LMAK26P06 LEIDITECH

Document overview

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Technical content

PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape width Quantity LMAK26P06 TO-252 - - - ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS -60 V Gate-Source Voltage V GS ±20 V I D (25 -26 A I D (70 -20 A Drain Current-Continuous@ Current-Pulsed (Note 1) I DM -60 A Maximum Power Dissipation P D 60 W Operating Junction and Storage Temperature Range T J STG -55 To 175 ℃ THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) R θJA 25 ℃/W ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS =0V I D =-250μA -60 V GENERAL FEATURES

  • V DS =- 60V,I D =-26A R DS(ON) < 40mΩ @ V GS =-10V R DS(ON) < 55mΩ @ V GS =-4.5V
  • High Power and current handing capability
  • Lead free product is acquired
  • Surface Mount Package

DESCRIPTION

The SSFD6035 uses advanced trench technology to provide excellent R DS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. Application

  • PWM applications
  • Load switch
  • Power management Enhancement Mode Fieid Effect Transistor P-Channel LMAK26P06 Rev 2.0 : www.leiditech.com 12.01.2019 1/6 TO-252 Schematic diagram D G S D G S

V =-48V,V =0V -1 μA Zero Gate Voltage Drain Current I DSS DS GS Gate-Body Leakage Current I V =±20V,V =0V ±100 nA GSS GS DS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V =V GS(th) DS GS D V =-10V, I GS D =-20A 31 40 mΩ Drain-Source On-State Resistance R DS(ON) V =-4.5V, I GS D =-20A 42 55 mΩ Forward Transconductance g V =-5V,I FS DS D =-20A 5 S DYNAMIC CHARACTERISTICS (Note4) Input Capacitance C 3060 PF lss Output Capacitance C oss 300 PF V =-30V,V Reverse Transfer Capacitance C rss DS GS =0V, F=1.0MHz 205 PF SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time t 14 nS d(on) Turn-on Rise Time t 20 nS r Turn-Off Delay Time t d(off) 40 nS V =-30V,V =-10V,R Turn-Off Fall Time t f DS GS GEN =3Ω I D =1A 19 nS Total Gate Charge Q 48 nC g Gate-Source Charge Q gs 11 nC V =-30V,I Gate-Drain Charge Q gd DS D =-20A,V =-10V GS 10 nC Body Diode Reverse Recovery Time T 40 nS rr I F =-20A, dI/dt=100A/µs Body Diode Reverse Recovery Charge Q 56 nC rr DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) V V =0V,I =-1A -0.72 -1 V SD GS S NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on 1in FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. Rev 2.0 : www.leiditech.com 12.01.2019 2/6 LMAK26P06

UNITS:mm NOTES 1. Dimensions are inclusive of plating 2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 3. Dimension L is measured in gauge plane. 4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. Shanghai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86- 021 50477059 Rev 2.0 : www.leiditech.com 12.01.2019 6/6 ■ TO-252 Package information LMAK26P06