LM8803P201 LEIDITECH

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Technical content

z Lead Free Product is Acquired z Surface Mount Package z P-Channel Switch with Low R DS(on z Operated at Low Logic Level Gate Drive z ESD Protected Gate z Complementary to CJAA3134K MARKING: ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless other wise noted) 1.GA TE 2.SOURCE 3.DRAIN Equivalent Circuit APPLICA TION z Load/ Power Switching z I n t e r f a c i n g S w i t c h i n g z Battery Management for Ultra Small Portable Electronics z Logic Level Shift V(BR )DSS RDS(o n)MAX ID 560mΩ@-4.5V -0.6A780mΩ@ -2.5V 950mΩ(TYP)@ -1.8V Para meter Symbol Value Unit Drain-Source Voltage VDS -25 V Typical Gate-Source V oltage VGS ±12 V Conti nuous Drain Current (note 1) ID -0.6 A Pulse d Drain Current (tp=10us) IDM -1.2 A Po wer Dissipation (note 2) PD 100 mW Thermal Resistance from Junction to Ambient (note 1) RθJA 1250 ℃/W Operation Junction and Storage Temperature Range ℃ TJ,TSTG -55~ 150 Lea d Temperature for Soldering Purposes(1/8’’ from case for 10 s) T L 260 ℃ 25V LM8803P201 Enhancement Mode Power MOSFET P-Channel DFN1006-3 Rev

tes : 1.Surface mounted on FR4 board using the minimum recommended pad size. 2. Pulse Test : Pulse width=300μs, duty cycle≤2%. 3. Switching characteristics are independent of operating junction temperatures. 4. Graranted by design，not subject to producting. MOSFET ELECTRICAL CHARACTERISTICS aT =25 ℃ unless otherwise specified Para meter Symbol Test Condition Min Typ Max Unit ST ATIC PARAMETERS Drain-s ource breakdown voltage V (B R)DSS VGS = 0V, ID =-250µA -27 V Z ero gate voltage drain current ID SS VDS = -20V,VGS = 0V -1 µA Gate-bod y leakage current IGSS VGS = ±10V, VDS = 0 V ±20 uA Gate threshol d voltage (note 2) VGS( th) VDS =VGS, ID = Drain-s ource on-resistance(note 2) R DS (on) VGS = -4.5V, ID =-1 A 560 m Ω VGS = -2.5V, ID = -0.8A 780 m Ω VGS = -1.8V, ID = -0.5A 950 m Ω F orward tranconductance(note 2) gFS VDS = S Diod e forward voltage VSD I S= -0.5A, VGS = 0V -1.2 V DYN AMIC PARAMETERS(note 4) Input Cap acitance Ciss VDS = -16V,VGS =0 V,f =1MHz 113 170 pF Output Cap acitance Coss 15 25 pF Revers e Transfer Capacitance Crss 9 15 pF SWITCHING PA RAMETERS (note 4) T urn-on delay time (note 3) td( on) VDD= -4.5V,VGS= -10V, ID= -200mA,RGEN=1 9 ns T urn-on rise time (note 3) tr 5.8 ns T urn-off delay time (note 3) td( off) 32.7 ns T urn-off fall time (note 3) tf 20.3 ns 430 624 -25 LM8803P201 Rev

\\SLFDO&KDUDFWHULVWLFV -0.01 -0.1 -0 -1 -2 -3 -4 -5 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 300 400 500 600 700 800 900 1000 1100 1200 -1 -2 -3 -4 -5 300 400 500 600 700 800 900 1000 -0 -1 -2 -3 -4 -0.5 -1.0 -1.5 -2.0 -2.5 25 50 75 100 125 -0.2 -0.4 -0.6 -0.8 Ta=100℃ VSDIS — — Ta=25℃ SOURCE CURRENT IS (A) SOURCE TO DRAIN VOLTAGE VSD (V) VGS=- 4V,-5V VGS=-3V VGS=- 2.5V VGS=- 1.5V Ta=25℃ Puls ed O utput Characteristics VGS=-2V DRAIN CURRENT ID (A) DRAIN TO SOURCE VOLTAGE VDS (V) VGS=- 4.5V Ta=25℃ Puls ed O N-RESISTANCE RDS (ON) (m) DRAIN CURRENT ID (A) ID——RDS( ON) VGS=- 1.8V VGS=- 2.5V Ta=25℃ Ta=100℃ ID=-1A O N-RESISTANCE RDS (ON) (m) GATE TO SOURCE VOLTAGE VGS (V) VGS——RDS( ON) Puls ed Puls ed VDS=-3V Puls ed DRAIN CURRENT ID (A) GATE TO SOURCE VOLTAGE VGS (V) Transfer Characterist ics Ta=100℃Ta=25℃ ID=- 250uA T hreshold Voltage T HRESHOLD VOLTAGE VTH (V) JUNCTION TEM PERATURE TJ ( LM8803P201 Rev

N1006-3/g3/g51/g68/g70/g78/g68/g74/g72/g3/g50/g88/g87/g79/g76/g81/g72/g3/g39/g76/g80/g72/g81/g86/g76/g82/g81/g86/g3 LM8803P201 Sha nghai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86- 021 50477059 Rev