LM6T20V3 LEIDITECH

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N Channel and P Channel MOSFET MOSFET Product Summary V DS (V) R DS(on) Ω I D (A) N Channel 0.043 @ V GS =4.5 V P-Channel -20 @ V GS V N-Channel Parameter Symbol Value Units Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±8 V Drain Current Continuous ID 3 A Pulsed ID 9 A Total Power Dissipation PD 1.25 W Operating Junction Temperature Range TJ -55 to 150 ℃ Thermal Characteristics Parameter Symbol Typ Max Units Maximum J unction to Ambient A t ≤10s θ JA 100

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Absolute maximum rating@25 The enhancement mode MOS is extremely density cell and low on-resistance SOT-23-6L top view LM6T20V3 Rev : 01.06.2014 1/ www.leiditech.com

Min. Typ. Max. Units OFF/ON CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID =250μA,VGS=0V 20 - V Zero Gate Voltage Drain Current IDSS VDS =20V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VDS =0V,VGS=±8V - - ±100 nA Gate Threshold Voltage VGS(th) VDS =VGS, I D =250μA 0.6 - 1.2 V Static Drain-Source On-Resistance 2 RDS(ON) VGS=4.5V, ID =2.8A - 0.043 0.060 Ω VGS=2.5V, ID =2.0A - 0.052 0.115 Ω VGS=1.8V, ID =2.0A - 0.080 0.130 Ω DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS =10V, f=1MHz - 450 pF Output Capacitance COSS - 70 pF Reverse Transfer Capacitance CRSS - 43 pF SWITCHING PARAMETERS Turn-On Delay Time td(on) VDS=10V, VGS =4.5V, RG=6Ω, ID =1A - 7 15 ns Turn-Off Delay Time td(off) - 16 60 ns Turn-On Rise Time Tr - 55 80 ns Turn-On Fall Time Tf - 20 25 ns Total Gate Charge Qg(10) VDS=10V, VGS =4.5V, ID =3.6A 5.2 10 nC Gate-Source Charge Qgs 0.65 nC Gate-Drain Charge Qgd 1.5 nC Drain-Source Diode Forward Voltage VSD VGS=0V,IS=1.0A 0.76 1.2 V Maximum Continuous rain -Source Diode Forward Current IS 1.6 A Rating Symbol Value Units Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±8 V Drain Current Continuous ID -2.8 A Pulsed ID -8 A Total Power Dissipation TA=25℃ PD 900 mW TA=125℃ PD 570 mW Absolute maximum rating@25 Electrical characteristics per line@25 ( unless otherwise specified) LM6T20V3 Rev : 01.06.2014 2/ www.leiditech.com

Fig 1. Output Characteristics Fig 2. Transfer Characteristics Parameter Symbol Conditions Min. Typ. Max. Units OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID =-250μA,VGS=0V -20 - - V Zero Gate Voltage Drain Current IDSS VDS =-20V,VGS=0V - - -1 μA Gate-Body Leakage Current IGSS VDS =0V,VGS=±10V - - ±100 nA Gate Threshold Voltage VGS(th) VDS =VGS, I D =-250μA -0.45 -0.9 V Static Drain-Source On-Resistance RDS(ON) Forward Tran conductance gFS VGS=5V, ID =50mA, TA=125℃ 6.5 S DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS =10V, f=1MHz - 360 pF Output Capacitance CDSS - 125 pF Reverse Transfer Capacitance CRSS - 50 pF SWITCHING PARAMETERS Turn-On Delay Time td(on) VDD=-6V, VGS =-4.5V, RL=6Ω, RG=6Ω, ID =-1A - 17 ns Turn-Off Delay Time td(off) - 35 ns Electrical characteri stics per line@25 ( unless otherwise specified) Typical Characteristics V GS 2.5V~5V 0.5V I D Drain Current (A) V DS Drain to Source Voltage (V) T C =125 C C C 0.0 0.5 1.0 1.5 2.0 2.5 V GS Gate to Source Voltage (V) I D Drain Current (A) 1.5 V LM6T20V3 Rev : 01.06.2014 3/ www.leiditech.com

Fig 3. On-Resistance vs. Drain Current Fig 4. Capacitance Characteristics Fig 5. Gate Charge Characteristics Fig 6. On -Resistance vs. Junction Temperature Fig 7. Source-Drain Diode Forward V oltage Fig 8. On -Resistance vs. Gate-to-Source V oltage V GS 2.5 V V GS 4.5 V 0.03 0.06 0.09 0.12 0.15 0.00 0 2 4 6 8 r DS(on) On Resistance ( Ω I D Drain Current A C iss C O ss C R ss 300 500 600 C – Capacitance (pF) V DS Drain to Source Voltage (V) 400 200 V GS ,Gate to Sou rce Voltage (V) Qg,Total Gate Charge nC 0.8 1.2 1.6 1.8 0.6 R DS(ON) ,On Resistance Normalized T J ,Junction Temperature 100 150 1.4 1.0 V GS 2.5 V I D =3.6A V GS 4.5 V I D =3.6A T C 150 C 0.1 0.001 0.0 0.2 0.4 0.6 0.8 1.0 I S ,Source Current(A) V SD Source to Drain Current (V) 0.04 0.12 0.16 0.20 r DS(ON) ,On Resistance( Ω V G S Drain to Source Voltage (V) 0.08 T C C I D 3.6A 1.2 LM6T20V3 Rev : 01.06.2014 4/ www.leiditech.com

Fig 9. Normalized Gate Threshold V oltage vs. Temperature Fig 10. Single Pulse Power P-Channel Fig 1. Output Characteristics Fig 2. Transfer Characteristics 0.1 0.0 0.2 0.3 -50 0 100 150 V GS(TH Normalized Gate Threshold Voltage(V) T J ,Temperature Power(W) Time sec 0.01 0.10 1.00 100.00 1000.00 I D =250 μ A T C Single Pulse 0.1 0.2 0.3 0.4 0.5 10.00 Typical Characteristics V GS =2.5V V GS V V GS 1.5 V 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 I D Drain Current (A) V DS Drain Source Voltage (V) T =25 C T =55 C T=125°C 0.0 0.5 1.0 1.5 2.0 2.5 3.0 V GS Gate to Source Voltage (V) I D Drain Current (A) LM6T20V3 Rev : 01.06.2014 / www.leiditech.com 5 6

Product dimension (SOT 6L) A B C D E F G H J K θ （6） LM6T20V3 Rev : 01.06.2014 / www.leiditech.com θ Dim Millimeters Inches MIN MAX MIN MAX A 2.820 3.020 0.111 0.119 B 1.500 1.700 0.059 0.067 C 2.650 2.950 0.104 0.116 D 0.950ÄBSCÅ 0.037ÄBSCÅ E 1.800 2.000 0.071 0.079 F 0.300 0.500 0.012 0.020 G 1.050 1.150 0.041 0.045 H 0.000 0.100 0.000 0.004 J 0.45 0.60 0.0180 0.0236 K 0.100 0.200 0.004 0.008 0° 8° 0° 8° Fig 3. On-Resistance vs. Drain Current Fig 4. Capacitance V GS =2.5V V GS 1.8 V V GS 4.5 V 0.1 0.2 0.3 0.4 0.5 0.6 0.0 r DS(on) On Resistance ( Ω I D Drain Current A C iss C O ss C R ss 200 400 600 800 C – Capacitance (pF) V DS Drain Source Voltage (V) Shanghai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86- 021 50477059