LM3019 LEIDITECH

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V(BR)DSS RDS(on)MAX ID SOT-523 G A T E S O U R C E D R A I N F E A T U R E H i g h d e n s i t y c e l l d e s i g n f o r l o w R D S O N V o l t a g e c o n t r o l l e d s m a l l s i g n a l s w i t c h R u g g e d a n d r e l i a b l e H i g h s a t u r a t i o n c u r r e n t c a p a b i l i t y A P P L I C A T I O N L o a d S w i t c h f o r P o r t a b l e D e v i c e s D C D C C o n v e r t e r EquivalentCircuit M A R K I N G G a t e S o u r c e (Top View) MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VDS Drain-Sourcevoltage V VGS Gate-Sourcevoltage 20 V ID DrainCurrent mA PD Power Dissipation 150 mW RθJA ThermalResistancefromJunctionto Ambient 833 ℃/W TJ JunctionTemperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ 200mA 3Ω@10V 4Ω@5V 50 V TD 200 N-Channel Enhancement Mode Power MOSFET LM3019 Rev 2.0 : www.leiditech.com 12.01.2019 1/3

MOSFET ELECTRICAL CHARACTERISTICS Ta=25℃ unless otherwise specified Parameter Symbol Test conditions Min Typ Max Unit Drain-SourceBreakdownVoltage V(BR)DSS VGS=0 V,ID=250µA V Gate-ThresholdVoltage Vth(GS) VDS=VGS, ID=250 µA Gate-bodyLeakage lGSS VDS=0V, VGS=±20V Zero GateVoltageDrainCurrent IDSS VDS=60V,V GS=0 V On-stateDrain Current ID(ON) VGS=10 V,VDS=7 V mA Drain-SourceOn-Resistance RDS(on) VGS=10 V,ID=500mA 3 Ω VGS=5 V,ID=50mA 4 Forward Transconductance gfs VDS=10V,I D=200mA 80 ms Drain-source on-voltage VDS(on) VGS=10V, ID=500mA 3.75 V VGS=5V,ID=50mA 0.375 V DiodeForward Voltage VSD IS=115mA,VGS=0V 0.55 1.2 V InputCapacitance Ciss VDS=25V,VGS=0V,f=1MHz pFOutput Capacitance Coss 25 Reverse Transfer Capacitance Crss 5 SWITCHING TIME Turn-onTime td(on) VDD=25V, RL=50Ω ID=500mA,VGEN=10V RG=25 Ω ns Turn-offTime td(off) 40 200 ±10 ±30 µA µA 1.5 1.0 0.7 Rev 2.0 : www.leiditech.com 12.01.2019 2/3 LM3019

T y p i c a l S o l d e r i n g P a t t e r n N O T E S A b o v e p a c k a g e o u t l i n e c o n f o r m s t o J E I T A E A I J E D A S C A D i m e n s i o n s a r e e x c l u s i v e o f B u r r s M o l d F l a s h T i e B a r e x t r u s i o n s DIM MILLIMETERS INCHES MIN MAX MIN MAX A 0.70 0.90 0.028 0.035 A1 0.00 0.10 0.000 0.004 A2 0.70 0.80 0.028 0.031 b1 0.15 0.25 0.006 0.010 b2 0.25 0.35 0.010 0.014 c 0.10 0.20 0.004 0.008 D 1.50 1.70 0.059 0.067 E 0.70 0.90 0.028 0.035 E1 1.45 1.75 0.057 0.069 e 0.50 TYP. 0.020 TYP. e1 0.90 1.10 0.035 0.043 L 0.40 REF. 0.016 REF. L1 0.10 0.30 0.004 0.012 θ O O O O Shanghai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86- 021 50477059 Rev 2.0 : www.leiditech.com 12.01.2019 3/3 LM3019