LM8P20D LEIDITECH
Document overview
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Technical content
FEATURES
Fast switching 100% avalanche tested Improved dv/dt capability
APPLICATIONS
Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking LM8P20F TO-220F LM8P20P TO-220 LM8P20U TO-251 LM8P20D TO-252 Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit TO-220 TO-220F TO-251 TO-252 Drain-Source Voltage (VGS = 0V) VDSS -200 V Continuous Drain Current ID -8 A Pulsed Drain Current (note1) IDM -32 A Gate-Source Voltage VGSS ±30 V Single Pulse Avalanche Energy (note2) EAS 115 mJ Avalanche Current (note1) IAS 5 A Repetitive Avalanche Energy (note1) EAR 69 mJ Power Dissipation (TC = 25ºC) PD 54 83 W Operating Junction and Storage Temperature Range TJ, Tstg -55~+150 ºC Thermal Resistance Parameter Symbol Value Unit TO-220 TO-251 TO-252 TO-220F Thermal Resistance, Junction-to-Case RthJC 2.3 1.5 K/W Thermal Resistance, Junction-to-Ambient RthJA 62.5 60 LM8P20D Enhancement Mode Power MOSFET P-Channel Rev : www.leiditech.com 01.06.2018 1/9
Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250µA -200 -- -- V Zero Gate Voltage Drain Current IDSS VDS =-200V, VGS = 0V, TJ = 25ºC -- -- 1 μA Gate-Source Leakage IGSS VGS = ±30V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250µA -4.0 -- -2.0 V Drain-Source On-Resistance (Note3) RDS(on) VGS = -10V, ID = -4.0A -- 0.4 0.75 Ω Dynamic Input Capacitance Ciss VGS = 0V, VDS = -25V, f = 1.0MHz -- 503 -- pFOutput Capacitance Coss -- 104 -- Reverse Transfer Capacitance Crss -- 59 -- Total Gate Charge Qg VDD = -160V, ID = -8A, VGS = -10V -- 31 -- nCGate-Source Charge Qgs -- 3.3 -- Gate-Drain Charge Qgd -- 16.5 -- Turn-on Delay Time td(on) VDD = -100V, ID =-8A, RG = 25 Ω -- 35 -- ns Turn-on Rise Time tr -- 20 -- Turn-off Delay Time td(off) -- 150 -- Turn-off Fall Time tf -- 36 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25 ºC -- -- -8 A Pulsed Diode Forward Current ISM -- -- -32 Body Diode Voltage VSD TJ = 25ºC, ISD = 4.0A, VGS = 0V -- -- 1.4 V Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 10mH, VDD = 30V, RG = 25 Ω, Starting TJ = 25 ºC 3. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1% LM8P20D Rev : www.leiditech.com 01.06.2018 2/9
Figure A：Gate Charge Test Circuit and Waveform Figure B：Resistive Switching Test Circuit and Waveform Figure C：Unclamped Inductive Switching Test Circuit and Waveform LM8P20D Rev : www.leiditech.com 01.06.2018 5/9
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ai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86- 021 50477059 Rev : www.leiditech.com 01.06.2018 9/9