LMD80N03A LEIDITECH

Document overview

  • Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

  • VDS 30V
  • ID 80A
  • RDS(ON)( at VGS=10V) ＜4.5mohm
  • RDS(ON)( at VGS=4.5V) ＜6.0mohm
  • 100% UIS Tested
  • 100% ▽VDS Tested General Description
  • Trench Power LV MOSFET technology
  • Excellent package for heat dissipation
  • High density cell design for low RDS(ON)

Applications

  • High current load applications
  • Load switching
  • Hard switched and high frequency circuits
  • Uninterruptible power supply ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage VDS 30 V Gate-source Voltage VGS ±20 V Drain Current TC=25℃ ID A TC=100℃ 56 Pulsed Drain Current A IDM 190 A Total Power Dissipation TC=25℃ PD 54 W TC=100℃ 27 W Single Pulse Avalanche Energy B EAS 225 mJ Thermal Resistance Junction-to-Case C RθJC 2.8 ℃/ W Junction and Storage Temperature Range TJ ,TSTG -55～+175 ℃ ■ Ordering Information (Example) PREFERED P/N PACKING CODE Marking MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE F2 YJD80N03A 2500 / 25000 13“ reel LMD80N03A N-Channel Enhancement Mode Power MOSFET LMD80N03A Rev : www.leiditech.com 01.06.2018

■ Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units Static Parameter Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=250μA 30 V Zero Gate Voltage Drain Current IDSS VDS=30V,VGS=0V 1 μA Gate-Body Leakage Current IGSS VGS= ±20V, VDS=0V ±100 nA Gate Threshold Voltage VGS(th) VDS= VGS, ID=250μA 1.0 1.5 2.5 V Static Drain-Source On-Resistance RDS(ON) VGS= 10V, ID=15A 3.6 4.5 mΩ VGS= 4.5V, ID=15A 4.7 6.0 Diode Forward Voltage VSD IS=20A,VGS=0V 0.85 1.2 V Maximum Body-Diode Continuous Current IS 80 A Dynamic Parameters Input Capacitance Ciss VDS=15V,VGS=0V,f=1MHZ 1620 pF Output Capacitance Coss 336 Reverse Transfer Capacitance Crss 195 Switching Parameters Total Gate Charge Qg VGS=10V,VDS=15V,ID=20A 55.7 nC Gate-Source Charge Qgs 13 Gate-Drain Charge Qgd 11.3 Reverse Recovery Charge Qrr IF=20A, di/dt=100A/us Reverse Recovery Time trr 31 ns Turn-on Delay Time tD(on) VGS=10V,VDD=20V, ID=2A,RL=1Ω RGEN=3Ω Turn-on Rise Time tr 21 Turn-off Delay Time tD(off) 29 Turn-off fall Time tf 7 A. Pulse Test: Pulse Width≤300us,Duty cycle ≤2%. B. Tj=25℃, VDD=20V, VG=10V, L=0.5mH, Rg=25Ω C. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design, while RθJA is determined by the board design. The maximum rating presented here is based on mounting on a 1 in 2 pad of 2oz copper. LMD80N03A Rev : www.leiditech.com 01.06.2018

■ Typical Performance Characteristics Figure1. Output Characteristics Figure2. Transfer Characteristics Figure3. Capacitance Characteristics Figure4. Gate Charge Figure5. Drain-Source on Resistance Figure6. Drain-Source on Resistance LMD80N03A Rev : www.leiditech.com 01.06.2018

Figure7. Safe Operation Area Figure8. Switching wave LMD80N03A Rev : www.leiditech.com 01.06.2018

■ TO-252 Package information LMD80N03A Shanghai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86- 021 50477059 Rev : www.leiditech.com 01.06.2018