LM2705 Micropower Step-Up DC-DC Converter With 150-mA Peak Current Limit datasheet (Rev. F)
Document overview
- Manufacturer or author: Texas Instruments, Incorporated [SNVS191,F]
- PDF pages: 23
Technical content
510 k 33 k SW FB GND VIN D VIN = Li-Ion C IN C OUT LM2705 L 68 PH 20 V 6 mA
4.7 PF 1 PFSHDN
Copyright © 2016, Texas Instruments Incorporated Product Folder Sample & Buy T echnical Documents Tools & Software Support & Community An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. LM2705 SNVS191F –NOVEMBER 2002–REVISED OCTOBER 2016 LM2705MicropowerStep-UpDC-DCConverterWith150-mAPeakCurrentLimit
1 Features
1• 2.2-V to 7-V Input Range
- 150-mA, 0.7-Ω Internal Switch
- Adjustable Output Voltage up to 20 V
- Input Undervoltage Lockout
- 0.01-µA Shutdown Current
- Uses Small Surface-Mount Components
- Small 5-Pin SOT-23 Package
2 Applications
- LCD Bias Supplies
- White-LED Backlighting
- Handheld Devices
- Digital Cameras
- Portable Applications
3 Description
The LM2705 is a micropower step-up DC-DC converter in a small 5-pin SOT-23 package. A current-limited, fixed-off-time control scheme conserves operating current, which results in high efficiency over a wide range of load conditions. The 21-V switch allows for output voltages as high as 20 V. The low 400-ns off-time permits the use of tiny, low-profile inductors and capacitors to minimize footprint and cost in space-conscious portable applications. The LM2705 is ideal for LCD panels requiring low current and high efficiency as well as white-LED applications for cellular phone back- lighting. The LM2705 device can drive up to 3 white LEDs from a single Li-Ion battery. The low peak- inductor current of the LM2705 makes it ideal for USB applications. Device Information(1) PART NUMBER PACKAGE BODY SIZE (NOM) LM2705 SOT-23 (5) 2.90 mm × 1.60 mm (1) For all available packages, see the orderable addendum at the end of the data sheet. space space space Typical 20-V Application
SNVS191F –NOVEMBER 2002–REVISED OCTOBER 2016 www.ti.com Product Folder Links: LM2705 Submit Documentation Feedback Copyright © 2002–2016, Texas Instruments Incorporated Table of Contents
11.2 Receiving Notification of Documentation Updates 16
12 Mechanical, Packaging, and Orderable
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision E (May 2013) to Revision F Page
- Added Device Information and Pin Configuration and Functions sections, ESD Ratings and Thermal Information tables, Feature Description, Device Functional Modes, Application and Implementation, Power Supply Recommendations, Layout, Device and Documentation Support, and Mechanical, Packaging, and Orderable Changes from Revision D (May 2013) to Revision E Page
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5 Pin Configuration and Functions
NO. NAME 1 SW Input Power switch input. This is the drain of the internal NMOS power switch. Minimize the metal trace area connected to this pin to minimize EMI. 2 GND — Ground - tie directly to ground plane. 3 FB Input Output voltage feedback input — set the output voltage by selecting values for R1 and R2 using: R1 = R2 × (VOUT / 1.237 V) –1 4 SHDN Input Active low shutdown - drive this pin to > 1.1 V to enable the device. Drive this pin to < 0.3 V to lace the device in a low-power shutdown.
5 VIN Input Analog and power input supply pin
SNVS191F –NOVEMBER 2002–REVISED OCTOBER 2016 www.ti.com Product Folder Links: LM2705 Submit Documentation Feedback Copyright © 2002–2016, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) If Military/Aerospace specified devices are required, contact the TI Sales Office/Distributors for availability and specifications. (3) The maximum allowable power dissipation is a function of the maximum junction temperature, TJ(MAX), the junction-to-ambient thermal resistance, RθJA, and the ambient temperature, TA. See Thermal Information for the thermal resistance. The maximum allowable power dissipation at any ambient temperature is calculated using: PD(MAX) = (TJ(MAX) − TA) / RθJA. Exceeding the maximum allowable power dissipation will cause excessive die temperature.
