LM1D06P03 LEIDITECH

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z Lead Free Product is Acquired z Surface Mount Package z P-Channel Switch with Low R DS (on) z Operated at Low Logic Level Gate Drive z ESD Protected Gate z Complementary to CJAA3134K MARKING: ABSOLUTE MAXIMUM RATINGS (T a =25℃ unless otherwise noted) 1.GATE 2.SOURCE 3.DRAIN Equivalent Circuit APPLICATION z Load/ Power Switching z I n t e r f a c i n g S w i t c h i n g z Battery Management for Ultra Small Portable Electronics z Logic Level Shift V (BR)DSS R DS(on) MAX I D 560mΩ@-4.5V -0.6A780 mΩ@-2.5V 950 mΩ(TYP)@-1.8V Parameter Symbol Value Unit Drain-Source Voltage V DS -25 V Typical Gate-Source Voltage V GS ±12 V Continuous Drain Current (note 1) I D -0.6 A Pulsed Drain Current (tp=10us) I DM -1.2 A Power Dissipation (note 2) P D 100 mW Thermal Resistance from Junction to Ambient (note 1) R θJA 1250 ℃/W Operation Junction and Storage Temperature Range ℃ TJ,TSTG -55~ 150 Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) T L 260 ℃ -25V LM1D06P03 Enhancement Mode Power MOSFET P-Channel DFN1006-3 Rev 2.0 : www.leiditech.com 12.01.2019 1/4

Notes : 1.Surface mounted on FR4 board using the minimum recommended pad size. 2. Pulse Test : Pulse width=300μs, duty cycle≤2%. 3. Switching characteristics are independent of operating junction temperatures. 4. Graranted by design，not subject to producting. MOSFET ELECTRICAL CHARACTERISTICS aT =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit STATIC PARAMETERS Drain-source breakdown voltage V (BR)DSS V GS = 0V, I D =-250µA -27 V Zero gate voltage drain current I DSS V DS =-20V,V GS = 0V -1 µA Gate-body leakage current I GSS V GS =±10V, V DS = 0V ±20 uA Gate threshold voltage (note 2) V GS(th) V DS GS , I D Drain-source on-resistance(note 2) R DS(on) V GS =-4.5V, I D =-1A 560 m Ω V GS =-2.5V, I D =-0.8A 780 m Ω V GS =-1.8V, I D =-0.5A 950 m Ω Forward tranconductance(note 2) g FS V DS =-10V, I D =-0.54A 1.2 S Diode forward voltage V SD I S =-0.5A, V GS = 0V -1.2 V DYNAMIC PARAMETERS(note 4) Input Capacitance C iss V DS =-16V,V GS =0V,f =1MHz 113 170 pF Output Capacitance C oss 15 25 pF Reverse Transfer Capacitance C rss 9 15 pF SWITCHING PARAMETERS (note 4) Turn-on delay time (note 3) t d(on) V DD =-4.5V,V GS =-10V, I D =-200mA,R GEN =10Ω 9 ns Turn-on rise time (note 3) t r 5.8 ns Turn-off delay time (note 3) t d(off) 32.7 ns Turn-off fall time (note 3) t f 20.3 ns 430 624 -25 Rev 2.0 : www.leiditech.com 12.01.2019 2/4 LM1D06P03

7\\SLFDO&KDUDFWHULVWLFV -0.01 -0.1 -0 -1 -2 -3 -4 -5 -0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 300 400 500 600 700 800 900 1000 1100 1200 -1 -2 -3 -4 -5 300 400 500 600 700 800 900 1000 -0 -1 -2 -3 -4 -0.0 -0.5 -1.0 -1.5 -2.0 -2.5 25 50 75 100 125 -0.0 -0.2 -0.4 -0.6 -0.8 T a =100 V SD I S — — T a =25 SOURCE CURRENT I S (A) SOURCE TO DRAIN VOLTAGE V SD (V) V GS =-4V,-5V V GS =-3V V GS =-2.5V V GS =-1.5V T a =25 Pulsed Output Characteristics V GS =-2V DRAIN CURRENT I D (A) DRAIN TO SOURCE VOLTAGE V DS (V) V GS =-4.5V T a =25 Pulsed ON-RESISTANCE R DS(ON) DRAIN CURRENT I D (A) I D ——R DS(ON) V GS =-1.8V V GS =-2.5V T a =25 T a =100 I D =-1A ON-RESISTANCE R DS(ON) GATE TO SOURCE VOLTAGE V GS (V) V GS ——R DS(ON) Pulsed Pulsed V DS =-3V Pulsed DRAIN CURRENT I D (A) GATE TO SOURCE VOLTAGE V GS (V) Transfer Characteristics T a =100 T a =25 I D =-250uA Threshold Voltage THRESHOLD VOLTAGE V TH (V) JUNCTION TEMPERATURE T J ( ) Rev 2.0 : www.leiditech.com 12.01.2019 3/4 LM1D06P03

DFN1006-3/g3/g51/g68/g70/g78/g68/g74/g72/g3/g50/g88/g87/g79/g76/g81/g72/g3/g39/g76/g80/g72/g81/g86/g76/g82/g81/g86/g3 Shanghai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86- 021 50477059 Rev 2.0 : www.leiditech.com 12.01.2019 4/4 LM1D06P03