LM8S10N10 LEIDITECH

Document overview

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Technical content

Description

The LM8S10N10 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications. General Features

  • V DS = 100V,I D =10A R DS(ON) < 17mΩ @ V GS =10V (Typ:14m Ω) R DS(ON) < 20mΩ @ V GS =4.5V (Typ:15.2m Ω)
  • Special process technology for high ESD capability
  • High density cell design for ultra low Rdson
  • Fully characterized avalanche voltage and current Application
  • DC/DC Primary Side Switch
  • Telecom/Server
  • Synchronous Rectification Schematic diagram Marking and pin assignment SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity NCE0110AS LM8S10N10 SOP-8 Ø330mm 12mm 4000units Absolute Maximum Ratings (T A =25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ±20 V Drain Current-Continuous I D 10 A Drain Current-Continuous(T C =100℃) I D (100℃) 7 A Pulsed Drain Current I DM 70 A Maximum Power Dissipation P D 3.1 W Operating Junction and Storage Temperature Range T J STG -55 To 150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) R θJA 40 /W℃ Rev : 01.06.2014 /6 www.leiditech.com Enhancement Mode Power MOSFET N-Channel

Electrical Characteristics (T A =25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V I D =250μA 100 110 - V Zero Gate Voltage Drain Current I DSS V DS =100V,V GS =0V - - 1 μA Gate-Body Leakage Current I GSS V GS =±20V,V DS =0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS GS D =250μA 0.9 1.3 1.8 V V GS =10V, I D =10A - 14 17 m Ω Drain-Source On-State Resistance R DS(ON) V GS =4.5V, I D =10A - 15.2 20 m Ω Forward Transconductance g FS V DS =10V,I D =10A - 26 - S Dynamic Characteristics (Note4) Input Capacitance C lss 3000 3835 4200 PF Output Capacitance C oss - 178 - PF Reverse Transfer Capacitance C rss V DS =50V,V GS =0V, F=1.0MHz - 153 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 13 - nS Turn-on Rise Time t r - 14 - nS Turn-Off Delay Time t d(off) - 25 - nS Turn-Off Fall Time t f V DD =50V,I D =10A,R L =5Ω, R G =1Ω,V GS =10V - 10 - nS Total Gate Charge Q g - 90 - nC Gate-Source Charge Q gs - 10 - nC Gate-Drain Charge Q gd I D =10A,V DD =50V,V GS =10V - 24 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS =0V,I S =10A - 0.85 1.2 V Diode Forward Current (Note 2) I S - - 10 A Reverse Recovery Time t rr - 33 nS Reverse Recovery Charge Qrr T J = 25°C, I F = 10A di/dt = 100A/μs (Note3) - 54 nC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production Rev : 01.06.2014 /6 www.leiditech.com LM8S10N10

1）E AS test Circuit 2）Gate charge test Circuit 3）Switch Time Test Circuit Rev : 01.06.2014 /6 www.leiditech.com LM8S10N10

Dimensions In Millimeters Dimensions In Inches Symbol Min. Max. Min. Max. A 1.350 1.750 0.053 0.069 A1 0.100 0.250 0.004 0.010 A2 1.350 1.550 0.053 0.061 b 0.330 0.510 0.013 0.020 c 0.170 0.250 0.006 0.010 D 4.700 5.100 0.185 0.200 E 3.800 4.000 0.150 0.157 E1 5.800 6.200 0.228 0.244 e 1.270(BSC) 0.050(BSC) L 0.400 1.270 0.016 0.050 θ 0° 8 ° 0 ° 8 ° Shanghai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86- 021 50477059 Rev : 01.06.2014 6/6 www.leiditech.com LM8S10N10