LM2832

LM2832 High Frequency 2.0A Load - Step-Down DC-DC Regulator datasheet (Rev. A)

Document overview

• Manufacturer or author: Texas Instruments, Incorporated [SNVS455,A]
• PDF pages: 36

Technical content

VIN = 5V C2 C3 VO = 3.3V @ 2.0A LM2832 LM2832 www.ti.com SNVS455A –AUGUST 2006–REVISED APRIL 2013 LM2832HighFrequency2.0ALoad-Step-DownDC-DCRegulator Check forSamples: LM2832 1FEATURES DESCRIPTION The LM2832 regulatorisa monolithic,highfrequency, 2• InputVoltageRange of3.0Vto5.5V PWM step-downDC/DC converterina 6 Pin WSON• Output VoltageRange of0.6Vto4.5V and a 8 Pin eMSOP-PowerPAD package.Itprovides

• 2.0A Output Current allthe activefunctionsto provide localDC/DC conversionwithfasttransientresponseand accurate• High SwitchingFrequencies regulationinthesmallestpossiblePCB area.With a– 1.6MHz (LM2832X) minimum of externalcomponents, the LM2832 is – 0.55MHz (LM2832Y) easy to use.The abilityto drive2.0A loadswithan internal150 m Ω PMOS switchusingstate-of-the-art– 3.0MHz (LM2832Z) 0.5µm BiCMOS technologyresultsinthebestpower• 150m Ω PMOS Switch densityavailable.The world-classcontrolcircuitry• 0.6V,2% InternalVoltageReference allowson-timesas low as 30ns, thus supporting exceptionallyhigh frequencyconversionover the• InternalSoft-Start
• Over VoltageProtection allowingthe use of extremelysmallsurfacemount inductorsand chip capacitors.Even though the operatingfrequencyishigh,efficienciesup to 93%APPLICATIONS are easy to achieve.Externalshutdown isincluded,• Local5V toVcore Step-Down Converters featuringan ultra-lowstand-bycurrentof30 nA. The
• Core Power inHDDs LM2832 utilizescurrent-modecontroland internal compensationtoprovidehigh-performanceregulation• Set-TopBoxes overa wide range ofoperatingconditions.Additional• USB Powered Devices featuresincludeinternalsoft-startcircuitryto reduce
• DSL Modems inrushcurrent,pulse-by-pulsecurrentlimit,thermal shutdown,and outputover-voltageprotection. TypicalApplicationCircuit Pleasebe aware thatan importantnoticeconcerningavailability,standardwarranty,and use incriticalapplicationsof Texas Instrumentssemiconductorproductsand disclaimerstheretoappearsattheend ofthisdatasheet. 2Alltrademarksarethepropertyoftheirrespectiveowners. PRODUCTION DATA informationiscurrentas ofpublicationdate. Copyright© 2006–2013,Texas InstrumentsIncorporatedProductsconform to specificationsper the terms of the Texas Instrumentsstandardwarranty.Productionprocessingdoes not necessarilyincludetestingofallparameters.

5 GND

SNVS455A –AUGUST 2006–REVISED APRIL 2013 www.ti.com Connection Diagrams Figure1.6-PinWSON Figure2.8-PineMSOP-PowerPAD PIN DESCRIPTIONS 8-PINeMSOP-PowerPAD Pin Name Function 1 VIND Power Inputsupply. 2 VINA Controlcircuitrysupplyvoltage.ConnectVINA toVIND on PC board. 3,5,7 GND Signaland power groundpin.Placethebottomresistorofthefeedbacknetworkas closeas possibletothispin. 4 EN Enablecontrolinput.Logichighenablesoperation.Do notallowthispintofloatorbe greaterthan VIN + 0.3V. 6 FB Feedback pin.Connecttoexternalresistordividertosetoutputvoltage. 8 SW Outputswitch.Connecttotheinductorand catchdiode. DAP DieAttachPad Connecttosystemgroundforlowthermalimpedance,butitcannotbe used as a primaryGND connection. PIN DESCRIPTIONS 6-PINWSON Pin Name Function 1 FB Feedback pin.Connecttoexternalresistordividertosetoutputvoltage. 2 GND Signaland power groundpin.Placethebottomresistorofthefeedbacknetworkas closeas possibletothispin. 3 SW Outputswitch.Connecttotheinductorand catchdiode. 4 VIND Power Inputsupply. 5 VINA Controlcircuitrysupplyvoltage.ConnectVINA toVIND on PC board. 6 EN Enablecontrolinput.Logichighenablesoperation.Do notallowthispintofloatorbe greaterthan VINA + 0.3V. DAP DieAttachPad Connecttosystemgroundforlowthermalimpedance,butitcannotbe used as a primaryGND connection.

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www.ti.com SNVS455A –AUGUST 2006–REVISED APRIL 2013 AbsoluteMaximum Ratings(1)(2) VIN -0.5Vto7V FB Voltage -0.5Vto3V EN Voltage -0.5Vto7V SW Voltage -0.5Vto7V ESD Susceptibility 2kV JunctionTemperature(3) 150°C StorageTemperature −65°C to+150°C SolderingInformation InfraredorConvectionReflow(15sec) 220°C (1) Absolutemaximum ratingsindicatelimitsbeyond whichdamage tothedevicemay occur.OperatingRange indicatesconditionsfor whichthedeviceisintendedtobe functional,butdoes notensurespecificperformancelimits.Forensuredspecificationsand test conditions,see theElectricalCharacteristics. (2) IfMilitary/Aerospacespecifieddevicesarerequired,pleasecontacttheTexas InstrumentsSalesOffice/Distributorsforavailabilityand specifications. (3) Thermalshutdownwilloccurifthejunctiontemperatureexceedsthemaximum junctiontemperatureofthedevice. OperatingRatings VIN 3V to5.5V JunctionTemperature −40°C to+125°C Copyright© 2006–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 3 ProductFolderLinks:LM2832

