LM2N60CP LEIDITECH

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■ Ordering Information P/N PACKAGE PACKING CODE UNIT WEIGHT(g) MINIIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE LM2N60CP TO-252 F1 Approximate 0.4 2500 5000 25000 Feature:  Low Crss  Low Gate Charge  Fast Switching  Improved ESD Capability  Improved dv/dt Capability  100% Avalanche Energy Test Mechanical Data:  Package： MOS Molding compound meets UL 94 V-0 flammability rating, RoHS-compliant  Terminal：Tin plated leads， Solderable per J-STD-002 and JESD22-B102  Polarity： As marked on body LM2N60CP N-Channel Enhancement Mode Power MOSFET Rev : www.leiditech.com 01.06.2018

■ Maximum Ratings (Ta=25℃ Unless otherwise specified ) Parameter Symbol Value Unit Drain-Source Voltage V DSS 600 V Continues Drain Current I D Tc=25℃ 2* A Tc=100℃ 1.3* Plused Drain Current (note 1) I DM 8 A Gate-to-Source Voltage V GS ±30 V Single Pulsed Avalanche Energy (note 2) E AS 120 mJ Avalanche Current (note 1) I AR 2.0 A Repetitive Avalanche Energy (note 1) E AR 10 mJ Peak Diode Recovery (note 3) dv/dt 4.5 V/ns Power Dissipation P D Tc=25℃ TO-220AB 54 W ITO-220AB 23 TO-251/TO-252 44 Power Dissipation Derating Factor P D(DF) Above 25℃ TO-220AB 0.8 W/℃ ITO-220AB 0.26 TO-251/TO-252 0.39 Operating and Storage Temperature Range T J STG 150 ，-55～+150 ℃ Maximum Temperature for Soldering T L 300 ℃ ■Electrical Characteristics（Ta=25℃ Unless otherwise specified ） Off-Characteristics Parameter Symbol Tests Conditions Min Type Max Unit Drain-Source Breakdown Voltage BV DSS I D =250μA, V GS =0V 600 - - V Breakdown Voltage Temperature Coefficient BV DSS J I D =250μA, referenced to 25℃ - 0.7 - V/ ℃ Zero Gate Voltage Drain Current I DSS V DS =600V,V GS =0V, T C =25℃ - - 1 μA V DS =480V, T C =125℃ - - 10 Gate-body leakage current, forward I GSSF V DS =0V, V GS =30V - - 100 nA Gate-body leakage current, reverse I GSSR V DS =0V, V GS = -30V - - -100 nA LM2N60CP Rev : www.leiditech.com 01.06.2018

GS(th) V DS = V GS , I D =250μA 2.0 - 4.0 V Static Drain-Source On-Resistance R DS(ON) V GS =10V , I D =1.0A - 3.5 4.5 Ω Forward Transconductance g fs V DS = 40V, I D =1.0A（note4） - 2.0 - S Dynamic Characteristics Parameter Symbol Tests Conditions Min Type Max Unit Input capacitance C iss V DS =25V, V GS =0V, f=1.0MHz - 380 480 pF Output capacitance C oss - 40 52 pF Reverse transfer capacitance C rss - 6 8 pF Switching Characteristics Parameter Symbol Tests Conditions Min Type Max Unit Turn-On delay time t d (on) V DD =300V, I D =2A, R G =25Ω （note 4，5） - 16 40 ns Turn-On rise time t r - 50 110 ns Turn-Off delay time t d (off) - 40 80 ns Turn-Off Fall time t f - 45 95 ns Total Gate Charge Qg V DS =480V , I D =2A, V GS =10V （note 4，5） - 10 14 nC Gate-Source charge Qgs - 2.1 - nC Gate-Drain charge Qgd - 5.5 - nC Drain-Source Diode Characteristics and Maximum Ratings Parameter Symbol Tests Conditions Min Type Max Unit Maximum Continuous Drain-Source Diode Forward Current I S - - 2 A Maximum Pulsed Drain-Source Diode Forward Current I SM - - 8 A Drain-Source Diode Forward Voltage V SD V GS =0V, I S =2A - - 1.4 V Reverse recovery time t rr V GS =0V, I S =2A dI F /dt=100A/μs (note 4) - 260 - ns Reverse recovery charge Q rr - 1.2 - μC LM2N60CP Rev : www.leiditech.com 01.06.2018

■ Thermal Characteristics （Ta=25℃ Unless otherwise specified ） Parameter Symbol Max Unit Thermal Resistance，Junction to Case Rth(j-c) TO-220AB 2.32 /W℃ ITO-220AB 5.5 TO-251/TO-252 2.87 Thermal Resistance，Junction to Ambient Rth(j-A) TO-220AB 62.5 /W℃ ITO-220AB 62.5 TO-251/TO-252 110 * Drain current limited by maximum junction temperature Notes: 1：Pulse width limited by maximum junction temperature 2：L=55mH, I AS =2A, V DD =50V, R G =25Ω, Starting T J =25℃ 3：I SD ≤2A, di/dt ≤300A/μs, V DD ≤BV DSS , Starting T J =25℃ 4：Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2％ 5：Essentially independent of operating temperature ■ Characteristics (Typical) F i g . 1 O n - S t a t e C h a r a c t e r i s t i c s F i g . 2 T r a n s f e r C h a r a c t e r i s t i c s LM2N60CP Rev : www.leiditech.com 01.06.2018

Fig. 3 Breakdown Voltage Variation vs Temperature Fig. 4 On-Resistance Variation vs Temperature Fig. 5 Capacitance Characteristics Fig. 6 Gate Charge Characteristics Fig. 7 Maximum Safe Operating Area Fig. 8 Maximum Drain Current vs Case Temperature LM2N60CP Rev : www.leiditech.com 01.06.2018

Fig. 9 Transient Thermal Response Curve(TO-251/TO-252) Fig. 10 Transient Thermal Response Curve(ITO-220) Fig. 11 Transient Thermal Response Curve(TO-220AB) LM2N60CP Rev : www.leiditech.com 01.06.2018

Symbol Min Max Symbol Min Max A 6.40 6.60 D 2.90 3.10 A1 5.20 5.40 D1 0.45 0.55 A2 4.40 4.60 D2 0.45 0.55 A3 4.40 4.60 e 2.30 A4 0.00 0.15 E 2.20 2.40 A5 4.65 4.95 F 0.49 0.59 B 6.00 6.20 G 1.70 B1 1.57 1.77 L 1.40 1.60 C 0.90 0.96 θ(度) 0.00 10.00 I 0.60 0.90 H 0.49 0.52 LM2N60CP Shanghai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86- 021 50477059 Rev : www.leiditech.com 01.06.2018