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)(2) MIN MAX UNIT VIN 7.5 V SW voltage 21 V FB voltage 2 V SHDN voltage 7.5 V Maximum junction temperature, TJ(3) 150 °C Lead temperature Soldering (10 seconds) 300 °C Vapor phase (60 seconds) 215 °C Infrared (15 seconds) 220 °C Storage temperature, Tstg –65 150 °C (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) ESD susceptibility using the machine model is 150 V for SW pin.
6.2 ESD Ratings
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V Machine model(2) ±200 (1) All limits specified at room temperature and at temperature extremes. All room temperature limits are 100% production tested or specified through statistical analysis. All limits at temperature extremes are specified via correlation using standard statistical quality control (SQC) methods. All limits are used to calculate average outgoing quality level (AOQL).
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT Supply voltage 2.2 7 V SW voltage, maximum 20.5 V Junction temperature(1) –40 125 °C (1) For more information about traditional and new thermal metrics, see Semiconductor and IC Package Thermal Metrics.
6.4 Thermal Information
THERMAL METRIC(1) LM2705 UNITDBV (SOT-23)
5 PINS
RθJA Junction-to-ambient thermal resistance 164.9 °C/W RθJC(top) Junction-to-case (top) thermal resistance 116.8 °C/W RθJB Junction-to-board thermal resistance 27.8 °C/W ψJT Junction-to-top characterization parameter 13.6 °C/W ψJB Junction-to-board characterization parameter 27.3 °C/W
www.ti.com SNVS191F –NOVEMBER 2002–REVISED OCTOBER 2016 Product Folder Links: LM2705 Submit Documentation FeedbackCopyright © 2002–2016, Texas Instruments Incorporated (1) All limits specified at room temperature and at temperature extremes. All room temperature limits are 100% production tested or specified through statistical analysis. All limits at temperature extremes are specified via correlation using standard statistical quality control (SQC) methods. all limits are used to calculate average outgoing quality level (AOQL). (2) Typical numbers are at 25°C and represent the most likely norm. (3) Feedback current flows into the pin.
6.5 Electrical Characteristics
Unless otherwise specified, specifications apply for TJ = 25°C and VIN = 2.2 V. PARAMETER TEST CONDITIONS MIN(1) TYP(2) MAX (1) UNIT IQ Device disabled FB = 1.3 V 40 µA FB = 1.3 V, –40°C to 125°C 70 Device enabled FB = 1.2 V 235 FB = 1.2 V, –40°C to 125°C 300 Shutdown SHDN = 0 V 0.01 2.5 VFB Feedback trip point 1.237 V –40°C to 125°C 1.189 1.269 ICL Switch current limit 150 mA –40°C to 125°C 100 180 IB FB pin bias current FB = 1.23 V(3) 30 nA FB = 1.23 V, –40°C to 125°C(3) 120 VIN Input voltage –40°C to 125°C 2.2 7 V RDSON Switch RDSON 0.7 Ω –40°C to 125°C 1.6 TOFF Switch off time 400 ns ISD SHDN pin current SHDN = VIN, TJ = 25°C 0 80 nASHDN = VIN, TJ = 125°C 15 SHDN = GND 0 IL Switch leakage current VSW = 20 V 0.05 5 µA UVP Input undervoltage lockout ON/OFF threshold 1.8 V VFB hysteresis Feedback hysteresis 8 mV SHDN threshold SHDN low 0.7 V –40°C to 125°C 0.3 SHDN high 0.7 –40°C to 125°C 1.1
6.6 Typical Characteristics
Figure 1. Enable Current vs VIN (Device Switching) Figure 2. Disable Current vs VIN (Device Not Switching) Figure 3. SHDN Threshold vs VIN Figure 4. Switch Current Limit vs VIN Figure 5. Switch RDSON vs VIN Figure 6. FB Trip Point and FB Pin Current vs Temperature
50 N SW FB GND SHDN Current Sensing Circuitry Undervoltage Lockout 400ns One Shot CL Adjust CL Comp R 1 50 N Q 1 Q 2 10x R 3 30 N R 4 140 N Driver Logic R F2 Enable Comp VOUT COUT L D VIN CIN Enable R F1 VIN Copyright © 2016, Texas Instruments Incorporated LM2705 SNVS191F –NOVEMBER 2002–REVISED OCTOBER 2016 www.ti.com Product Folder Links: LM2705 Submit Documentation Feedback Copyright © 2002–2016, Texas Instruments Incorporated
7 Detailed Description
7.1 Overview
The LM2705 is a small boost converter utilizing a constant off time architecture. The device can provide up to 20.5 V at the output with up to 150 mA of peak switch current.
