LM10110 LEIDITECH

Document overview

  • Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

Features

ID (at VGS=10V) 15A RDS(ON) (atVGS=10V) 110mΩ(Max) Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum Units Drain-SourceVoltage VDS 100 V Gate-SourceVoltage VGS ±20 V DrainCurrent-Continuous TC=25°C ID A TC=100°C ID 10.5 A DrainCurrent – Pulsed IDM A MaximumPower Dissipation PD W Single pulseavalancheenergy(1) EAS mJ JunctionandStorage TemperatureRange TJ,TSTG -55To 150 ℃ Thermal Characteristics Parameter Symbol Typ Max Unit ThermalResistancejunction-case RθJc 2.5 ℃ /W ThermalResistanceunction-to-Ambient RθJA 62 ℃ /W D G S D S G TO-252 LM10110 N-Channel Enhancement Mode Power MOSFET Rev : www.leiditech.com 01.06.2018

Electrical Characteristics (TJ=25℃ unless otherwise noted) Symbol Parameter Condition Min Typ Max Unit STATIC PARAMETERS BVDSS Drain-SourceBreakdown Voltage VGS=0VID=250μA 100 V IDSS ZeroGateVoltageDrain Current VDS=100V,VGS=0V 1 μA IGSS Gate-BodyLeakageCurrent VGS=±20V,VDS=0V ±100 nA VGS(th) GateThresholdVoltage VDS=VGS,ID=250μA 1.2 1.6 2.5 V RDS(ON) Drain-SourceOn-State Resistance VGS=10V, ID=10A 90 110 mΩ VGS=4.5V, ID=8A 100 125 mΩ DYNAMIC PARAMETERS Ciss InputCapacitance VDS=25V,VGS=0V, F=1.0MHz 1400 pF Coss OutputCapacitance 60 pF Crss ReverseTransferCapacitance 35 pF SWITCHING PARAMETERS td(on) Turn-onDelayTime VDD=50V,ID=1A, VGS=10V, RG=6Ω 18 nS tr Turn-onRiseTime 4 nS td(off) Turn-Off DelayTime 40 nS tf Turn-Off FallTime 3 nS Qg TotalGate Charge VDS=50V,ID=2A, VGS=10V 20 nC Qgs Gate-SourceCharge 3.2 nC Qgd Gate-DrainCharge 3.6 nC Rg Gateresistance VGS=0V,VDS=0V, F=1MHz 2 Ω VSD DiodeForwardVoltage VGS=0V,ISD=1A 0.7 1.2 V Note： 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=50V,VGS=10V,L=0.1mH,IAS=12A., Starting TJ=25℃ 3. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 4. Essentially independent of operating temperature. LM10110 Rev : www.leiditech.com 01.06.2018

ID , Continuous Drain Current (A) TC , Case Temperature (℃) Fig.1 Continuous Drain Current vs. TC TJ , Junction Temperature (℃) Fig.2 Normalized RDSON vs. TJ Normalized Gate Threshold Voltage (V) VGS , Gate to Source Voltage (V) TJ , Junction Temperature (℃) Fig.3 Normalized Vth vs. TJ Qg , Gate Charge (nC) Fig.4 Gate Charge Waveform Normalized Thermal Response (RθJC) Square Wave Pulse Duration (s) Fig.5 Normalized Transient Impedance ID , Continuous Drain Current (A) VDS , Drain to Source Voltage (V) Fig.6 Maximum Safe Operation Area TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Normalized On Resistance (m) LM10110 Rev : www.leiditech.com 01.06.2018

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% Fig.7 Switching Time Waveform Fig.8 Gate Charge Waveform LM10110 Rev : www.leiditech.com 01.06.2018

Symbol Dimensions In Millimeters Dimensions In Inches MAX MIN MAX MIN A 2.400 2.200 0.094 0.087 A1 1.110 0.910 0.044 0.036 A2 0.150 0.000 0.006 0.000 B 6.800 6.400 0.268 0.252 C 0.580 0.450 0.023 0.018 C1 0.580 0.460 0.023 0.018 D 5.500 5.100 0.217 0.201 E 2.386 2.186 0.094 0.086 F 1.140 0.600 0.045 0.024 F1 0.880 0.500 0.035 0.020 L 10.400 9.400 0.409 0.370 L1 3.000 2.400 0.118 0.094 L2 6.223 5.400 0.245 0.213 L3 1.200 0.600 0.047 0.024 θ 9° 3° 9° 3° TO252 PACKAGE INFORMATION LM10110 Shanghai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86- 021 50477059 Rev : www.leiditech.com 01.06.2018