SNVS455A –AUGUST 2006–REVISED APRIL 2013 www.ti.com ElectricalCharacteristics VIN = 5V unlessotherwiseindicatedundertheConditionscolumn.LimitsinstandardtypeareforTJ = 25°C only;limitsin boldfacetypeapplyoverthejunctiontemperature(TJ)rangeof-40°C to+125°C. Minimum and Maximum limitsareensured throughtest,design,orstatisticalcorrelation.Typicalvaluesrepresentthemost likelyparametricnorm atTJ = 25°C, and are providedforreferencepurposesonly. Symbol Parameter Conditions Min Typ Max Units VFB Feedback Voltage VeMSOP-PowerPAD-8 0.584 0.600 0.616 Package ΔVFB /VIN Feedback VoltageLineRegulation VIN = 3V to5V 0.02 %/V IB Feedback InputBiasCurrent 0.1 100 nA VIN Rising 2.73 2.90 V UndervoltageLockout UVLO VIN Falling 1.85 2.3 UVLO Hysteresis 0.43 V LM2832-X 1.2 1.6 1.95 FSW SwitchingFrequency LM2832-Y 0.4 0.55 0.7 MHz LM2832-Z 2.25 3.0 3.75 LM2832-X 86 94 D MAX Maximum DutyCycle LM2832-Y 90 96 % LM2832-Z 82 90 LM2832-X 5 D MIN Minimum DutyCycle LM2832-Y 2 % LM2832-Z 7 R DS(ON) SwitchOn Resistance m ΩeMSOP-PowerPAD-8 155 240 Package ICL SwitchCurrentLimit VIN = 3.3V 2.4 3.25 A Shutdown ThresholdVoltage 0.4 VEN_TH V EnableThresholdVoltage 1.8 ISW SwitchLeakage 100 nA IEN EnablePinCurrent Sink/Source 100 nA LM2832X VFB = 0.55 3.3 5 QuiescentCurrent(switching) LM2831Y VFB = 0.55 2.8 4.5 mA IQ LM2832Z VFB = 0.55 4.3 6.5 QuiescentCurrent(shutdown) AllOptionsVEN = 0V 30 nA JunctiontoAmbient WSON-6 and eMSOP- 80θJA °C/W0 LFPM AirFlow(1) PowerPAD-8 Packages WSON-6 and eMSOP- 18θJC JunctiontoCase (1) °C/WPowerPAD-8 Packages TSD ThermalShutdown Temperature 165 °C (1) Appliesforpackagessoldereddirectlyontoa 3”x 3”PC boardwith2oz.copperon 4 layersinstillair.

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www.ti.com SNVS455A –AUGUST 2006–REVISED APRIL 2013 TypicalPerformance Characteristics AllcurvestakenatVIN = 5.0Vwithconfigurationintypicalapplicationcircuitshown inApplicationsInformationsectionofthis datasheet.TJ = 25°C, unlessotherwisespecified. η vs Load "X,Y and Z" Vin = 3.3V,Vo = 1.8V η vs Load "X" Vin = 5V,Vo = 1.8V& 3.3V Figure3. Figure4. η vs Load -"Y" Vin = 5V,Vo = 3.3V& 1.8V η vs Load "Z" Vin = 5V,Vo = 3.3V& 1.8V Figure5. Figure6. Load RegulationVin = 3.3V,Vo = 1.8V(AllOptions) Load RegulationVin = 5V,Vo = 1.8V(AllOptions) Figure7. Figure8. Copyright© 2006–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 5 ProductFolderLinks:LM2832

-45 -40 -10 20 50 80 110 125 130 TEMPERATURE ( oC) CURRENT LIMIT (mA) 2800 2900 3000 3100 3200 3300 3400 3500 3600 3700 3800 -45 -40 -10 20 50 80 110 125 130 TEMPERATURE (° C) OSCILLATOR FREQUENCY (MHz) 0.46 0.48 0.50 0.52 0.54 0.56 0.58 0.60 -45 -40 -10 20 50 80 110 125 130 TEMPERATURE (ºC) OSCILLATOR FREQUENCY (MHz) 2.55 2.65 2.75 2.85 2.95 3.05 3.15 3.25 3.35 3.45 -45 -40 -10 20 50 80 110 125 130 TEMPERATURE (ºC) OSCILLATOR FREQUENCY (MHz) 1.36 1.41 1.46 1.51 1.56 1.61 1.66 1.71 1.76 1.81 LM2832 SNVS455A –AUGUST 2006–REVISED APRIL 2013 www.ti.com TypicalPerformance Characteristics(continued) AllcurvestakenatVIN = 5.0Vwithconfigurationintypicalapplicationcircuitshown inApplicationsInformationsectionofthis datasheet.TJ = 25°C, unlessotherwisespecified. Load RegulationVin = 5V,Vo = 3.3V(AllOptions) OscillatorFrequency vs Temperature -"X" Figure9. Figure10. OscillatorFrequency vs Temperature -"Y" OscillatorFrequency vs Temperature -"Z" Figure11. Figure12. CurrentLimitvs Temperature Vin = 3.3V RDSON vs Temperature (WSON-6 Package) Figure13. Figure14.

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-45 -40 -10 20 50 80 110 125 130 TEMPERATURE (ºC) FEEBACK VOLTAGE (V) 0.590 0.595 0.600 0.605 0.610 -45 -40 -10 20 50 80 110 125 130 TEMPERATURE (ºC) 4.0 4.1 4.2 4.3 4.4 4.5 4.6 IQ (mA) -45 -40 -10 20 50 80 110 125 130 TEMPERATURE (° C) 2.15 2.2 2.25 2.3 2.35 2.4 2.45 2.5 2.55 2.6 2.65 IQ (mA) -45 -40 -10 20 50 80 110 125 130 TEMPERATURE (ºC) 3.0 3.1 3.2 3.3 3.4 3.5 3.6 IQ (mA) LM2832 www.ti.com SNVS455A –AUGUST 2006–REVISED APRIL 2013 TypicalPerformance Characteristics(continued) AllcurvestakenatVIN = 5.0Vwithconfigurationintypicalapplicationcircuitshown inApplicationsInformationsectionofthis datasheet.TJ = 25°C, unlessotherwisespecified. RDSON vs Temperature (eMSOP-PowerPAD-8 Package) LM2832X IQ (QuiescentCurrent) Figure15. Figure16. LM2832Y IQ (QuiescentCurrent) LM2832Z IQ (QuiescentCurrent) Figure17. Figure18. LineRegulationVo = 1.8V,Io= 500mA VFB vs Temperature Figure19. Figure20. Copyright© 2006–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 7 ProductFolderLinks:LM2832

S R R Q GND FB SW VINEN DRIVER ArtificialRamp SHDNThermal SHDNOVP

1.6 MHz

15 . 1 xREFV Control Logic VREF = 0.6V LM2832 SNVS455A –AUGUST 2006–REVISED APRIL 2013 www.ti.com TypicalPerformance Characteristics(continued) AllcurvestakenatVIN = 5.0Vwithconfigurationintypicalapplicationcircuitshown inApplicationsInformationsectionofthis datasheet.TJ = 25°C, unlessotherwisespecified. Gain vs Frequency (Vin= 5V,Vo = 1.2V@ 1A) Phase Plotvs Frequency (Vin= 5V,Vo = 1.2V@ 1A) Figure21. Figure22. SimplifiedBlock Diagram Figure23.

