LM2102W LEIDITECH

Document overview

  • Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

  • VDS 20V
  • ID 2.5A
  • RDS(ON)( at VGS=4.5V) ＜70 mohm
  • RDS(ON)( at VGS=2.5V) ＜98 mohm General Description
  • Trench Power LV MOSFET technology
  • High Power and current handing capability

Applications

  • PWM application
  • Load switch ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage VDS 20 V Gate-source Voltage VGS ±10 V Drain Current TA=25℃ @ Steady State ID 2.5 A TA=70℃ @ Steady State 2.0 Pulsed Drain Current A IDM 14 A Total Power Dissipation @ TA=25℃ PD 0.7 W Thermal Resistance Junction-to-Ambient @ Steady State B RθJA 178 ℃/ W Junction and Storage Temperature Range TJ ,TSTG -55～+150 ℃ ■ Ordering Information (Example) PREFERED P/N PACKING CODE Marking MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE LM2102W F2 TS2 3000 7“ reel Enhancement Mode Field Effect Transistor N-Channel LM2102W Rev : www.leiditech.com 01.06.2018 1/5

■ Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units Static Parameter Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=250μA 20 V Zero Gate Voltage Drain Current IDSS VDS=20V,VGS=0V,TC=25℃ 1 μA Gate-Body Leakage Current IGSS VGS= ±10V, VDS=0V ±100 nA Gate Threshold Voltage VGS(th) VDS= VGS, ID=250μA 0.55 0.78 1.1 V Static Drain-Source On-Resistance RDS(ON) VGS= 4.5V, ID=2.5A 57 70 mΩ VGS= 2.5V, ID=2.0A 72 98 Diode Forward Voltage VSD IS=2.5A,VGS=0V 1.2 V Maximum Body-Diode Continuous Current IS 2.5 A Dynamic Parameters Input Capacitance Ciss VDS=10V,VGS=0V,f=1MHZ 280 pF Output Capacitance Coss 46 Reverse Transfer Capacitance Crss 29 Switching Parameters Total Gate Charge Qg VGS=4.5V,VDS=10V,ID=2.5A 2.9 nC Gate Source Charge Qgs 0.4 Gate Drain Charge Qgd 0.6 Turn-on Delay Time tD(on) VGS=4.5V,VDD=10V, RL=1.5Ω, RGEN=3Ω ns Turn-on Rise Time tr 54 Turn-off Delay Time tD(off) 18 Turn-off Fall Time tf 11 A. Pulse Test: Pulse Width≤300us,Duty cycle ≤2%. B. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. LM2102W Rev : www.leiditech.com 01.06.2018 2/5

■ Typical Performance Characteristics Figure1. Output Characteristics Figure2. Transfer Characteristics Figure3. Capacitance Characteristics Figure4. Gate Charge Figure5. Drain-Source on Resistance Figure6. Drain-Source on Resistance LM2102W Rev : www.leiditech.com 01.06.2018 3/5

Figure7. Safe Operation Area Figure8. Switching wave LM2102W Rev : www.leiditech.com 01.06.2018 4/5

■SOT-323 Package information ■SOT-323 Suggested Pad Layout LM2102W Shanghai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86- 021 50477059 Rev : www.leiditech.com 01.06.2018 5/5