LM6015P LEIDITECH
Document overview
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Technical content
- FEATURES
- Low Profile DFN 2.0x2.0x0.62 mm for Board Space Saving
- Ultra Low RDS(on) 2.APPLICATIONS 3. ORDERING INFORMATION 4. MAXIMUM RATINGS(Ta = 25º C unless otherwise stated) V V A A ºC PD 1.7 3.8 TJ , TSTG W ºC ID -6 IDM 16 TL 260 Parameter Symbol Limits Unit +150 Drain−to−Source Voltage VDSS -18 Gate−to−Source Voltage VGS ±8 −55 ~ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) This is a Pb-Free Device Device Marking Shipping LM6015P 32 3000/Tape&Reel We declare that the material of product are Halogen Free and compliance with RoHS requirements. Battery Switch High Side Load Switch 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces) Operating Junction and Storage Power Dissipation (Note 1) Pulsed Drain Current (tp = 10 µ s) Drain Current (Note 1)Steady State Temperature Range t < 7 s Steady State LCE P-Channel Enhancement Mode Power MOSFET LM6015P Rev : www.leiditech.com 01.06.2018 1/3
- ELECTRICAL CHARACTERISTICS Min -18 -0.4 2. Pulse Test: pulse width ≤ 300 µ s, duty cycle ≤ 2% 3. Switching characteristics are independent of operating junction temperatures NMOSFET Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 µ A V VGS = -4.5 V, VDD = -15 V; ID = -4A, RG = 1Ω ns mV/° C µA µA mΩ Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ± 5 V ±5 Gate Threshold Voltage (Note2) VGS(TH) VGS = V DS , ID = 250 µ A Parameter Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS /TJ 10 Zero Gate Voltage Drain Curren Symbol Test Condition Typ Max Unit IDSS VGS = 0 V, VDS = -20 V TJ = 25° C V Negative Threshold Temperature Coefficient (Note2) VGS(TH) /TJ 3.0 mV/° C VGS = -4.5 V, ID = -5 A 22.5 29.5 Drain−to−Source On Resistance (Note2) RDS(on) VGS = -2.5 V, ID = -4 A VGS = -1.8 V, ID = -2 A VGS = -1.5 V, ID = -1 A Forward Transconductance (Note2) gFS VDS = -5 V, ID = -3A 40 S Input Capacitance CISS VGS = 0 V, f = 1 MHz, VDS = -15 V 2240 pFOutput Capacitance COSS 240 Reverse Transfer Capacitance CRSS 210 Total Gate Charge QG(TOT) VGS = -4.5 V, VDS = -15 V; ID = -4A nCThreshold Gate Charge QG(TH) 1.0 Gate−to−Source Charge QGS 2.9 Gate−to−Drain Charge QGD 8.8 Rise Time (Note3) tr 15 Turn−Off Delay Time (Note3) td(OFF) 150 V Fall Time (Note3) tf 88 0.5 1Forward Diode Voltage VSD VGS = 0 V, IS = -1A TJ = 25° C TJ = 125° C 0.63 Turn−On Delay Time (Note3) td(ON) 8.6 0.7 LM6015P Rev : www.leiditech.com 01.06.2018 2/3
7.OUTLINE AND DIMENSIONS 8.SOLDERING FOOTPRINT L1 0.60 0.65 0.65 D1 0.90 0.95 1.00 E1 1.10 1.15 1.20 E 1.95 2.00 2.05 e 0.65TYP. L 0.23 0.28 0.33 DFN2020-6S DIM MIN NOR MAX A 0.45 0.5 0.55 A1 0.01 0.03 0.05 b 0.25 0.30 0.35 D 1.95 2.00 2.05 Y4 2.39 A3 0.152REF All Dimensions in mm DFN2020-6S Dim (mm) X 0.40 X1 0.95 X2 1.70 e 0.65 Y 0.43 Y1 0.75 Y2 1.15 Y3 1.54 LM6015P Shanghai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86- 021 50477059 Rev : www.leiditech.com 01.06.2018 3/3