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t t Inductor Current D = TON /TSW VSW TOFF TSW IL IPK SW Voltage LM2832 www.ti.com SNVS455A –AUGUST 2006–REVISED APRIL 2013 APPLICATIONS INFORMATION THEORY OF OPERATION The LM2832 isa constantfrequencyPWM buck regulatorIC thatdeliversa 2.0A loadcurrent.The regulatorhas a presetswitchingfrequencyof1.6MHz or3.0MHz. ThishighfrequencyallowstheLM2832 tooperatewithsmall surfacemount capacitorsand inductors,resultingin a DC/DC converterthatrequiresa minimum amount of board space. The LM2832 is internallycompensated, so itis simple to use and requiresfew external components.The LM2832 uses current-modecontrolto regulatethe outputvoltage.The followingoperating descriptionof the LM2832 willreferto the SimplifiedBlock Diagram (Figure23) and to the waveforms in Figure24. The LM2832 suppliesa regulatedoutputvoltageby switchingthe internalPMOS controlswitchat constantfrequencyand variableduty cycle.A switchingcyclebeginsat the fallingedge of the resetpulse generatedby the internaloscillator.When thispulsegoes low,the outputcontrollogicturnson the internal PMOS controlswitch.Duringthison-time,the SW pinvoltage(VSW ) swings up to approximatelyVIN, and the inductorcurrent(IL)increaseswitha linearslope.IL ismeasured by thecurrentsense amplifier,whichgenerates an outputproportionaltotheswitchcurrent.The sense signalissummed withtheregulator’s correctiveramp and compared to the erroramplifier’s output,which isproportionalto the differencebetween the feedbackvoltage and VREF .When thePWM comparatoroutputgoes high,theoutputswitchturnsoffuntilthenextswitchingcycle begins.Duringtheswitchoff-time,inductorcurrentdischargesthroughtheSchottkycatchdiode,whichforcesthe SW pin to swing below ground by the forwardvoltage(VD ) of the Schottkycatchdiode.The regulatorloop adjuststhedutycycle(D)tomaintaina constantoutputvoltage. Figure24. TypicalWaveforms SOFT-START ThisfunctionforcesVOUT toincreaseata controlledrateduringstartup.Duringsoft-start,theerroramplifier’s referencevoltageramps from0V toitsnominalvalueof0.6V inapproximately600 µs.Thisforcestheregulator outputtoramp up ina controlledfashion,whichhelpsreduceinrushcurrent. OUTPUT OVERVOLTAGE PROTECTION The over-voltagecomparatorcompares the FB pinvoltageto a voltagethatis15% higherthan the internal referenceVREF . Once the FB pinvoltagegoes 15% above the internalreference,the internalPMOS control switchisturnedoff,whichallowstheoutputvoltagetodecreasetowardregulation. UNDERVOLTAGE LOCKOUT Under-voltagelockout(UVLO) preventstheLM2832 from operatinguntiltheinputvoltageexceeds 2.73V (typ). The UVLO thresholdhas approximately430 mV ofhysteresis,so thepartwilloperateuntilVIN dropsbelow 2.3V (typ).Hysteresispreventsthepartfromturningoffduringpower up ifVIN isnon-monotonic. Copyright© 2006–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 9 ProductFolderLinks:LM2832

L = 2'iL DT S t Li' OUTI STSDT L VOUT L - VOUTVIN D = VOUT + VD VIN + VD - VSW D = VOUT VIN LM2832 SNVS455A –AUGUST 2006–REVISED APRIL 2013 www.ti.com CURRENT LIMIT The LM2832 uses cycle-by-cyclecurrentlimitingto protectthe outputswitch.Duringeach switchingcycle,a currentlimitcomparatordetectsiftheoutputswitchcurrentexceeds 3.25A (typ),and turnsofftheswitchuntilthe nextswitchingcyclebegins. THERMAL SHUTDOWN Thermalshutdown limitstotalpower dissipationby turningofftheoutputswitchwhen theIC junctiontemperature exceeds 165°C. Afterthermalshutdown occurs,theoutputswitchdoesn’tturnon untilthejunctiontemperature dropstoapproximately150°C. Design Guide INDUCTOR SELECTION The DutyCycle(D)can be approximatedquicklyusingtheratioofoutputvoltage(VO )toinputvoltage(VIN): (1) The catchdiode(D1)forwardvoltagedropand thevoltagedrop acrosstheinternalPMOS must be includedto calculatea more accuratedutycycle.CalculateD by usingthefollowingformula: (2) VSW can be approximatedby: VSW = IOUT x R DSON (3) The diodeforwarddrop (VD ) can range from 0.3V to0.7V dependingon thequalityofthediode.The lowerthe VD ,thehighertheoperatingefficiencyoftheconverter.The inductorvaluedeterminestheoutputripplecurrent. Lower inductorvaluesdecreasethesizeoftheinductor,butincreasetheoutputripplecurrent.An increaseinthe inductorvaluewilldecreasetheoutputripplecurrent. One must ensurethattheminimum currentlimit(2.4A)isnotexceeded,so thepeak currentintheinductormust be calculated.The peak current(ILPK )intheinductoriscalculatedby: ILPK = IOUT + ΔiL (4) Figure25. InductorCurrent (5) Ingeneral, ΔiL = 0.1x (IOUT )→ 0.2x (IOUT ) (6) IfΔiL = 20% of 2A, the peak currentinthe inductorwillbe 2.4A.The minimum ensured currentlimitover all operatingconditionsis2.4A.One can eitherreduceΔiL,ormake theengineeringjudgmentthatzeromarginwill be safeenough.The typicalcurrentlimitis3.25A.

