LM04N10A LEIDITECH

Document overview

  • Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

  • VDS 100V
  • ID 4A
  • RDS(ON)( at VGS=10V) ＜110 mohm
  • RDS(ON)( at VGS=4.5V) ＜120 mohm General Description
  • Trench Power MV MOSFET technology
  • Excellent package for heat dissipation
  • High density cell design for low RDS(ON)

Applications

  • DC-DC Converters
  • Power management functions ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage VDS 100 V Gate-source Voltage VGS ±20 V Drain Current TA=25℃ ID 4.0 A TA=70℃ 3.2 Pulsed Drain Current A IDM 16 A Total Power Dissipation @ TA=25℃ PD 2.5 W Thermal Resistance Junction-to-Ambient B RθJA 50 ℃/ W Thermal Resistance Junction-to-Case RθJC 16 ℃/ W Junction and Storage Temperature Range TJ ,TSTG -55～+150 ℃ ■ Ordering Information (Example) PREFERED P/N PACKING CODE Marking MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE LM04N10A F2 1004 2500 5000 40000 13“ reel LM04N10A N-Channel Enhancement Mode Power MOSFET Rev : www.leiditech.com 01.06.2018

■ Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units Static Parameter Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=250μA 100 V Zero Gate Voltage Drain Current IDSS VDS=100V,VGS=0V 1 μA Gate-Body Leakage Current IGSS VGS= ±20V, VDS=0V ±100 nA Gate Threshold Voltage VGS(th) VDS= VGS, ID=250μA 1.1 1.8 3.0 V Static Drain-Source On-Resistance RDS(ON) VGS= 10V, ID=4A 95 110 mΩ VGS= 4.5V, ID=3.2A 100 120 Diode Forward Voltage VSD IS=4A,VGS=0V 0.8 1.2 V Maximum Body-Diode Continuous Current IS 4 A Dynamic Parameters Input Capacitance Ciss VDS=50V,VGS=0V,f=1MHZ 800 pF Output Capacitance Coss 40 Reverse Transfer Capacitance Crss 32 Switching Parameters Total Gate Charge Qg VGS=10V,VDS=50V,ID=4A nC Gate-Source Charge Qgs 2.5 Gate-Drain Charge Qgd 2.6 Turn-on Delay Time tD(on) VGS=10V,VDD=50V,RL=6.4Ω RGEN=3Ω ns Turn-on Rise Time tr 41 Turn-off Delay Time tD(off) 25 Turn-off fall Time tf 8 A. Pulse Test: Pulse Width≤300us,Duty cycle ≤2%. B. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design, while RθJA is determined by the board design. The maximum rating presented here is based on mounting on a 1 in 2 pad of 2oz copper. LM04N10A Rev : www.leiditech.com 01.06.2018

■ Typical Performance Characteristics Figure1. Output Characteristics Figure2. Transfer Characteristics Figure3. Capacitance Characteristics Figure4. Gate Charge Figure5. Drain-Source on Resistance Figure6. Drain-Source on Resistance LM04N10A Rev : www.leiditech.com 01.06.2018

Figure7. Safe Operation Area Figure8. Switching wave LM04N10A Rev : www.leiditech.com 01.06.2018

■ SOT-223 Package information LM04N10A Shanghai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86- 021 50477059 Rev : www.leiditech.com 01.06.2018