LM1205 LEIDITECH

Document overview

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Technical content

Description

The LM1205 uses advanced trench technology to provide excellent R DS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features

  • N-Channel V DS =12V,I D =5A R DS(ON) <32mΩ @ V GS =4.5V R DS(ON) <42mΩ @ V GS =2.5V R DS(ON) < 80mΩ @ V GS =1.8V
  • P-Channel V DS = -12V,I D = -5A R DS(ON) <74mΩ @ V GS =-4.5V R DS(ON) <110mΩ @ V GS =-2.5V R DS(ON) < 220mΩ @ V GS =-1.8V
  • Load Switch for Portable Devices Pin assignment Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity

1205 LM1205 DFN2X2-6L - - -

Absolute Maximum Ratings (T A =25℃unless otherwise noted) Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage V DS 12 -12 V Gate-Source Voltage V GS ±12 ±12 V T A =25℃ 5 -5 Continuous Drain Current T A =70℃ I D 4.5 -3.8 A Pulsed Drain Current (Note 1) I DM 20 -15 A Maximum Power Dissipation T A =25℃ P D 1.9 1.9 W Operating Junction and Storage Temperature Range T J STG -55 To 150 -55 To 150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note2) R θJA N-Ch 65 /W℃ Thermal Resistance,Junction-to-Ambient (Note2) R θJA P-Ch 65 /W℃ N-channel P-channel LCE P-Channel Enhancement Mode Power MOSFET Rev : www.leiditech.com 01.06.2015

A =25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V I D =250μA 12 20 - V Zero Gate Voltage Drain Current I DSS V DS =12V,V GS =0V - - 1 μA Gate-Body Leakage Current I GSS V GS =±12V,V DS =0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS GS D =250μA 0.4 0.6 1 V V GS =4.5V, I D =5A - 28 32 mΩ V GS =2.5V, I D =4.6A - 36 42 mΩ Drain-Source On-State Resistance R DS(ON) V GS =1.8V, I D =4.1A - 55 80 mΩ Forward Transconductance g FS V DS =10V,I D =5A - 20 - S Dynamic Characteristics (Note4) Input Capacitance C lss - 495 - PF Output Capacitance C oss - 155 - PF Reverse Transfer Capacitance C rss V DS =6V,V GS =0V, F=1.0MHz - 95 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 7.0 - nS Turn-on Rise Time t r - 5.0 - nS Turn-Off Delay Time t d(off) - 18 - nS Turn-Off Fall Time t f V DD =6V, R L =1.2Ω V GS =10V,R GEN =4.5Ω - 6 - nS Total Gate Charge Q g - 6.6 - nC Gate-Source Charge Q gs - 1 - nC Gate-Drain Charge Q gd V DS =6V,I D =5A, V GS =4.5V - 1.2 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS =0V,I S =5A - - 1.2 V Rev : www.leiditech.com 01.06.2015 LM1205

A =25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V I D Zero Gate Voltage Drain Current I DSS V DS =-12V,V GS =0V - - -1 μA Gate-Body Leakage Current I GSS V GS =±12V,V DS =0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS GS D V GS =-4.5V, I D =-4.5A - 60 74 mΩ V GS =-2.5V, I D =-3.2A - 84 110 mΩ Drain-Source On-State Resistance R DS(ON) V GS =-1.8V, I D =-1A - 130 220 mΩ Forward Transconductance g FS V DS =-10V,I D =-5A - 10 - S Dynamic Characteristics (Note4) Input Capacitance C lss - 520 - PF Output Capacitance C oss - 100 - PF Reverse Transfer Capacitance C rss V DS =-6V,V GS =0V, F=1.0MHz - 65 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 7.5 - nS Turn-on Rise Time t r - 5.5 - nS Turn-Off Delay Time t d(off) - 19 - nS Turn-Off Fall Time t f V DD =-6V, R L =2.3Ω V GS =-10V,R GEN =6Ω - 7 - nS Total Gate Charge Q g - 9.2 - nC Gate-Source Charge Q gs - 1.6 - nC Gate-Drain Charge Q gd V DS =-6V,I D =-4.5A V GS =-4.5V - 2.2 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS =0V,I S =-5A - - -1.2 V Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2 . % 4. Guaranteed by design, not subject to production Rev : www.leiditech.com 01.06.2015 LM1205

Square Wave Pluse Duration(sec) Figure 13 Normalized Maximum Transient Thermal Impedance r(t),Normalized Effective Transient Thermal Im p edance Rev : www.leiditech.com 01.06.2015 LM1205

Shanghai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86- 021 50477059 Rev : www.leiditech.com 01.06.2015 LM1205