  • 100% UIS tested Application
  • LED backlighting
  • Ideal for high-frequency switching and synchronous rectification 100% UIS TESTED! Schematic diagram Marking and pin assignment TO-252 -2Ltop view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity NCEP1520AK LMP1520AK TO-252-2L Ø330mm 12mm 2500 units Absolute Maximum Ratings (T A =25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 150 V Gate-Source Voltage V GS ±20 V Drain Current-Continuous I D 20 A Drain Current-Continuous(T C =100 )℃ I D (100℃) 14 A Pulsed Drain Current I DM 80 A Maximum Power Dissipation P D 68 W Derating factor

0.45 W/ ℃

Single pulse avalanche energy (Note 5) E AS 30 mJ Operating Junction and Storage Temperature Range T J STG -55 To 175 ℃ Super Trench Power MOSFET N-Channel LMP1520AK Rev : www.leiditech.com 01.06.2018 1/6

Thermal Resistance,Junction-to-Case (Note 2) R θJC 2.2 /W℃ Electrical Characteristics (T A =25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V I D =250μA 150 - - V Zero Gate Voltage Drain Current I DSS V DS =150V,V GS =0V - - 1 μA Gate-Body Leakage Current I GSS V GS =±20V,V DS =0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS GS D =250μA 1.3 1.9 2.5 V V GS =10V, I D =10A - 56 62 Drain-Source On-State Resistance R DS(ON) V GS =4.5V, I D =10A 68 82 mΩ Forward Transconductance g FS V DS =5V,I D =10A - 15 - S Dynamic Characteristics (Note4) Input Capacitance C lss - 799 PF Output Capacitance C oss - 74.4 PF Reverse Transfer Capacitance C rss V DS =75V,V GS =0V, F=1.0MHz - 11.1 PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 10.5 - nS Turn-on Rise Time t r - 6 - nS Turn-Off Delay Time t d(off) - 14.5 - nS Turn-Off Fall Time t f V DD =75V, R L =7.5Ω V GS =10V,R G =3Ω - 3.5 - nS Total Gate Charge Q g - 15 - nC Gate-Source Charge Q gs - 4.5 - nC Gate-Drain Charge Q gd V DS =75V,I D =10A, V GS =10V - 3 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS =0V,I S =10A - - 1.2 V Diode Forward Current (Note 2) I S - - 20 A Reverse Recovery Time t rr - 29.5 - nS Reverse Recovery Charge Qrr T J = 25°C, I F = I S di/dt = 100A/μs (Note3) - 132 - nC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 5. EAS condition : Tj=25 ,V℃ DD =50V,V G =10V,L=0.5mH,Rg=25Ω LMP1520AK Rev : www.leiditech.com 01.06.2018 2/6

1) E AS test Circuit 2) Gate charge test Circuit 3) Switch Time Test Circuit LMP1520AK Rev : www.leiditech.com 01.06.2018 3/6

Dimensions In Millimeters Dimensions In Inches Symbol Min. Max. Min. Max. A 2.200 2.400 0.087 0.094 A1 0.000 0.127 0.000 0.005 b 0.660 0.860 0.026 0.034 c 0.460 0.580 0.018 0.023 D 6.500 6.700 0.256 0.264 D1 5.100 5.460 0.201 0.215 D2 4.83 TYP. 0.190 TYP. E 6.000 6.200 0.236 0.244 e 2.186 2.386 0.086 0.094 L 9.800 10.400 0.386 0.409 L1 2.900 TYP. 0.114 TYP. L2 1.400 1.700 0.055 0.067 L3 1.600 TYP. 0.063 TYP. L4 0.600 1.000 0.024 0.039 Φ 1.100 1.300 0.043 0.051 θ 0° 8° 0° 8° h 0.000 0.300 0.000 0.012 V 5.350 TYP. 0.211 TYP. LMP1520AK Shanghai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86- 021 50477059 Rev : www.leiditech.com 01.06.2018 6/6