LM6401 LEIDITECH

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Technical content

(Ta=25C Maximum ratings SOT-23 Plastic-Encapsulate MOSFETS P-Channel 12-V(D-S) MOSFET SO T -23 FEATURE 1. GATE TrenchFET Power MOSFET 2. SOURCE 3. DRAIN

APPLICATIONS

z Load Switch for Portable Devices z DC/DC Converter MARKING:1F Parameter Symbol Value Unit Drain-Source Voltage V DS -12 Gate-Source Voltage V GS V Continuous Drain Current I D -5.0 Pulsed Drain Current I DM -10 Continuous Source-Drain Diode Current I S -0.72 A Maximum Power Dissipation P D 0.35 W Thermal Resistance from Junction to Ambient(t 5s) R JA 357 ℃/W Junction Temperature T J 150 Storage Temperature T stg -55 ~+150 ℃ θ Pb-Free package is available Smail Package Outine Surface Mount Device unless otherwise noted) z z z z Pb Lead-free LM6401 Rev : www.leiditech.com 01.06.2018 1/2

Electrical characteristics (T a =25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Units Static Drain-source breakdown voltage V(BR) DSS V GS = 0V, I D =-250µA -12 V Gate-source threshold voltage V GS(th) V DS GS , I D =-250µA -0.4 -1 Gate-source leakage I GSS V DS =0V, V GS =±8V ±100 nA Zero gate voltage drain current I DSS V DS =-20V, V GS =0V -1 µA Drain-source on-state resistance R DS(on) V GS =-4.5V, I D =-5.0A 0.029 0.04 Ω V GS =-2.5V, I D =-4.0A 0.04 0.06 Forward transconductance a g fs V DS =-5V, I D =-2.8A 6.5 S Dynamic b Input capacitance C iss V DS =-10V,V GS =0V,f =1MHz 405 pFOutput capacitance C oss Reverse transfer capacitance C rss Total gate charge Q g V DS =-10V,V GS =-4.5V,I D =-5A 5.5 10 nC V DS =-10V,V GS =-2.5V,I D =-5A 3.3 6 Gate-source charge Q gs 0.7 Gate-drain charge Q gd 1.3 Gate resistance R g f =1MHz 6.0 Ω Turn-on delay time t d(on) V DD =-10V, R L =10Ω, I D =-1A, V GEN =-4.5V,Rg=1Ω 11 20 ns Rise time t r 35 60 Turn-off delay time t d(off) 30 50 Fall time t f 10 20 Drain-source body diode characteristics Continuous source-drain diode current I S T C =25℃ -1.3 A Pulse diode forward current I SM -10 Body diode voltage V SD I S =-0.7A -0.8 -1.2 V Notes : a.Pulse Test : Pulse Width < 300µs, Duty Cycle ≤2%. b.Guaranteed by design, not subject to production testing. a a -18V LM6401 Shanghai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86- 021 50477059 Rev : www.leiditech.com 01.06.2018 2/2