LM02N10A LEIDITECH

Document overview

  • Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

  • VDS 100V
  • ID 2.0A
  • RDS(ON)( at VGS=10V) ＜280 mohm
  • RDS(ON)( at VGS=4.5V) ＜310 mohm General Description
  • Trench Power MV MOSFET technology
  • Excellent package for heat dissipation
  • High density cell design for low RDS(ON)
  • MSL LEVEL1

Applications

  • DC-DC Converters
  • Power management functions ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage VDS 100 V Gate-source Voltage VGS ±20 V Drain Current TA=25℃ ID 2.0 A TA=70℃ 1.6 Pulsed Drain Current A IDM 8 A Total Power Dissipation @ TA=25℃ PD 1.2 W Thermal Resistance Junction-to-Ambient B RθJA 105 ℃/ W Junction and Storage Temperature Range TJ ,TSTG -55～+150 ℃ ■ Ordering Information (Example) PREFERED P/N PACKING CODE Marking MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE LM02N10A F2 1002. 3000 30000 7“ reel LM02N10A Enhancement Mode Power MOSFET N-Channel Rev : www.leiditech.com 01.06.2018 1/5

■ Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units Static Parameter Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=250μA 100 V Zero Gate Voltage Drain Current IDSS VDS=100V,VGS=0V 1 μA Gate-Body Leakage Current IGSS1 VGS= ±20V, VDS=0V ±100 nA IGSS2 VGS= ±10V, VDS=0V ±50 nA Gate Threshold Voltage VGS(th) VDS= VGS, ID=250μA 1.1 1.8 3.0 V Static Drain-Source On-Resistance RDS(ON) VGS= 10V, ID=2.0A 250 280 mΩ VGS= 4.5V, ID=2.0A 260 310 Diode Forward Voltage VSD IS=2A,VGS=0V 0.8 1.2 V Maximum Body-Diode Continuous Current IS 2.0 A Dynamic Parameters Input Capacitance Ciss VDS=50V,VGS=0V,f=1MHZ 330 pF Output Capacitance Coss 88 Reverse Transfer Capacitance Crss 17 Switching Parameters Total Gate Charge Qg VGS=10V,VDS=50V,ID=2.0A 5.3 nC Gate-Source Charge Qgs 1.4 Gate-Drain Charge Qgd 1.8 Turn-on Delay Time tD(on) VGS=10V,VDD=50V, ID=1.3A,RL=39Ω RGEN=1Ω ns Turn-on Rise Time tr 54 Turn-off Delay Time tD(off) 18 Turn-off fall Time tf 11 A. Pulse Test: Pulse Width≤300us,Duty cycle ≤2%. B. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. LM02N10A Rev : www.leiditech.com 01.06.2018 2/5

■ Typical Performance Characteristics Figure1. Output Characteristics Figure2. Transfer Characteristics Figure3. Capacitance Characteristics Figure4. Gate Charge Figure5. Drain-Source on Resistance Figure6. Drain-Source on Resistance LM02N10A Rev : www.leiditech.com 01.06.2018 3/5

Figure7. Safe Operation Area Figure8. Switching wave LM02N10A Rev : www.leiditech.com 01.06.2018 4/5

■ SOT-23 Package information ■ SOT-23 Suggested Pad Layout LM02N10A Shanghai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86- 021 50477059 Rev : www.leiditech.com 01.06.2018 5/5