LMP0160AG LEIDITECH

Document overview

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Technical content

Description

Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R DS(ON) and Q g . This device is ideal for high-frequency switching and synchronous rectification. General Features

  • V DS =100V,I D =60A R DS(ON) <8.5mΩ @ V GS =10V R DS(ON) <12.0mΩ @ V GS =4.5V
  • Excellent gate charge x R DS(on) product(FOM)
  • Very low on-resistance R DS(on)
  • 175 °C operating temperature
  • Pb-free lead plating
  • 100% UIS tested Application
  • DC/DC Converter
  • Ideal for high-frequency switching and synchronous rectification Schematic Diagram 100% UIS TESTED! 100% ∆Vds TESTED! Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity - - Absolute Maximum Ratings (T C =25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ±20 V Drain Current-Continuous (Package Limited) I D 60 A Drain Current-Continuous(T C =100 )℃ I D (100℃) 42.5 A Pulsed Drain Current I DM 240 A Maximum Power Dissipation P D 105 W Derating factor

0.84 W/ ℃

Single pulse avalanche energy (Note 5) E AS 250 mJ Operating Junction and Storage Temperature Range T J STG -55 To 150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Case (Note 2) R θJC 1.2 /W℃ D D D D G S S S LMP0160AG Enhancement Mode Power MOSFET N-Channel Bottom View LMP0160AG DFN5X6-8L - Rev : www.leiditech.com 01.06.2018 1/6

Electrical Characteristics (T C =25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V I D =250μA 100 - V Zero Gate Voltage Drain Current I DSS V DS =100V,V GS =0V - - 1 μA Gate-Body Leakage Current I GSS V GS =±20V,V DS =0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS GS D =250μA 1.0 1.7 2.2 V V GS =10V, I D =30A - 7.2 8.5 Drain-Source On-State Resistance R DS(ON) V GS =4.5V, I D =30A - 9.5 12.0 mΩ Forward Transconductance g FS V DS =10V,I D =30A 40 - - S Dynamic Characteristics (Note4) Input Capacitance C lss - 4200 - PF Output Capacitance C oss - 354 - PF Reverse Transfer Capacitance C rss V DS =50V,V GS =0V, F=1.0MHz - 23 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 15 - nS Turn-on Rise Time t r - 10 - nS Turn-Off Delay Time t d(off) - 41 - nS Turn-Off Fall Time t f V DD =50V,I D =30A V GS =10V,R G =4.7Ω - 6 - nS Total Gate Charge Q g - 65 nC Gate-Source Charge Q gs - 15.3 nC Gate-Drain Charge Q gd V DS =50V,I D =30A, V GS =10V - 9 nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS =0V,I S =60A - 1.2 V Diode Forward Current (Note 2) I S - - 60 A Reverse Recovery Time t rr - 101 nS Reverse Recovery Charge Qrr T J = 25°C, I F = I S di/dt = 100A/μs (Note3) - 193 nC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 5. EAS condition : Tj=25 ,V℃ DD =50V,V G =10V,L=0.5mH,Rg=25Ω LMP0160AG Rev : www.leiditech.com 01.06.2018 2/6

1) E AS test Circuit 2) Gate charge test Circuit 3) Switch Time Test Circuit LMP0160AG Rev : www.leiditech.com 01.06.2018 3/6

Shanghai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86- 021 50477059 Rev : www.leiditech.com 01.06.2018 6/6