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'VOUT = 'IL R ESR +8 x FSW x COUT IRMS_IN = IOUT x D(1 - D) IRMS_IN D IOUT 2 (1-D) +'i2 TS = fS x (VIN - VOUT )L = 2'iL DT S LM2832 www.ti.com SNVS455A –AUGUST 2006–REVISED APRIL 2013 The LM2832 operatesat frequenciesallowingthe use of ceramic outputcapacitorswithoutcompromising transientresponse.Ceramic capacitorsallowhigherinductorripplewithoutsignificantlyincreasingoutputripple. See theOUTPUT CAPACITOR formore detailson calculatingoutputvoltageripple.Now thattheripplecurrent isdetermined,theinductanceiscalculatedby: where (8) (8) When selectingan inductor,make surethatitiscapableofsupportingthepeak outputcurrentwithoutsaturating. Inductorsaturationwillresultin a sudden reductionin inductanceand preventthe regulatorfrom operating correctly.Because of the speed of the internalcurrentlimit,the peak currentof the inductorneed onlybe specifiedfortherequiredmaximum outputcurrent.For example,ifthedesignedmaximum outputcurrentis1.0A and thepeak currentis1.25A,thentheinductorshouldbe specifiedwitha saturationcurrentlimitof> 1.25A. There isno need tospecifythesaturationorpeak currentoftheinductoratthe3.25A typicalswitchcurrentlimit. The differenceininductorsizeisa factorof5.Because oftheoperatingfrequencyoftheLM2832, ferritebased inductorsare preferredtominimizecorelosses.Thispresentslittlerestrictionsincethevarietyofferrite-based inductorsishuge.Lastly,inductorswithlowerseriesresistance(RDCR )willprovidebetteroperatingefficiency.For recommended inductorssee Example Circuits. INPUT CAPACITOR An inputcapacitorisnecessaryto ensure thatVIN does not drop excessivelyduringswitchingtransients.The primaryspecificationsoftheinputcapacitorare capacitance,voltage,RMS currentrating,and ESL (Equivalent SeriesInductance).The recommended inputcapacitanceis22 µF.The inputvoltageratingisspecificallystated by thecapacitormanufacturer.Make suretocheck any recommended deratingsand alsoverifyifthereisany significantchange in capacitanceat the operatinginputvoltageand the operatingtemperature.The input capacitormaximum RMS inputcurrentrating(IRMS-IN )must be greaterthan: (9) Neglectinginductorripplesimplifiestheabove equationto: (10) Itcan be shown from theabove equationthatmaximum RMS capacitorcurrentoccurswhen D = 0.5.Always calculatetheRMS atthepointwhere thedutycycleD isclosestto0.5.The ESL ofan inputcapacitorisusually determinedby theeffectivecrosssectionalareaofthecurrentpath.A largeleadedcapacitorwillhave highESL and a 0805 ceramicchipcapacitorwillhave verylow ESL. At theoperatingfrequenciesoftheLM2832, leaded capacitorsmay have an ESL so largethatthe resultingimpedance (2πfL)willbe higherthan thatrequiredto providestableoperation.As a result,surfacemount capacitorsarestronglyrecommended. Sanyo POSCAP, Tantalumor Niobium,PanasonicSP, and multilayerceramiccapacitors(MLCC) are allgood choicesforbothinputand outputcapacitorsand have verylow ESL. For MLCCs itisrecommended touse X7R or X5R typecapacitorsdue to theirtoleranceand temperaturecharacteristics.Consultcapacitormanufacturer datasheetstosee how ratedcapacitancevariesoveroperatingconditions. OUTPUT CAPACITOR The outputcapacitorisselectedbased upon thedesiredoutputrippleand transientresponse.The initialcurrent ofa loadtransientisprovidedmainlyby theoutputcapacitor.The outputrippleoftheconverteris: (11) Copyright© 2006–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 11 ProductFolderLinks:LM2832

K = POUT POUT + PLOSS K = POUT PIN x R2R1 = VREF VOUT - 1 LM2832 SNVS455A –AUGUST 2006–REVISED APRIL 2013 www.ti.com When usingMLCCs, theESR istypicallyso low thatthecapacitiveripplemay dominate.When thisoccurs,the outputripplewillbe approximatelysinusoidaland 90° phase shiftedfrom the switchingaction.Given the availabilityand qualityofMLCCs and theexpectedoutputvoltageofdesignsusingtheLM2832, thereisreallyno need toreviewany othercapacitortechnologies.Anotherbenefitofceramiccapacitorsistheirabilitytobypass highfrequencynoise.A certainamount ofswitchingedge noisewillcouplethroughparasiticcapacitancesinthe inductorto the output.A ceramiccapacitorwillbypass thisnoisewhilea tantalumwillnot.Since the output capacitorisone of the two externalcomponents thatcontrolthe stabilityof the regulatorcontrolloop,most applicationswillrequirea minimum of22 µF ofoutputcapacitance.Capacitanceoften,butnotalways,can be increasedsignificantlywithlittledetrimentto the regulatorstability.Like the inputcapacitor,recommended multilayerceramiccapacitorsareX7R orX5R types. CATCH DIODE The catchdiode(D1)conductsduringtheswitchoff-time.A Schottkydiodeisrecommended foritsfastswitching timesand lowforwardvoltagedrop.The catchdiodeshouldbe chosen so thatitscurrentratingisgreaterthan: ID1 = IOUT x (1-D) (12) The reversebreakdown ratingofthediodemust be atleastthemaximum inputvoltageplusappropriatemargin. To improveefficiency,choose a Schottkydiodewitha lowforwardvoltagedrop. OUTPUT VOLTAGE The outputvoltageissetusingthefollowingequationwhere R2 isconnectedbetween theFB pinand GND, and R1 isconnectedbetween VO and the FB pin.A good valueforR2 is10kΩ. When designinga unitygain converter(Vo = 0.6V),R1 shouldbe between 0Ω and 100Ω,and R2 shouldbe equalorgreaterthan10kΩ. (13) VREF = 0.60V (14) PCB LAYOUT CONSIDERATIONS When planninglayoutthereare a few thingstoconsiderwhen tryingtoachievea clean,regulatedoutput.The most importantconsiderationistheclosecouplingoftheGND connectionsoftheinputcapacitorand thecatch diodeD1. These groundends shouldbe closetoone anotherand be connectedtotheGND planewithatleast two through-holes.Placethesecomponents as closetotheIC as possible.Next inimportanceisthelocationof theGND connectionoftheoutputcapacitor,whichshouldbe neartheGND connectionsofCIN and D1. There shouldbe a continuousgroundplaneon thebottomlayerofa two-layerboardexceptundertheswitchingnode island.The FB pinisa highimpedance node and careshouldbe takentomake theFB traceshorttoavoidnoise pickupand inaccurateregulation.The feedbackresistorsshouldbe placedas closeas possibletotheIC,with theGND ofR1 placedas closeas possibletotheGND oftheIC.The VOUT tracetoR2 shouldbe routedaway fromtheinductorand any othertracesthatareswitching.High AC currentsflowthroughtheVIN,SW and VOUT traces,so theyshouldbe as shortand wide as possible.However, making thetraceswide increasesradiated noise,so the designermust make thistrade-off.Radiatednoisecan be decreased by choosinga shielded inductor.The remainingcomponents should also be placed as close as possibleto the IC. Please see four-layerlayout. CalculatingEfficiency,and JunctionTemperature The completeLM2832 DC/DC converterefficiencycan be calculatedinthefollowingmanner. (15) Or (16) Calculationsfordeterminingthemost significantpower lossesareshown below.Otherlossestotalinglessthan 2% arenotdiscussed.