7.2 Functional Block Diagram
7.3 Feature Description
The LM2705 device features a constant off-time control scheme. Operation can be best understood by referring to Functional Block Diagram and Figure 11. Transistors Q1 and Q2 and resistors R3 and R4 of Functional Block Diagram form a bandgap reference used to control the output voltage. When the voltage at the FB pin is less than 1.237 V, the Enable Comp in Functional Block Diagram enables the device, and the NMOS switch is turned on pulling the SW pin to ground. When the NMOS switch is on, current begins to flow through inductor L while the load current is supplied by the output capacitor COUT. Once the current in the inductor reaches the current limit, the CL comp trips, and the 400-ns one shot turns off the NMOS switch.The SW voltage then rises to the output voltage plus a diode drop, and the inductor current begins to decrease as shown in Figure 11. During this time the energy stored in the inductor is transferred to COUT and the load. After the 400-ns off-time the NMOS switch is turned on, and energy is stored in the inductor again. This energy transfer from the inductor to the output causes a stepping effect in the output ripple as shown in Figure 11. This cycle is continued until the voltage at FB reaches 1.237 V. When FB reaches this voltage, the Enable Comp disables the device, turning off the NMOS switch and reducing the IQ of the device to 40 µA. The load current is then supplied solely by COUT indicated by the gradually decreasing slope at the output as shown in Figure 11. When the FB pin drops slightly below 1.237 V, the Enable Comp enables the device and begins the cycle described previously.
7.4 Device Functional Modes
The SHDN pin can be used to turn off the LM2705 and reduce the IQ to 0.01 µA. In shutdown mode the output voltage is a diode drop lower than the input voltage.
8 Application and Implementation
validate and test their design implementation to confirm system functionality.
8.1 Application Information
ideal for standard single cell Li+ batteries or 2 to 4 series alkaline batteries.
8.2 Typical Application
current and high light-load efficiency. Figure 12. Typical 20-V Application
8.2.1 Design Requirements
For typical DC-DC converter applications, use the parameters listed in Table 1. Table 1. Design Parameters
8.2.2 Detailed Design Procedure
8.2.2.1 Inductor Selection - Boost Regulator
- VD is the Schottky diode voltage
- ICL is the switch current limit found in the Typical Characteristics
L2 = 2 VOUT + VD ICL TOFF IPK = ICL + VIN(max) L 100 ns LM2705 SNVS191F –NOVEMBER 2002–REVISED OCTOBER 2016 www.ti.com Product Folder Links: LM2705 Submit Documentation Feedback Copyright © 2002–2016, Texas Instruments Incorporated
- TOFF is the switch off time (1) When using this equation be sure to use the minimum input voltage for the application, such as for battery powered applications. For the LM2705 constant-off time control scheme, the NMOS power switch is turned off when the current limit is reached. There is approximately a 100-ns delay from the time the current limit is reached in the NMOS power switch and when the internal logic actually turns off the switch. During this 100-ns delay, the peak inductor current increases. This increase in inductor current demands a larger saturation current rating for the inductor. This saturation current can be approximated by Equation 2: (2) Choosing inductors with low ESR decrease power losses and increase efficiency. Take care when choosing an inductor. For applications that require an input voltage that approaches the output voltage, such as when converting a Li-Ion battery voltage to 5 V, the 400-ns off time may not be enough time to discharge the energy in the inductor and transfer the energy to the output capacitor and load. This can cause a ramping effect in the inductor current waveform and an increased ripple on the output voltage. Using a smaller inductor causes the IPK to increase and increases the output voltage ripple further. For typical curves and evaluation purposes the DT1608C series inductors from Coilcraft were used. Other acceptable inductors include, but are not limited to, the SLF6020T series from TDK, the NP05D series from Taiyo Yuden, the CDRH4D18 series from Sumida, and the P1166 series from Pulse.
