LM6403 LEIDITECH

Document overview

  • Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

Features

ID (at VGS=-10V) RDS(ON) (atVGS=-10V) RDS(ON) (atVGS=-4.5V) -30V -6A 30mΩ(Max) 45mΩ(Max) Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum Units Drain-SourceVoltage VDS -30 V Gate-SourceVoltage VGS ±20 V DrainCurrent-Continuous TC=25°C ID -6.0 A TC=100°C ID -3.6 A DrainCurrent – Pulsed IDM -24 A MaximumPower Dissipation PD 1.56 W JunctionandStorage TemperatureRange TJ,TSTG -55To 150 ℃ Thermal Characteristics Parameter Symbol Typ Max Unit ThermalResistancejunction-case RθJc 1.1 ℃ /W ThermalResistanceunction-to-Ambient RθJA 60 ℃ /W SOT23-6 S D G S D GD D D Enhancement Mode Power MOSFET P-Channel LM6403 Rev : www.leiditech.com 01.06.2018 1/5

Electrical Characteristics (TJ=25℃ unless otherwise noted) Symbol Parameter Condition Min Typ Max Unit STATIC PARAMETERS BVDSS Drain-SourceBreakdown Voltage VGS=0VID=-250μA -30 V IDSS ZeroGate VoltageDrainCurrent VDS=-30V,VGS=0V 1 μA IGSS Gate-BodyLeakageCurrent VGS=±20V,VDS=0V ±100 nA VGS(th) Gate ThresholdVoltage VDS=VGS,ID=-250μA -0.5 -1.0 -1.5 V RDS(ON) Drain-Source On-State Resistance VGS=-10V, ID=-4.0A 25 30 mΩ VGS=-4.5V, ID=-2.0A 35 45 mΩ DYNAMIC PARAMETERS Clss Input Capacitance VDS=-15V,VGS=0V, F=1.0MHz 757 pF Coss OutputCapacitance 122 pF Crss ReverseTransferCapacitance 88 pF SWITCHING PARAMETERS td(on) Turn-onDelayTime VDS=-15V,ID=-1A, VGS=-10V, RG=3Ω 4.6 nS tr Turn-onRiseTime 14 nS td(off) Turn-Off DelayTime 34 nS tf Turn-Off FallTime 18 nS Qg Total GateCharge VDS=-15V,ID=-5A, VGS=-4.5V 8 nC Qgs Gate-SourceCharge 3.3 nC Qgd Gate-DrainCharge 2.3 nC VSD DiodeForward Voltage VGS=0V,ISD=-1A 0.72 1.4 V Note： 1. RepetitiveRating:Pulsedwidth limitedbymaximumjunctiontemperature. 2. Thedata testedbypulsed,pulsewidth ≦ 300us,dutycycle ≦ 2%. 3. Essentiallyindependentof operatingtemperature. LM6403 Rev : www.leiditech.com 01.06.2018 2/5

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Normalized Gate Threshold V oltage (V) TJ , Junction Temperature (℃) Fig.3 Normaliz ed Vth vs. TJ GS Gate to Source V oltage (V) Qg , Gate Charge (nC) Fig.4 Gate Charge Waveform Normalized Thermal Response (R θJA Square Wave Pulse Duration (s) Fig.5 Normalized Transient Impedance D Continuous Drain Current (A) -VDS , Drain to Source Voltage (V) Fig.6 Maximum Safe Operation Area D , Continuous Drain Current (A) TC , Case Temperature (℃) Fig.1 Continuous Drain Current vs. TC Normalized On Resistance (m) TJ , Junction Temperature (℃) Fig.2 Normaliz ed RDSON vs. TJ LM6403 Rev : www.leiditech.com 01.06.2018 3/5

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Fig.7 Switching Time Waveform Fig.8 Gate Charge Waveform LM6403 Rev : www.leiditech.com 01.06.2018 4/5

Symbol Dimensions In Millimeters Dimensions In Inches MAX MIN MAX MIN A 1.450 - 0.057 - A1 0.100 0.000 0.004 0.000 A2 1.300 1.050 0.051 0.041 b 0.500 0.300 0.020 0.012 c 0.200 0.100 0.008 0.004 D 3.100 2.700 0.122 0.106 E 1.800 1.400 0.071 0.055 E1 3.000 2.600 0.1 18 0.102 e 0.95BSC 0.037BSC e1 2.000 1.800 0.079 0.071 L1 0.600 0.300 0.024 0.012 θ 10° 0° 10° 0° SOT23-6 PACKAGE INFORMATION LM6403 Shanghai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86- 021 50477059 Rev : www.leiditech.com 01.06.2018 5/5