LMB772 LEIDITECH
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
FEATURES
MAXIMUM RATINGS (T A =25℃ unless otherwise noted) Symbol Para meter Value Units V CBO Collector-Base Voltage -40 V V CEO Collector-Emitter Voltage -30 V V EBO Emitter-Base Voltage -5 V I C Collector Current -Continuous -3 A P C Collector Power Dissipation 0.5 W T j Junction Temperature 150 ℃ T stg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s M I N T Y P M A X U N I T Collector-base breakdown voltage V (BR)CBO I C =-100μA ,I E =0 -40 V Collector-emitter breakdown voltage V (BR)CEO I C = -10mA , I B =0 -30 V Emitter-base breakdown voltage V (BR)EBO I E = -100μA,I C =0 -5 V Collector cut-off current I CBO V CB = -40V, I E =0 -1 μA Collector cut-off current I CEO V CE =-30V, I B =0 -10 μA Emitter cut-off current I EBO V EB =-6V, I C =0 -1 μA DC current gain h FE V CE = -2V, I C = -1A 60 400 Collector-emitter saturation voltage V CE(sat) I C =-2A, I B = -0.2A -0.5 V Base-emitter saturation voltage V BE(sat) I C =-2A, I B = -0.2A -1.5 V Transition frequency f T V CE = -5V, I C =-0.1A f =10MHz
80 MHz
Range 60-120 100-200 160-320 200-400 SOT-89 BASE COLLETOR EMITTER LMB772 Rev 2.0 : www.leiditech.com 12.01.2019 1/3 TRANSISTOR (PNP)
T ypical characteristics LMB772 Rev
A 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0. 020 b1 0.400 0.580 0.016 0.023 c 0.350 0.440 0.014 0.017 D 4.400 4.600 0.173 0.181 E 2.300 2.600 0.091 0.102 E1 3.940 4.250 0.155 0.167 e L 0.900 1.200 0.035 0.047 Symbol Dimensions In Millimeters Dimensions In Inches 1.550 REF. 0.061 REF. 1.500 TYP. 0.060 TYP. 3.000 TYP. 0.118 TYP. SOT-89-3LSuggested Pad Layout .500 .400 .8000 .900 .950 .300 .700 .600 .200 45° Sha nghai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86- 021 50477059 Rev