LMD0139 LEIDITECH

Document overview

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Technical content

Symbol Parameter Rating Units VDS Drain-Source Voltage -100 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ -10V1 -30 A ID@TC=100℃ Continuous Drain Current, VGS @ -10V1 -19 A IDM Pulsed Drain Current2 -100 A EAS Single Pulse Avalanche Energy3 185 mJ IAS Avalanche Current -28 A PD@TC=25℃ Total Power Dissipation4 102 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction-Ambient 1 --- 62 ℃/W RθJC Thermal Resistance Junction-Case1 --- 1.2 ℃/W VDS -100 V RDS(ON),typ 42 mΩ ID -30 A The uses advanced trench MOSFET technology to provide excellent R DS(ON) and gate charge for use in a wide variety of other applications. The meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. ⚫ 100% EAS Guaranteed ⚫ Green Device Available ⚫ Super Low Gate Charge ⚫ Excellent CdV/dt effect decline ⚫ Advanced high cell density Trench technology

Description

Enhancement Mode Fieid Effect Transistor P-Channel LMD0139 Rev 2.0 : www.leiditech.com 12.01.2019 1/5 LMD0139 LMD0139

Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -100 --- --- V RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V , ID=-10A --- 42 50 VGS=-4.5V , ID=-8A --- 46 55 VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -1.2 -1.8 -2.5 V IDSS Drain-Source Leakage Current VDS=-100V , VGS=0V , TJ=25℃ --- --- -50 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-10V , ID=-10A --- 32 --- S Qg Total Gate Charge VDS=-80V , VGS=-10V , ID=-14A --- 92 --- nC Qgs Gate-Source Charge --- 17.5 --- Qgd Gate-Drain Charge --- 14 --- Td(on) Turn-On Delay Time VDD=-50V , VGS=-10V , RG=3.3, ID=-14A --- 20.5 --- ns Tr Rise Time --- 32.2 --- Td(off) Turn-Off Delay Time --- 123 --- Tf Fall Time --- 63.7 --- Ciss Input Capacitance VDS=-25V , VGS=0V , f=1MHz --- 6516 --- pF Coss Output Capacitance --- 223 --- Crss Reverse Transfer Capacitance --- 125 --- Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current1,5 VG=VD=0V , Force Current --- --- -30 A VSD Diode Forward Voltage2 VGS=0V , IS=-1A , TJ=25℃ --- --- 1.2 V trr Reverse Recovery Time IF=-14A , di/dt=-100A/µs , TJ=25℃ --- 31.2 --- nS Qrr Reverse Recovery Charge --- 31.97 --- nC Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.88mH,IAS=-28A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Diode Characteristics LMD0139 Rev 2.0 : www.leiditech.com 12.01.2019 2/5

Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage Fig.3 Typical S-D Diode Forward Voltage Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ LMD0139 Rev 2.0 : www.leiditech.com 12.01.2019 3/5

Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Waveform LMD0139 Rev 2.0 : www.leiditech.com 12.01.2019 4/5

Part Number Package code Packaging TO252 2500/Tape&Reel

Ordering Information

ai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86- 021 50477059 Rev 2.0 : www.leiditech.com 12.01.2019 5/5