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PCOND = (IOUT 2 x D) 1 31 + x 'iL IOUT R DSON D = VOUT + VD + VDCR VIN + VD + VDCR - VSW D = VOUT + VD VIN + VD - VSW LM2832 www.ti.com SNVS455A –AUGUST 2006–REVISED APRIL 2013 Power loss (PLOSS ) is the sum of two basic types of lossesin the converter:switchingand conduction. Conductionlossesusuallydominateathigheroutputloads,whereas switchinglossesremainrelativelyfixedand dominateatloweroutputloads.The firststepindeterminingthelossesistocalculatethedutycycle(D): (17) VSW isthevoltagedropacrosstheinternalPFET when itison,and isequalto: VSW = IOUT x R DSON (18) VD istheforwardvoltagedropacrosstheSchottkycatchdiode.Itcan be obtainedfromthediodemanufactures ElectricalCharacteristicssection.Ifthe voltagedrop acrossthe inductor(VDCR ) isaccountedfor,the equation becomes: (19) The conductionlossesinthefree-wheelingSchottkydiodearecalculatedas follows: PDIODE = VD x IOUT x (1-D) (20) Oftenthisisthe singlemost significantpower lossinthe circuit.Care shouldbe takento choose a Schottky diodethathas a lowforwardvoltagedrop. Another significantexternalpower lossis the conductionlossin the outputinductor.The equationcan be simplifiedto: PIND = IOUT 2 x R DCR (21) The LM2832 conductionlossismainlyassociatedwiththeinternalPFET: (22) Iftheinductorripplecurrentisfairlysmall,theconductionlossescan be simplifiedto: PCOND = IOUT 2 x R DSON x D (23) Switchinglossesare alsoassociatedwiththeinternalPFET. They occurduringtheswitchon and offtransition periods,where voltagesand currentsoverlapresultinginpower loss.The simplestmeans todeterminethisloss istoempiricallymeasuringtheriseand falltimes(10% to90%) oftheswitchattheswitchnode. SwitchingPower Loss iscalculatedas follows: PSWR = 1/2(VIN x IOUT x FSW x TRISE) (24) PSWF = 1/2(VIN x IOUT x FSW x TFALL ) (25) PSW = PSWR + PSWF (26) Anotherlossisthepower requiredforoperationoftheinternalcircuitry: PQ = IQ x VIN (27) IQ isthequiescentoperatingcurrent,and istypicallyaround2.5mA forthe0.55MHz frequencyoption. TypicalApplicationpower lossesare: Copyright© 2006–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 13 ProductFolderLinks:LM2832

R TJA= TJ - TA Power R T= 'T Power LM2832 SNVS455A –AUGUST 2006–REVISED APRIL 2013 www.ti.com Table1.Power Loss Tabulation VIN 5.0V VOUT 3.3V POUT 5.78W IOUT 1.75A VD 0.45V PDIODE 262mW FSW 550kHz IQ 2.5mA PQ 12.5mW TRISE 4nS PSWR 10mW TFALL 4nS PSWF 10mW R DS(ON) 150m Ω PCOND 306mW INDDCR 50m Ω PIND 153mW D 0.667 PLOSS 753mW η 88% PINTERNAL 339mW ΣPCOND + PSW + PDIODE + PIND + PQ = PLOSS (28) ΣPCOND + PSWF + PSWR + PQ = PINTERNAL (29) PINTERNAL = 339mW (30) Thermal Definitions TJ Chipjunctiontemperature TA Ambienttemperature R θJC Thermalresistancefromchipjunctiontodevicecase R θJA Thermalresistancefromchipjunctiontoambientair Heat intheLM2832 due tointernalpower dissipationisremoved throughconductionand/orconvection. Conduction Heat transferoccursthroughcrosssectionalareasofmaterial.Dependingon thematerial,the transferofheatcan be consideredtohave poortogood thermalconductivityproperties(insulatorvs. conductor). Heat Transfergoes as: Silicon→ package → leadframe→ PCB Convection Heat transferisby means ofairflow.Thiscouldbe froma fanornaturalconvection.Natural convectionoccurswhen aircurrentsrisefromthehotdevicetocoolerair. Thermalimpedance isdefinedas: (31) Thermalimpedance fromthesiliconjunctiontotheambientairisdefinedas: (32) The PCB size,weightofcopperused toroutetracesand groundplane,and number oflayerswithinthePCB can greatlyeffectR θJA. The type and number of thermalviascan also make a largedifferencein the thermal impedance.Thermalviasarenecessaryinmost applications.They conductheatfromthesurfaceofthePCB to theground plane.Four tosixthermalviasshouldbe placedunder theexposed pad totheground planeifthe WSON package isused. Thermal impedance alsodepends on thethermalpropertiesoftheapplicationoperatingconditions(Vin,Vo, Io etc),and thesurroundingcircuitry.

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R TJA= 165oC - 126oC 339 mW = 115o C/W R TJA= 165° - Ta PINTERNAL R )JC= TJ - TC Power LM2832 www.ti.com SNVS455A –AUGUST 2006–REVISED APRIL 2013 SiliconJunctionTemperature DeterminationMethod 1: To accuratelymeasure the silicontemperaturefora givenapplication,two methods can be used. The first method requirestheusertoknow thethermalimpedance ofthesiliconjunctiontotopcase temperature. Some clarificationneeds tobe made beforewe go any further. R θJC isthethermalimpedance fromallsixsidesofan IC package tosiliconjunction. R ΦJC isthethermalimpedance fromtopcase tothesiliconjunction. In thisdata sheetwe willuse R ΦJC so thatitallowsthe user to measure top case temperaturewitha small thermocoupleattachedtothetopcase. R ΦJC isapproximately30°C/Watt forthe 6-pinWSON package withthe exposed pad. Knowing the internal dissipationfrom theefficiencycalculationgivenpreviously,and thecase temperature,which can be empirically measured on thebench we have: (33) Therefore: Tj= (RΦJC x PLOSS )+ TC (34) From thepreviousexample: Tj= (RΦJC x PINTERNAL )+ TC (35) Tj= 30°C/W x 0.339W + TC (36) The second method can givea veryaccuratesiliconjunctiontemperature. The firststep isto determineR θJA of the application.The LM2832 has over-temperatureprotectioncircuitry. When the silicontemperaturereaches 165°C, the device stops switching.The protectioncircuitryhas a hysteresisofabout15°C. Once thesilicontemperaturehas decreasedtoapproximately150°C, thedevicewill starttoswitchagain.Knowing this,theR θJA forany applicationcan be characterizedduringtheearlystagesof the designone may calculatethe R θJA by placingthe PCB circuitintoa thermalchamber. Raise the ambient temperatureinthegivenworkingapplicationuntilthecircuitentersthermalshutdown.IftheSW-pin ismonitored, itwillbe obviouswhen theinternalPFET stopsswitching,indicatinga junctiontemperatureof165°C. Knowing theinternalpower dissipationfrom theabove methods,thejunctiontemperature,and theambienttemperature R θJA can be determined. (37) Once thisisdetermined,themaximum ambienttemperatureallowedfora desiredjunctiontemperaturecan be found. An example of calculatingR θJA foran applicationusingthe Texas InstrumentsLM2832 WSON demonstration boardisshown below. The fourlayerPCB isconstructedusingFR4 with½ oz coppertraces.The coppergroundplaneison thebottom withno forcedairflow.The ambienttemperaturewas raisedto126°C, and atthattemperature,thedevicewent intothermalshutdown. From thepreviousexample: PINTERNAL = 339mW (38) (39) Ifthejunctiontemperaturewas tobe keptbelow125°C, thentheambienttemperaturecouldnotgo above 86°C. Tj-(RθJA x PLOSS )= TA (40) Copyright© 2006–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 15 ProductFolderLinks:LM2832

