LM0708 LEIDITECH

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Features

ID (at VGS=10V) 80A RDS(ON) (atVGS=10V) 7mΩ(Typ) Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum Units Drain-SourceVoltage VDS V Gate-SourceVoltage VGS ±25 V DrainCurrent-Continuous TC=25°C ID A TC=100°C ID A DrainCurrent – Pulsed IDM 360 A MaximumPower Dissipation PD 176 W Single pulseavalancheenergy(1) EAS 480 mJ JunctionandStorage TemperatureRange TJ,TSTG -55To 150 ℃ Thermal Characteristics Parameter Symbol Typ Max Unit ThermalResistancejunction-case RθJc 1.1 ℃ /W ThermalResistanceunction-to-Ambient RθJA 62 ℃ /W D G S G D S TO220 S D G TO263 100% UIS TESTED! 100% ∆Vds TESTED! LM0708 Super Trench Power MOSFET N-Channel Rev : www.leiditech.com 01.06.2018 1/6

Electrical Characteristics (TJ=25℃ unless otherwise noted) Symbol Parameter Condition Min Typ Max Unit STATIC PARAMETERS BVDSS Drain-SourceBreakdown Voltage VGS=0VID=250μA V IDSS ZeroGate VoltageDrainCurrent VDS=70V,VGS=0V 1 μA IGSS Gate-BodyLeakageCurrent VGS=±25V,VDS=0V ±100 nA VGS(th) Gate ThresholdVoltage VDS=VGS,ID=250μA 2.0 3.0 4.0 V RDS(ON) Drain-Source On-State Resistance VGS=10V, ID=20A 7 8 mΩ DYNAMIC PARAMETERS Ciss Input Capacitance VDS=30V,VGS=0V, F=1.0MHz 3000 pF Coss OutputCapacitance 350 pF Crss ReverseTransferCapacitance 190 pF SWITCHING PARAMETERS td(on) Turn-on DelayTime VDD=40V,ID=1A, VGS=10V, RG=6Ω 14 nS tr Turn-on RiseTime 15 nS td(off) Turn-Off DelayTime 28 nS tf Turn-Off FallTime 50 nS Qg Total GateCharge VDS=50V,ID=10A, VGS=10V 65 nC Qgs Gate-SourceCharge 12 nC Qgd Gate-DrainCharge 20 nC VSD Diode Forward Voltage VGS=0V,ISD=10A 0.72 1.4 V Rg Gateresistance VGS=0V,VDS=0V, F=1MHz 1.45 Ω Note： 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=48V,VGS=10V,L=0.5mH,IAS=35A, Starting TJ=25℃ 3. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 4. Essentially independent of operating temperature. Rev : www.leiditech.com 01.06.2018 2/6 LM0708

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ID , Continuous Drain Current (A) TC , Case Temperature (℃) Fig.1 Continuous Drain Current vs. TC TJ , Junction Temperature (℃) Fig.3 Normalized Vth vs. TJ Normalized Gate Threshold V oltage (V) Qg , Gate Charge (nC) Fig.4 Gate Charge Characteristics VGS , Gate to Source V oltage (V) Square Wave Pulse Duration (s) Fig.5 Normalized Transient Impedance VDS , Drain to Source Voltage (V) Fig.6 Maximum Safe Operation Area Normalized Thermal Response (RθJC) ID , Drain Current (A) TJ , Junction Temperature (℃) Fig.2 Normaliz ed RDSON vs. TJ Normalized On Resistance (m) Rev : www.leiditech.com 01.06.2018 3/6 LM0708

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% Fig.7 Switching Time Waveform Fig.8 Gate Charge Waveform Rev : www.leiditech.com 01.06.2018 4/6 LM0708

Symbol Dimensions In Millimeters Dimensions In Inches MAX MIN MAX MIN A 10.300 9.700 0.406 0.382 A1 8.840 8.440 0.348 0.332 A2 1.250 1.050 0.049 0.041 A3 5.300 5.100 0.209 0.201 B 16.200 15.400 0.638 0.606 C 4.680 4.280 0.184 0.169 C1 1.500 1.100 0.059 0.043 D 1.000 0.600 0.039 0.024 E 3.800 3.400 0.150 0.134 G 9.300 8.700 0.366 0.343 H 0.600 0.400 0.024 0.016 K 2.700 2.100 0.106 0.083 L 13.600 12.800 0.535 0.504 M 1.500 1.100 0.059 0.043 N 2.590 2.490 0.102 0.098 T W0.35 W0.014 TO220 PACKAGE INFORMATION Rev : www.leiditech.com 01.06.2018 5/6 LM0708

Min. Max. Min. Max. A 4.470 4.670 0.176 0.184 A1 0.000 0.150 0.000 0.006 B 1.120 1.420 0.044 0.056 b 0.710 0.910 0.028 0.036 b1 1.170 1.370 0.046 0.054 c 0.310 0.530 0.012 0.021 c1 1.170 1.370 0.046 0.054 D 10.010 10.310 0.394 0.406 E 8.500 8.900 0.335 0.350 e e1 4.980 5.180 0.196 0.204 L 14.940 15.500 0.588 0.610 L1 4.950 5.450 0.195 0.215 L2 2.340 2.740 0.092 0.108 L3 1.300 1.700 0.051 0.067 Φ 0° 8° 0° 8° V 5.600 REF. 0.220 REF. Symbol Dimensions In Millimeters Dimensions In Inches 2.540 TYP. 0.100 TYP. TO263 PACKAGE INFORMATION Shanghai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86- 021 50477059 Rev : www.leiditech.com 01.06.2018 6/6 LM0708