LM4012 LEIDITECH
Document overview
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Technical content
Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=40V,ID=12A,RDS(ON)<12mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units V DS Drain Source Voltage V V GS Gate Source Voltage V I D Drain Current Continuous (T C =25 A Drain Current Continuous (T C =100 8.5 I DM Drain Current Pulsed P D Power Dissipation (T C =25 W Power Dissipation Derate above 25 T J , T STG Operating and Storage Junction Temperature Range 55 to +150 Thermal Characteristics： Symbol Parameter Max Units R Ɵ JC Thermal Resistance,Junction to Case R Ɵ JA Thermal Resistance,Junction to Ambient 41.7 D D D D S S LM4012 Enhancement Mode Power MOSFET N-Channel Rev : www.leiditech.com 01.06.2018 1/6
Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BV DSS Drain Sourtce Breakdown Voltage V GS =0V,I D =250 μ A --- --- V I DSS Drain Source Leakage Current V DS 0V , V GS =0V --- --- uA I GSS Gate Source Leakage Current VGS=±20V, VDS=0V --- --- 100 nA On Characteristics V GS(th) GATE Source Threshold Voltage VGS=VDS, ID=250μA 1 1.6 2.5 V R DS(ON) Static Drain Source On Resistance VGS=10V,ID=10A --- m Ω VGS=4.5V,ID=8A --- 12. G FS Forward Transconductance VDS=5V, ID=10A --- --- S Dynamic Characteristics C iss Input Capacitance V DS V, V GS =0V, f=1MHz --- 1780 --- pF C oss Output Capacitance --- 209 --- C rss Reverse Transfer Capacitance --- 160 --- Switching Characteristics t d(on) Turn On Delay Time V DS R GEN Ω V GS =10V --- 6.4 --- ns t r Rise Time --- 17.2 --- ns t d(off) Turn Off Delay Time --- 29.6 --- ns t f Fall Time --- 16.8 --- ns Q g Total Gate Charge V GS V, V DS I D A --- --- nC Q gs Gate Source Charge --- 4.2 --- nC Q gd Gate Drain Miller Charge --- 9.5 --- nC Drain Source Diode Characteristics V SD Source Drain Diode Forward Voltage V GS =0V,I S A T J =25 --- --- V LM4012 Rev : www.leiditech.com 01.06.2018 2/6
Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance r(t),Normalized Effective Transient Thermal Im p edance LM4012 Rev : www.leiditech.com 01.06.2018 5/6
Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 1.350 1.750 0.053 0.068 A1 0.100 0.250 0.004 0.009 A2 1.300 1.500 0.052 0.059 A3 0.600 0.700 0.024 0.027 b 0.390 0.480 0.016 0.018 c 0.210 0.260 0.009 0.010 D 4.700 5.100 0.186 0.200 E 5.800 6.200 0.229 0.244 E1 3.700 4.100 0.146 0.161 e 1.270(BSC) 0.050(BSC) h 0.250 0.500 0.010 0.019 L 0.500 0.800 0.019 0.031 L1 1.050(BSC) 0.041(BSC) θ °0 °8 °0 ° 8 SOP8 PACKAGE INFORMATION Shanghai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86- 021 50477059 Rev : www.leiditech.com 01.06.2018 6/6