SNVS455A –AUGUST 2006–REVISED APRIL 2013 www.ti.com

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www.ti.com SNVS455A –AUGUST 2006–REVISED APRIL 2013 Figure26. InternalWSON Connection For certainhighpower applications,thePCB landmay be modifiedtoa "dog bone" shape (seeFigure27).By increasingthesizeofgroundplane,and addingthermalvias,theR θJA fortheapplicationcan be reduced. Figure27. 6-Lead WSON PCB Dog Bone Layout Copyright© 2006–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 17 ProductFolderLinks:LM2832

VIN = 5V LM2832 VO = 1.2V @ 2.0A LM2832 SNVS455A –AUGUST 2006–REVISED APRIL 2013 www.ti.com LM2832X Design Example 1 Figure28. LM2832X (1.6MHz):Vin = 5V,Vo = 1.2V@ 2.0A Table2.BillofMaterials PartID PartValue Manufacturer PartNumber U1 2.0ABuck Regulator TI LM2832X C1, InputCap 22µF,6.3V,X5R TDK C3216X5ROJ226M C2, OutputCap 2x22µF,6.3V,X5R TDK C3216X5ROJ226M D1, CatchDiode 0.4VfSchottky2A,20VR DiodesInc. B220/A L1 2.2µH, 3.5A Coilcraft DS3316P-222 R2 15.0kΩ,1% Vishay CRCW08051502F R1 15.0kΩ,1% Vishay CRCW08051502F R3 100kΩ,1% Vishay CRCW08051003F

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VIN = 5V LM2832 VO = 0.6V @ 2.0A LM2832 www.ti.com SNVS455A –AUGUST 2006–REVISED APRIL 2013 LM2832X Design Example 2 Figure29. LM2832X (1.6MHz):Vin = 5V,Vo = 0.6V@ 2.0A Table3.BillofMaterials PartID PartValue Manufacturer PartNumber U1 2.0ABuck Regulator TI LM2832X C1, InputCap 22µF,6.3V,X5R TDK C3216X5ROJ226M C2, OutputCap 2x22µF,6.3V,X5R TDK C3216X5ROJ226M D1, CatchDiode 0.4VfSchottky2A,20VR DiodesInc. B220/A L1 3.3µH, 3.3A Coilcraft DS3316P-332 R2 10.0kΩ,1% Vishay CRCW08051000F R1 0Ω R3 100kΩ,1% Vishay CRCW08051003F Copyright© 2006–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 19 ProductFolderLinks:LM2832

VIN = 5V LM2832 VO = 3.3V @ 2.0A LM2832 SNVS455A –AUGUST 2006–REVISED APRIL 2013 www.ti.com LM2832X Design Example 3 Figure30. LM2832X (1.6MHz):Vin = 5V,Vo = 3.3V@ 2.0A Table4.BillofMaterials PartID PartValue Manufacturer PartNumber U1 2.0ABuck Regulator TI LM2832X C1, InputCap 22µF,6.3V,X5R TDK C3216X5ROJ226M C2, OutputCap 2x22µF,6.3V,X5R TDK C3216X5ROJ226M D1, CatchDiode 0.4VfSchottky2A,20VR DiodesInc. B220/A L1 2.2µH, 2.8A Coilcraft ME3220-222 R2 10.0kΩ,1% Vishay CRCW08051002F R1 45.3kΩ,1% Vishay CRCW08054532F R3 100kΩ,1% Vishay CRCW08051003F

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VIN = 5V LM2832 VO = 3.3V @ 2.0A LM2832 www.ti.com SNVS455A –AUGUST 2006–REVISED APRIL 2013 LM2832Y Design Example 4 Figure31. LM2832Y (550kHz):Vin = 5V,Vout = 3.3V@ 2.0A Table5.BillofMaterials PartID PartValue Manufacturer PartNumber U1 1.5ABuck Regulator TI LM2832Y C1, InputCap 22µF,6.3V,X5R TDK C3216X5ROJ226M C2, OutputCap 2x22µF,6.3V,X5R TDK C3216X5ROJ226M D1, CatchDiode 0.3VfSchottky1.5A,30VR TOSHIBA CRS08 L1 4.7µH 2.1A TDK SLF7045T-4R7M2R0-PF R1 10.0kΩ,1% Vishay CRCW08051002F R2 10.0kΩ,1% Vishay CRCW08051002F Copyright© 2006–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 21 ProductFolderLinks:LM2832

VIN = 5V LM2832 VO = 1.2V @ 2.0A LM2832 SNVS455A –AUGUST 2006–REVISED APRIL 2013 www.ti.com LM2832Y Design Example 5 Figure32. LM2832Y (550kHz):Vin = 5V,Vout = 1.2V@ 2.0A Table6.BillofMaterials PartID PartValue Manufacturer PartNumber U1 1.5ABuck Regulator TI LM2832Y C1, InputCap 22µF,6.3V,X5R TDK C3216X5ROJ226M C2, OutputCap 2x22µF,6.3V,X5R TDK C3216X5ROJ226M D1, CatchDiode 0.3VfSchottky1.5A,30VR TOSHIBA CRS08 L1 6.8µH 1.8A TDK SLF7045T-6R8M1R7 R1 10.0kΩ,1% Vishay CRCW08051002F R2 10.0kΩ,1% Vishay CRCW08051002F

