LM2D10P03 LEIDITECH
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 5
Technical content
- FEATURES
- VDS = -30V RDS(ON)≤24 ,VGS@-10V,IDS@-7.3A RDS(ON)≤37mΩ,VGS@-4.5V,IDS@-5.9A
- Low RDS(ON) trench technology.
- Low thermal impedance.
- Fast switching speed.
- We declare that the material of product compliance with RoHS requirements and Halogen Free.
- S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. 2. APPLICATIONS
- Load Switches
- DC/DC Conversion
- Motor Drives 3. DEVICE MARKING AND ORDERING INFORMATION 4. MAXIMUM RATINGS(Ta = 25º C) 5. THERMAL CHARACTERISTICS Continuous Source Current (Diode Conduction)(Note 1) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(Note 1) Pulsed Drain Current(Note 2) Parameter Parameter Symbol Operating Junction and Storage Temperature Range Maximum Power Dissipation(Note 1) TA = 25℃ TA = 70℃ Note: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. Max Unit Maximum Junction-to-Ambient (Note 1) t≤10S RθJA 40 º C/WSteady State 90 IS 3.8 PD W A A -9.4ID IDM -40 3.1 TJ , Tstg -50~+150 Device VGS ± 20 Symbol Limits -30 Unit VDS Marking Shipping LM2D10P03 3B1 4000/Tape&Reel V mΩ LM2D10P03 N and P-Channel Enhancement Mode Power MOSFET Rev : www.leiditech.com 01.06.2018 1/5
- ELECTRICAL CHARACTERISTICS (Ta= 25ºC) Characteristic Drain-Source Breakdown Voltage (VGS =0V, ID =-250μA ) Gate Threshold Voltage (VDS =VGS , ID =-250μA ) Gate Leakage Current (VDS =0V, VGS =± 20V ) Zero Gate Voltage Drain Current (VDS =-24V, VGS =0V ) On-State Drain Current(Note 3) (VDS = -5 V, VGS = -10 V) Drain-Source On-Resistance (VGS =-10V, ID = -7.3A ) Drain-Source On-Resistance (VGS =-4.5V, ID = -5.9A ) Diode Forward Voltage(Note 3) (IS =-1A, VGS =0V) Forward Transconductance(Note 3) (VDS = -15 V, ID = -7.3 A) S ID(on) A-14 - - V mΩ 5 - 55 - 21 - nC pF ns tr td(off) Note: 3. Pulse test; pulse width≤ 300us, duty cycle≤ 2%. 4. Guaranteed by design, not subject to production testing. 1539 - ± 100 8.4 - -1.5- Coss td(on) 4.7 163 - 151 - gfs - 8 - tf -30 Qgd Ciss - (VDS = -15 V, RL =2.1 Ω,ID = -7.3 A,VGEN = -10 V,RGEN = 6 Ω) Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Typ. Max. V(BR)DSS IGSS VSD Crss Static DYNAMIC(Note 4) Unit nA µA VGS(th) -3 V V Symbol Min. Qg Qgs RDS(ON) (Note 3) IDSS (VDS = -15 V, VGS = -4.5 V, ID = -7.3 A) (VDS = -15 V, VGS = 0 V, f = 1 MHz) Rev : www.leiditech.com 01.06.2018 2/5 LM2D10P03
7.ELECTRICAL CHARACTERISTICS CURVES 0.001 0.01 0.1 IS (A) VSD (V) -55℃ 150℃ 25℃ 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 -50 -25 0 25 50 75 100 125 150 RDSon (Ω) Tj,Temperature(℃) VGS=4.5V,ID=5.9A VGS=10V,ID=7.3A 0 2 4 6 8 10 ID,Drain Current (A) VDS,Drain to Source Voltage (V) VGS=2.2V VGS=2.4V VGS=2.6V VGS=2.8V VGS=3V, 4V, 5V ID,Drain Current (A) VGS,Gate to Source Voltage (V) VDS=10V -55℃ 150℃ 25℃ ID vs.VDS ID vs.VGS IS vs.VSD RDSON vs.TJ Rev : www.leiditech.com 01.06.2018 3/5 LM2D10P03
7.ELECTRICAL CHARACTERISTICS CURVES(Con.) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 2 4 6 8 10 RDSon (Ω) ID (A) VGS=3V VGS=4V VGS=5V 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGSth,THreshold Votlage(V) Tj,Temperature (℃) ID=250uA RDSon vs.ID VGSth vs.Tj Rev : www.leiditech.com 01.06.2018 4/5 LM2D10P03
8.OUTLINE AND DIMENSIONS 9.SOLDERING FOOTPRINT X 0.40 X1 0.95 Y3 1.54 Y4 2.39 X2 1.70 e 0.65 Y 0.43 Y1 0.75 Y2 1.15 E1 1.10 1.15 1.20 A3 0.152REF All Dimensions in mm DFN2020-6S Dim (mm) L 0.23 0.28 0.33 L1 0.60 0.65 0.65 D1 0.90 0.95 1.00 D 1.95 2.00 2.05 E 1.95 2.00 2.05 e 0.65TYP. A 0.60 0.65 0.70 A1 0.01 0.03 0.05 b 0.25 0.30 0.35 DFN2020-6S DIM MIN NOR MAX Shanghai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86- 021 50477059 Rev : www.leiditech.com 01.06.2018 5/5 LM2D10P03