LM80H12D LEIDITECH

Document overview

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Technical content

Description

T he LM80H12D uses advanced trench technology and design to provide excellent RDS (ON) w ith low gate charge. It can be used in a wide variety of applications. General Features

  • V DS = 80V,ID = 120A RDS (ON) <6 mΩ @ VGS= 10V
  • High density cell design for ultra low Rdson
  • Fully characterized avalanche voltage and current
  • Good stability and uniformity with high E AS Excellent package for good heat dissipation
  • Special process technology for high ESD capability Application
  • Automotive appl ications
  • Hard switched and high frequency circuits
  • Uninterruptible power supply 100% UIS TESTED! 100% ∆Vds TESTED! Schematic dia gram Markin g and pin assignment T O-263-2L top view Packag e Marking and Ordering Information De vice Marking Device Device Package Reel Size Tape width Quantity - - Absolute Maximum Ratings (TC=25℃unless otherw ise noted) Parameter S ymbol Limit Unit Drain-S ource Voltage VDS 80 V Gate-Source Voltage VGS ±20 V Drain C urrent-Continuous ID 120 A Drain C urrent-Continuous(TC= A Pulse d Drain Current IDM 450 A Maximum Po wer Dissipation PD 220 W Derati ng factor 1.47 W Sing le pulse avalanche energy ( Note 5) E AS 140 0 mJ Operatin g Junction and Storage Temperature Range TJ,TST G -55 T o 175 ℃ LM80H120D Super Trench Power MOSFET N-Channel LM8 0H12D TO-263-2L - Rev : www.leiditech.com 01.06.2018 1/6

T hermal Resistance,Junction-to-Case( Note 2) RθJC 0.68 /W℃ Electrical Characteristics (TC=25℃unless otherw ise noted) Parameter Symbol Condition Min Typ Max Unit Off Ch aracteristics Drain-S ource Breakdown Voltage BVDS S V GS=0 V ID= 250μA 80 89 - V Z ero Gate Voltage Drain Current IDS S V DS= 80V,VGS=0V - - 1 μA Gate-Bod y Leakage Current IGSS V GS= ±20V,VDS=0V - - ±100 nA On Characteristics ( Note 3) Gate T hreshold Voltage VGS( th) V DS=VGS,ID= 250μA 2 3 4 V Drain-S ource On-State Resistance RDS (ON) V GS= 10V, ID= 40A - 4.9 6 m Ω F orward Transconductance gFS V DS= 25V,ID= 57A 90 - - S D ynamic Characteristics ( Note4) Input Cap acitance Clss - 6500 - PF Output Cap acitance Coss - 520 - PF Revers e Transfer Capacitance Crss VDS= 25V,VGS=0V, F=1.0MHz - 460 - PF S witching Characteristics (N ote 4) T urn-on Delay Time td( on) - 26 - nS T urn-on Rise Time tr - 24 - nS T urn-Off Delay Time td( off) - 91 - nS T urn-Off Fall Time tf VDD= 30V,ID=2A,RL=1 VGS= 10V,RG=2 .5Ω - 39 - nS T otal Gate Charge Qg - 163 nC Gate-Source C harge Qgs - 31 nC Gate-Drain Charge Qgd VDS= 30V,ID= 30A, VGS= 10V - 64 nC Drain -Source Diode Characteristics Diod e Forward Voltage (N ote 3) V SD V GS=0 V,IS= 40A - 1.2 V Diod e Forward Current ( Note 2) I S - - 120 A Rever se Recovery Time trr - 42 60 nS Reverse Recove ry Charge Qrr T J = 25°C, IF = 40A di/dt = 100A/μs( Note3) - 66 80 nC For ward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. R epetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 5. EAS condition：Tj=25℃,VDD=40V,VG=10V ,L=0.5mH,Rg=25Ω LM80H120D Rev : www.leiditech.com 01.06.2018 2/6

1）EAS tes t Circuit 2）Gate cha rge test Circuit 3）S witch Time Test Circuit LM80H120D Rev : www.leiditech.com 01.06.2018 3/6

Vds Drain-Source Voltage (V) Figure 7 Cap acitance vs Vds Vds Drain-Source V oltage (V) Figure 8 Safe Operation Area TJ-Junction T emperature(℃) Figure 9 BV DSS vs Junction Temperature TJ-Junction T emperature(℃) Figure

10 V GS

(th) vs Junction Temperature ID- Drain Cur rent (A) C Capacitance (pF) Square W ave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance r(t),Normalized Ef fective Transient Thermal Imped ance LM80H120D Rev : www.leiditech.com 01.06.2018 5/6

limeters Dimensions In Inches Sy mbol Min. Max. Min. Max. A 4.470 4.670 0.176 0.184 0.000 0.150 0.000 0.006 B 1.170 1.370 0.046 0.054 b 0.710 0.910 0.028 0.036 1.170 1.370 0.046 0.054 c 0.310 0.530 0.012 0.021 1.170 1.370 0.046 0.054 D 10.01 0 10.310 0.394 0.406 E 8.500 8.900 0.335 0.350 e 2.540 TYP. 0.100 TYP. 4.980 5.180 0.196 0.204 L 15.05 0 15.450 0.593 0.608 5.080 5.480 0.200 0.216 2.340 2.740 0.092 0.108 1.300 1.700 0.051 0.067 V 5.600 REF 0.220 REF LM80H120D Sha nghai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86- 021 50477059 Rev : www.leiditech.com 01.06.2018 6/6