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VIN = 5V LM2832 VO = 3.3V @ 2.0A LM2832 www.ti.com SNVS455A –AUGUST 2006–REVISED APRIL 2013 LM2832Z Design Example 6 Figure33. LM2832Z (3MHz):Vin = 5V,Vo = 3.3V@ 2.0A Table7.BillofMaterials PartID PartValue Manufacturer PartNumber U1 2.0ABuck Regulator TI LM2832Z C1, InputCap 22µF,6.3V,X5R TDK C3216X5ROJ226M C2, OutputCap 2x22µF,6.3V,X5R TDK C3216X5ROJ226M D1, CatchDiode 0.4VfSchottky2A,20VR DiodesInc. B220/A L1 3.3µH, 3.3A Coilcraft DS3316P-332 R2 10.0kΩ,1% Vishay CRCW08051002F R1 45.3kΩ,1% Vishay CRCW08054532F R3 100kΩ,1% Vishay CRCW08051003F Copyright© 2006–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 23 ProductFolderLinks:LM2832

VIN = 5V LM2832 VO = 1.2V @ 2.0A LM2832 SNVS455A –AUGUST 2006–REVISED APRIL 2013 www.ti.com LM2832Z Design Example 7 Figure34. LM2832Z (3MHz):Vin = 5V,Vo = 1.2V@ 2.0A Table8.BillofMaterials PartID PartValue Manufacturer PartNumber U1 2.0ABuck Regulator TI LM2832Z C1, InputCap 22µF,6.3V,X5R TDK C3216X5ROJ226M C2, OutputCap 2x22µF,6.3V,X5R TDK C3216X5ROJ226M D1, CatchDiode 0.4VfSchottky2A,20VR DiodesInc. B220/A L1 4.7µH, 2.7A Coilcraft DS3316P-472 R2 10.0kΩ,1% Vishay CRCW08051002F R1 10.0kΩ,1% Vishay CRCW08051002F R3 100kΩ,1% Vishay CRCW08051003F

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LP3470M5X-3.08 VINAVIND LM2832 LM2832 SW FB EN GND C3 VINAVIND SW FB EN GND R6 3 VIN RESET LP3470 C7VIN VO = 3.3V @ 2.0A VO = 1.2V @ 2.0A LM2832 www.ti.com SNVS455A –AUGUST 2006–REVISED APRIL 2013 LM2832X Dual ConverterswithDelayed Enabled Design Example 8 Table9.BillofMaterials PartID PartValue Manufacturer PartNumber U1, U2 2.0ABuck Regulator TI LM2832X U3 Power on Reset TI LP3470M5X-3.08 C1, C3 InputCap 22µF,6.3V,X5R TDK C3216X5ROJ226M C2, C4 OutputCap 2x22µF,6.3V,X5R TDK C3216X5ROJ226M C7 Trrdelaycapacitor TDK D1, D2 CatchDiode 0.4VfSchottky2A,20VR DiodesInc. B220/A L1,L2 3.3µH, 2.7A Coilcraft ME3220-102 R2, R4, R5 10.0kΩ,1% Vishay CRCW08051002F R1, R6 45.3kΩ,1% Vishay CRCW08054532F R3 100kΩ,1% Vishay CRCW08051003F Copyright© 2006–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 25 ProductFolderLinks:LM2832

GND VO = 3.3V @ 2.0A VO = 5.0V @ 150mA LM2832 VIN = 5V LM2832 SNVS455A –AUGUST 2006–REVISED APRIL 2013 www.ti.com LM2832X Buck Converter& VoltageDouble CircuitwithLDO FollowerDesign Example 9 Table10.BillofMaterials PartID PartValue Manufacturer PartNumber U1 2.0ABuck Regulator TI LM2832X U2 200mA LDO TI LP2986-5.0 C1, InputCap 22µF,6.3V,X5R TDK C3216X5ROJ226M C2, OutputCap 2x22µF,6.3V,X5R TDK C3216X5ROJ226M C3 – C6 2.2µF,6.3V,X5R TDK C1608X5R0J225M D1, CatchDiode 0.4VfSchottky2A,20VR DiodesInc. B220/A D2 0.4VfSchottky20VR ,500mA ON Semi MBR0520 L2 10µH, 800mA CoilCraft ME3220-103 L1 2.2µH, 3.5A CoilCraft DS3316P-222 R2 45.3kΩ,1% Vishay CRCW08054532F R1 10.0kΩ,1% Vishay CRCW08051002F

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www.ti.com SNVS455A –AUGUST 2006–REVISED APRIL 2013

REVISION HISTORY

Changes from Original(April2013)toRevisionA Page Copyright© 2006–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 27 ProductFolderLinks:LM2832

www.ti.com 31-Oct-2025 PACKAGING INFORMATION Orderable part number Status (1) Material type (2) Package | Pins Package qty | Carrier RoHS (3) Lead finish/ Ball material (4) MSL rating/ Peak reflow (5) Op temp (°C) Part marking (6) LM2832XMY/NOPB Active Production HVSSOP (DGN) | 8 1000 | SMALL T&R Yes SN Level-1-260C-UNLIM -40 to 125 SLBB LM2832XMY/NOPB.A Active Production HVSSOP (DGN) | 8 1000 | SMALL T&R Yes SN Level-1-260C-UNLIM -40 to 125 SLBB LM2832XSD/NOPB Active Production WSON (NGG) | 6 1000 | SMALL T&R Yes SN Level-3-260C-168 HR -40 to 125 L196B LM2832XSD/NOPB.A Active Production WSON (NGG) | 6 1000 | SMALL T&R Yes SN Level-3-260C-168 HR -40 to 125 L196B LM2832YMY/NOPB Active Production HVSSOP (DGN) | 8 1000 | SMALL T&R Yes SN Level-1-260C-UNLIM -40 to 125 SLCB LM2832YMY/NOPB.A Active Production HVSSOP (DGN) | 8 1000 | SMALL T&R Yes SN Level-1-260C-UNLIM -40 to 125 SLCB LM2832YSD/NOPB Active Production WSON (NGG) | 6 1000 | SMALL T&R Yes SN Level-3-260C-168 HR -40 to 125 L197B LM2832YSD/NOPB.A Active Production WSON (NGG) | 6 1000 | SMALL T&R Yes SN Level-3-260C-168 HR -40 to 125 L197B LM2832ZMY/NOPB Active Production HVSSOP (DGN) | 8 1000 | SMALL T&R Yes SN Level-1-260C-UNLIM -40 to 125 SLDB LM2832ZMY/NOPB.A Active Production HVSSOP (DGN) | 8 1000 | SMALL T&R Yes SN Level-1-260C-UNLIM -40 to 125 SLDB LM2832ZSD/NOPB Active Production WSON (NGG) | 6 1000 | SMALL T&R Yes SN Level-3-260C-168 HR -40 to 125 L198B LM2832ZSD/NOPB.A Active Production WSON (NGG) | 6 1000 | SMALL T&R Yes SN Level-3-260C-168 HR -40 to 125 L198B (1) Status: For more details on status, see our product life cycle. (2) Material type: When designated, preproduction parts are prototypes/experimental devices, and are not yet approved or released for full production. Testing and final process, including without limitation quality assurance, reliability performance testing, and/or process qualification, may not yet be complete, and this item is subject to further changes or possible discontinuation. If available for ordering, purchases will be subject to an additional waiver at checkout, and are intended for early internal evaluation purposes only. These items are sold without warranties of any kind. (3) RoHS values: Yes, No, RoHS Exempt. See the TI RoHS Statement for additional information and value definition. (4) Lead finish/Ball material: Parts may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two lines if the finish value exceeds the maximum column width. (5) MSL rating/Peak reflow: The moisture sensitivity level ratings and peak solder (reflow) temperatures. In the event that a part has multiple moisture sensitivity ratings, only the lowest level per JEDEC standards is shown. Refer to the shipping label for the actual reflow temperature that will be used to mount the part to the printed circuit board. (6) Part marking: There may be an additional marking, which relates to the logo, the lot trace code information, or the environmental category of the part. Multiple part markings will be inside parentheses. Only one part marking contained in parentheses and separated by a "~" will appear on a part. If a line is indented then it is a continuation of the previous line and the two combined represent the entire part marking for that device. Addendum-Page 1