8.2.2.2 Inductor Selection - SEPIC Regulator
Equation 3 can be used to calculate the approximate inductor value for a SEPIC regulator: (3) The boost inductor, L1, can be smaller or larger but is generally chosen to be the same value as L2. See Figure 23 and Figure 24 for typical SEPIC applications.
8.2.2.3 Diode Selection
To maintain high efficiency, the average current rating of the Schottky diode should be larger than the peak inductor current, IPK. Schottky diodes with a low forward drop and fast switching speeds are ideal for increasing efficiency in portable applications. Choose a reverse breakdown of the Schottky diode larger than the output voltage.
8.2.2.4 Capacitor Selection
Choose low equivalent series resistance (ESR) capacitors for the output to minimize output voltage ripple. Multilayer ceramic capacitors are the best choice. For most applications, a 1-µF ceramic capacitor is sufficient. For some applications a reduction in output voltage ripple can be achieved by increasing the output capacitor. Output voltage ripple can further be reduced by adding a 4.7-pF feed-forward capacitor in the feedback network placed in parallel with RF1 (see Functional Block Diagram). Local bypassing for the input is needed on the LM2705. Multilayer ceramic capacitors are a good choice for this as well. A 4.7-µF capacitor is sufficient for most applications. For additional bypassing, a 100-nF ceramic capacitor can be used to shunt high frequency ripple on the input.
8.2.3 Application Curves
Figure 13. Efficiency vs Load Current Figure 14. Efficiency vs Load Current Figure 15. Output Ripple Voltage Figure 16. Output Ripple Voltage Figure 17. Two White-LED Efficiency Figure 18. Three White-LED Efficiency
8.3 Additional Applications
Figure 19. Two White-LED Application Figure 20. Three White-LED Application
2.5 V ± 7 V
Figure 23. 3.3-V SEPIC Application Figure 24. 5-V SEPIC Application
9 Power Supply Recommendations
LM2705, additional bulk capacitance may be required in addition to the ceramic bypass capacitors.
10 Layout
10.1 Layout Guidelines
inductor and Schottky diode to reduce power dissipation and increase overall efficiency.
10.2 Layout Example
Figure 25. LM2705 Layout Example
SNVS191F –NOVEMBER 2002–REVISED OCTOBER 2016 www.ti.com Product Folder Links: LM2705 Submit Documentation Feedback Copyright © 2002–2016, Texas Instruments Incorporated
11 Device and Documentation Support
11.1 Device Support
11.1.1 Third-Party Products Disclaimer
TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE.
11.2 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper right corner, click on Alert me to register and receive a weekly digest of any product information that has changed. For change details, review the revision history included in any revised document.
11.3 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support.
11.4 Trademarks
E2E is a trademark of Texas Instruments. All other trademarks are the property of their respective owners.
11.5 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
11.6 Glossary
SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
www.ti.com 10-Nov-2025 PACKAGING INFORMATION Orderable part number Status (1) Material type (2) Package | Pins Package qty | Carrier RoHS (3) Lead finish/ Ball material (4) MSL rating/ Peak reflow (5) Op temp (°C) Part marking (6) LM2705MF-ADJ/NOPB Active Production SOT-23 (DBV) | 5 1000 | SMALL T&R Yes SN Level-1-260C-UNLIM -40 to 125 S59B LM2705MF-ADJ/NOPB.A Active Production SOT-23 (DBV) | 5 1000 | SMALL T&R Yes SN Level-1-260C-UNLIM -40 to 125 S59B LM2705MFX-ADJ/NOPB Active Production SOT-23 (DBV) | 5 3000 | LARGE T&R Yes Call TI | Sn Level-1-260C-UNLIM -40 to 125 S59B LM2705MFX-ADJ/NOPB.A Active Production SOT-23 (DBV) | 5 3000 | LARGE T&R Yes Call TI Level-1-260C-UNLIM -40 to 125 S59B (1) Status: For more details on status, see our product life cycle. (2) Material type: When designated, preproduction parts are prototypes/experimental devices, and are not yet approved or released for full production. Testing and final process, including without limitation quality assurance, reliability