LM2305A LEIDITECH

Document overview

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Technical content

A

Description

The LM2305A uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features

  • V DS = -12V,I D = -4.1A R DS(ON) < 60mΩ @ V GS =-2.5V R DS(ON) < 45mΩ @ V GS =-4.5V
  • High power and current handing capability
  • Lead free product is acquired
  • Surface mount package Application
  • PWM applications
  • Load switch
  • Power management D G S Schematic diagram Marking and pin Assignment SOT-23 top view Package Marking And Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 2305A LM2305A SOT-23 Ø180mm 8 mm 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS -12 V Gate-Source Voltage V GS ±12 V Drain Current -Continuous I D -4.1 A Drain Current -Pulsed (Note 1) I DM -15 A Maximum Power Dissipation P D 1.7 W Operating Junction and Storage Temperature Range T J STG -55 To 150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) R θJA 74 /W℃ Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics LCE P-Channel Enhancement Mode Power MOSFET Rev : 01.06.2014 /6 www.leiditech.com

Drain-Source Breakdown Voltage BV DSS V GS =0V I D Zero Gate Voltage Drain Current I DSS V DS =-20V,V GS =0V - - -1 μA Gate-Body Leakage Current I GSS V GS =±12V,V DS =0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS GS D V GS =-4.5V, I D =-4.1A - 29 45 Drain-Source On-State Resistance R DS(ON) V GS =-2.5V, I D =-3A - 40 60 mΩ Forward Transconductance g FS V DS =-5V,I D =-2A 5 - - S Dynamic Characteristics (Note4) Input Capacitance C lss - 740 - PF Output Capacitance C oss - 290 - PF Reverse Transfer Capacitance C rss V DS =-4V,V GS =0V, F=1.0MHz - 190 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 12 - nS Turn-on Rise Time t r - 35 - nS Turn-Off Delay Time t d(off) - 30 - nS Turn-Off Fall Time t f V DD =-4V,I D =-3.3A , R L =-1.2Ω,V GEN =-4.5V,R g =1Ω - 10 - nS Total Gate Charge Q g - 7.8 - nC Gate-Source Charge Q gs - 1.2 - nC Gate-Drain Charge Q gd V DS =-4V,I D =-4.1A,V GS =-4.5V - 1.6 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS =0V,I S =-1.6A - - -1.2 V Diode Forward Current (Note 2) I S - - 4.1 A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production A Rev : 01.06.2014 /6 www.leiditech.com LM2305

Symbol MIN. MAX. A 0.900 1.150 A1 0.000 0.100 A2 0.900 1.050 b 0.300 0.500 c 0.080 0.150 D 2.800 3.000 E 1.200 1.400 E1 2.250 2.550 e 0.950TYP e1 1.800 2.000 L 0.550REF L1 0.300 0.500 θ 0° 8° Notes 1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. A Shanghai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86- 021 50477059 Rev : 01.06.2014 6/6 www.leiditech.com LM2305