LM6602 LEIDITECH

Document overview

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Technical content

Description

The LM6602 uses advanced trench technology to provide excellent R DS(ON) , low gate charge. This device is suitable for use as a Battery protection or in other Switching application. General Features

  • N-Channel
  • V DS = 30V,I D = 3.5A R DS(ON) <58mΩ @ V GS =10V R DS(ON) < 95mΩ @ V GS =4.5V
  • P-Channel V DS = -30V,I D = -2.7A R DS(ON) < 100mΩ @ V GS =-10V R DS(ON) < 150mΩ @ V GS =-4.5V
  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage Schematic diagram Pin Assignment SOT23-6L top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 6602N LM6602 SOT23-6L Ø180mm 8mm 3000units Absolute Maximum Ratings (T A =25℃unless otherwise noted) Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage V DS 30 -30 V Gate-Source Voltage V GS ±20 ±20 V T A =25℃ 3.5 -2.7 Continuous Drain Current T A =70℃ I D 3 -2.1 A Pulsed Drain Current (Note 1) I DM 20 -15 A Maximum Power Dissipation T A =25℃ P D 1.2 W Operating Junction and Storage Temperature Range T J STG -55 To 150 -55 To 150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note2) R θJA N-Ch 104 /W ℃ Thermal Resistance,Junction-to-Ambient (Note2) R θJA P-Ch 104 /W ℃ N-channel P-channel LM6602 Enhancement Mode Power MOSFET N and P-Channel Rev : www.leiditech.com 01.06.2018

A =25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V I D =250μA 30 33 - V Zero Gate Voltage Drain Current I DSS V DS =30V,V GS =0V - - 1 μA Gate-Body Leakage Current I GSS V GS =±20V,V DS =0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS GS D =250μA 1.2 1.5 2.2 V V GS =10V, I D =3.5A - 36 58 m Ω Drain-Source On-State Resistance R DS(ON) V GS =4.5V, I D =2A - 60 95 m Ω Forward Transconductance g FS V DS =5V,I D =3.1A - 4 - S Dynamic Characteristics (Note4) Input Capacitance C lss - 210 - PF Output Capacitance C oss - 35 - PF Reverse Transfer Capacitance C rss V DS =15V,V GS =0V, F=1.0MHz - 23 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 4.5 - nS Turn-on Rise Time t r - 1.5 - nS Turn-Off Delay Time t d(off) - 18.5 - nS Turn-Off Fall Time t f V DD =15V, R L =3Ω V GS =10V,R GEN =6Ω - 15.5 - nS Total Gate Charge Q g - 5 - nC Gate-Source Charge Q gs - 0.55 - nC Gate-Drain Charge Q gd V DS =15V,I D =3.5A, V GS =10V - 1 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS =0V,I S =3.5A - 0.8 1.2 V Diode Forward Current (Note 2) I S - - 3.5 A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production Rev : www.leiditech.com 01.06.2018 2/10 LM6602

A =25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V I D Zero Gate Voltage Drain Current I DSS V DS =-30V,V GS =0V - - -1 μA Gate-Body Leakage Current I GSS V GS =±20V,V DS =0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS GS D V GS =-10V, I D =-2.7A - 69 100 m Ω Drain-Source On-State Resistance R DS(ON) V GS =-4.5V, I D =-2A - 110 150 m Ω Forward Transconductance g FS V DS =-10V,I D =-2.7A 2 - S Dynamic Characteristics (Note4) Input Capacitance C lss - 199 - PF Output Capacitance C oss - 47 - PF Reverse Transfer Capacitance C rss V DS =-15V,V GS =0V, F=1.0MHz - 28 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 8 - nS Turn-on Rise Time t r - 5 - nS Turn-Off Delay Time t d(off) - 12 - nS Turn-Off Fall Time t f V DD =-15V,R L =15Ω V GS =-10V,R GEN =6Ω - 4 - nS Total Gate Charge Q g - 5 - nC Gate-Source Charge Q gs - 0.7 - nC Gate-Drain Charge Q gd V DS =-15V,I D =-2.7A,V GS =-10V - 1.1 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS =0V,I S =-2.7A - - -1.2 V Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production Rev : www.leiditech.com 01.06.2018 3/10 LM6602

Square Wave Pluse Duration(sec) Figure 13 Normalized Maximum Transient Thermal Impedance r(t),Normalized Effective Transient Thermal Im p edance Rev : www.leiditech.com 01.06.2018 6/10 LM6602

Square Wave Pluse Duration(sec) Figure 13 Normalized Maximum Transient Thermal Impedance r(t),Normalized Effective Transient Thermal Im p edance Rev : www.leiditech.com 01.06.2018 9/10 LM6602

Shanghai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86- 021 50477059 Rev : www.leiditech.com 01.06.2018 10/10 LM6602