www.ti.com 31-Oct-2025 Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. Addendum-Page 2

PACKAGE MATERIALS INFORMATION www.ti.com 31-Jul-2025 TAPE AND REEL INFORMATION Reel Width (W1) REEL DIMENSIONS A0B0K0WDimension designed to accommodate the component lengthDimension designed to accommodate the component thicknessOverall width of the carrier tapePitch between successive cavity centersDimension designed to accommodate the component width TAPE DIMENSIONSK0 P1B0WA0Cavity QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE Pocket QuadrantsSprocket HolesQ1Q1Q2Q2Q3Q3Q4Q4User Direction of Feed P1ReelDiameter *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Reel Diameter (mm) Reel Width W1 (mm) (mm) (mm) (mm) (mm) W (mm) Pin1 Quadrant Pack Materials-Page 1

PACKAGE MATERIALS INFORMATION www.ti.com 31-Jul-2025 TAPE AND REEL BOX DIMENSIONS Width (mm) W LH *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) LM2832XMY/NOPB HVSSOP DGN 8 1000 210.0 185.0 35.0 LM2832XSD/NOPB WSON NGG 6 1000 208.0 191.0 35.0 LM2832YMY/NOPB HVSSOP DGN 8 1000 210.0 185.0 35.0 LM2832YSD/NOPB WSON NGG 6 1000 208.0 191.0 35.0 LM2832ZMY/NOPB HVSSOP DGN 8 1000 210.0 185.0 35.0 LM2832ZSD/NOPB WSON NGG 6 1000 208.0 191.0 35.0 Pack Materials-Page 2

www.ti.com PACKAGE OUTLINE C 6X 0.65 1.95 8X 0.38 0.25 5.05

4.75 TYP

0.15 0.05 0.25 GAGE PLANE 0 -8

1.1 MAX

0.23 0.13 1.88 1.58 2.0 1.7 B 3.1 2.9 NOTE 4 A 3.1 2.9 NOTE 3 0.7 0.4 PowerPAD VSSOP - 1.1 mm max heightDGN0008A SMALL OUTLINE PACKAGE 4218836/A 11/2019

0.13 C A B

0.1 C NOTES: 1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing per ASME Y14.5M. 2. This drawing is subject to change without notice. 3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not exceed 0.15 mm per side. 4. This dimension does not include interlead flash. Interlead flash shall not exceed 0.25 mm per side. 5. Reference JEDEC registration MO-187. PowerPAD is a trademark of Texas Instruments. TM A 20 DETAIL A TYPICAL SCALE 4.000 EXPOSED THERMAL PAD

www.ti.com EXAMPLE BOARD LAYOUT

0.05 MAX

0.05 MIN

8X (1.4) 8X (0.45) 6X (0.65) (4.4) (R0.05) TYP (2) NOTE 9 (3) NOTE 9 (1.22) (0.55) ( 0.2) TYP VIA (1.88) (2) PowerPAD VSSOP - 1.1 mm max heightDGN0008A SMALL OUTLINE PACKAGE 4218836/A 11/2019 NOTES: (continued) 6. Publication IPC-7351 may have alternate designs. 7. Solder mask tolerances between and around signal pads can vary based on board fabrication site. 8. Vias are optional depending on application, refer to device data sheet. If any vias are implemented, refer to their locations shown on this view. It is recommended that vias under paste be filled, plugged or tented. 9. Size of metal pad may vary due to creepage requirement. TM LAND PATTERN EXAMPLE EXPOSED METAL SHOWN SCALE: 15X SYMM SYMM SOLDER MASK DEFINED PAD METAL COVERED BY SOLDER MASK SEE DETAILS 15.000 METALSOLDER MASK OPENING METAL UNDER SOLDER MASK SOLDER MASK OPENING EXPOSED METALEXPOSED METAL SOLDER MASK DETAILS NON-SOLDER MASK DEFINED (PREFERRED) SOLDER MASK DEFINED

www.ti.com EXAMPLE STENCIL DESIGN 8X (1.4) 8X (0.45) 6X (0.65) (4.4) (R0.05) TYP (1.88) BASED ON

0.125 THICK

(2) BASED ON PowerPAD VSSOP - 1.1 mm max heightDGN0008A SMALL OUTLINE PACKAGE 4218836/A 11/2019 1.59 X 1.690.175 1.72 X 1.830.15 1.88 X 2.00 (SHOWN)0.125 2.10 X 2.240.1 SOLDER STENCIL OPENING STENCIL THICKNESS NOTES: (continued) 10. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate design recommendations. 11. Board assembly site may have different recommendations for stencil design. TM SOLDER PASTE EXAMPLE EXPOSED PAD 9: 100% PRINTED SOLDER COVERAGE BY AREA SCALE: 15X SYMM SYMM 4 5 METAL COVERED BY SOLDER MASK SEE TABLE FOR DIFFERENT OPENINGS FOR OTHER STENCIL THICKNESSES

www.ti.com SDE06A (Rev A)

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