LMFB108N10 LEIDITECH

Document overview

  • Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 6

Technical content

Description

Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R DS(ON) and Q g . This device is ideal for high-frequency switching and synchronous rectification. General Features

  • V DS =100V,I D =108A R DS(ON) <6.5mΩ @ V GS =10V
  • Excellent gate charge x R DS(on) product(FOM)
  • Very low on-resistance R DS(on)
  • 175 °C operating temperature
  • Pb-free lead plating
  • 100% UIS tested Application
  • DC/DC Converter
  • Ideal for high-frequency switching and synchronous rectification 100% UIS TESTED! 100% ∆Vds TESTED! Schematic diagram Marking and pin assignment TO-220-3L top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity NCEP01T11 LMFB108N10 TO-220-3L - - - Absolute Maximum Ratings (T C =25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ±20 V Drain Current-Continuous I D 108 A Drain Current-Continuous(T C =100 )℃ I D (100℃) 78 A Pulsed Drain Current I DM 380 A Maximum Power Dissipation P D 160 W Derating factor

1.1 W/℃

Single pulse avalanche energy (Note 5) E AS 676 mJ Super Trench Power MOSFET Rev : www.leiditech.com 01.06.2015 N-Channel

Operating Junction and Storage Temperature Range T J STG -55 To 175 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Case (Note 2) R θJC 0.94 /W℃ Electrical Characteristics (T C =25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V I D =250μA 100 - V Zero Gate Voltage Drain Current I DSS V DS =100V,V GS =0V - - 1 μA Gate-Body Leakage Current I GSS V GS =±20V,V DS =0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS GS D =250μA 2.5 - 4.5 V Drain-Source On-State Resistance R DS(ON) V GS =10V, I D =50A - 5.7 6.5 mΩ Forward Transconductance g FS V DS =10V,I D =50A 40 - - S Dynamic Characteristics (Note4) Input Capacitance C lss - 5200 - PF Output Capacitance C oss - 790 - PF Reverse Transfer Capacitance C rss V DS =50V,V GS =0V, F=1.0MHz - 47 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 13.8 - nS Turn-on Rise Time t r - 13 - nS Turn-Off Delay Time t d(off) - 39 - nS Turn-Off Fall Time t f V DD =50V,I D =50A V GS =10V,R G =4.7Ω - 14 - nS Total Gate Charge Q g - 60 nC Gate-Source Charge Q gs - 21 nC Gate-Drain Charge Q gd V DS =50V,I D =50A, V GS =10V - 11 nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS =0V,I S =108A - 1.2 V Diode Forward Current (Note 2) I S - - 108 A Reverse Recovery Time t rr - 74 nS Reverse Recovery Charge Qrr T J = 25°C, I F = I S di/dt = 100A/μs (Note3) - 176 nC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 5. EAS condition : Tj=25 ,V℃ DD =50V,V G =10V,L=0.5mH,Rg=25Ω Rev : www.leiditech.com 01.06.2015 LMFB108N10

1) E AS test Circuit 2) Gate charge test Circuit 3) Switch Time Test Circuit Rev : www.leiditech.com 01.06.2015 LMFB108N10

Dimensions In Millimeters Dimensions In Inches Symbol Min. Max. Min. Max. A 4.400 4.600 0.173 0.181 A1 2.250 2.550 0.089 0.100 b 0.710 0.910 0.028 0.036 b1 1.170 1.370 0.046 0.054 c 0.330 0.650 0.013 0.026 c1 1.200 1.400 0.047 0.055 D 9.910 10.250 0.390 0.404 E 8.9500 9.750 0.352 0.384 E1 12.650 12.950 0.498 0.510 e 2.540 TYP. 0.100 TYP. e1 4.980 5.180 0.196 0.204 F 2.650 2.950 0.104 0.116 H 7.900 8.100 0.311 0.319 h 0.000 0.300 0.000 0.012 L 12.900 13.400 0.508 0.528 L1 2.850 3.250 0.112 0.128 V 7.500 REF. 0.295 REF. Φ 3.400 3.800 0.134 0.150 Shanghai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86- 021 50477059 Rev : www.leiditech.com 01.06.2015 LMFB108N10