performance testing, and/or process qualification, may not yet be complete, and this item is subject to further changes or possible discontinuation. If available for ordering, purchases will be subject to an additional waiver at checkout, and are intended for early internal evaluation purposes only. These items are sold without warranties of any kind. (3) RoHS values: Yes, No, RoHS Exempt. See the TI RoHS Statement for additional information and value definition. (4) Lead finish/Ball material: Parts may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two lines if the finish value exceeds the maximum column width. (5) MSL rating/Peak reflow: The moisture sensitivity level ratings and peak solder (reflow) temperatures. In the event that a part has multiple moisture sensitivity ratings, only the lowest level per JEDEC standards is shown. Refer to the shipping label for the actual reflow temperature that will be used to mount the part to the printed circuit board. (6) Part marking: There may be an additional marking, which relates to the logo, the lot trace code information, or the environmental category of the part. Multiple part markings will be inside parentheses. Only one part marking contained in parentheses and separated by a "~" will appear on a part. If a line is indented then it is a continuation of the previous line and the two combined represent the entire part marking for that device. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. Addendum-Page 1
PACKAGE MATERIALS INFORMATION www.ti.com 5-Sep-2025 TAPE AND REEL INFORMATION Reel Width (W1) REEL DIMENSIONS A0B0K0WDimension designed to accommodate the component lengthDimension designed to accommodate the component thicknessOverall width of the carrier tapePitch between successive cavity centersDimension designed to accommodate the component width TAPE DIMENSIONSK0 P1B0WA0Cavity QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE Pocket QuadrantsSprocket HolesQ1Q1Q2Q2Q3Q3Q4Q4User Direction of Feed P1ReelDiameter *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Reel Diameter (mm) Reel Width W1 (mm) (mm) (mm) (mm) (mm) W (mm) Pin1 Quadrant Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION www.ti.com 5-Sep-2025 TAPE AND REEL BOX DIMENSIONS Width (mm) W LH *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) LM2705MF-ADJ/NOPB SOT-23 DBV 5 1000 210.0 185.0 35.0 LM2705MFX-ADJ/NOPB SOT-23 DBV 5 3000 210.0 185.0 35.0 Pack Materials-Page 2
www.ti.com PACKAGE OUTLINE C 0.22
0.08 TYP
0.25 3.0 2.6 2X 0.95 1.9 1.45 0.90 0.15
0.00 TYP
5X 0.5 0.3 0.6
0.3 TYP
0 TYP
1.9 (0.1) (0.15) 4X 0 -15 4X 4 -15 A 3.05 2.75 B1.75 1.45 (1.1) SOT-23 - 1.45 mm max heightDBV0005A SMALL OUTLINE TRANSISTOR 4214839/K 08/2024 NOTES: 1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing per ASME Y14.5M. 2. This drawing is subject to change without notice. 3. Refernce JEDEC MO-178. 4. Body dimensions do not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not exceed 0.25 mm per side. 5. Support pin may differ or may not be present.
0.2 C A B
0.1 C SCALE 4.000
www.ti.com EXAMPLE BOARD LAYOUT
0.07 MAX
0.07 MIN
5X (1.1) 5X (0.6) (2.6) (1.9) 2X (0.95) (R0.05) TYP 4214839/K 08/2024 SOT-23 - 1.45 mm max heightDBV0005A SMALL OUTLINE TRANSISTOR NOTES: (continued) 6. Publication IPC-7351 may have alternate designs. 7. Solder mask tolerances between and around signal pads can vary based on board fabrication site. SYMM LAND PATTERN EXAMPLE EXPOSED METAL SHOWN SCALE:15X PKG 3 4 SOLDER MASK OPENING METAL UNDER SOLDER MASK SOLDER MASK DEFINED EXPOSED METAL METALSOLDER MASK OPENING NON SOLDER MASK DEFINED (PREFERRED) SOLDER MASK DETAILS EXPOSED METAL
www.ti.com EXAMPLE STENCIL DESIGN (2.6) (1.9) 2X(0.95) 5X (1.1) 5X (0.6) (R0.05) TYP SOT-23 - 1.45 mm max heightDBV0005A SMALL OUTLINE TRANSISTOR 4214839/K 08/2024 NOTES: (continued) 8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate design recommendations. 9. Board assembly site may have different recommendations for stencil design. SOLDER PASTE EXAMPLE BASED ON 0.125 mm THICK STENCIL SCALE:15X SYMM PKG 3 4
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