LM0010-6L LEIDITECH

Document overview

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Technical content

The LM0010-6L is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. The PL0010-6L has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low R DS(ON) and fast switching speed. Powered System DC/DC Converter Load Switch

FEATURES

100V/3A,R DS(ON) = 310mΩ@V GS = 10V High density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-6L package design PART MARKING PIN CONFIGURATION(SOT-23-6L) LM0010-6L N-Channel Enhancement Mode MOSFET Rev : www.leiditech.com 01.06.2018 1/3

1 D Drain

2 D Drain

3 G Gate

4 S Source

5 D Drain

6 D Drain

ORDERING INFORMATION

Part Number Package Part Marking LM0010-6L SOT-23-6L M10K MK ※ LM0010-6L : Tape Reel ; Pb – Free ; Halogen – Free ABSOULTE MAXIMUM RATINGS (T A =25 Unless otherwise℃ noted) Parameter Symbol Typical Unit Drain-Source V oltage V DSS 100 V Gate –Source V oltage V GSS ±20 V Continuous Drain Current(T J =150 )℃ T A =25℃ I D 3.0 A T A =70℃ 2.0 Pulsed Drain Current I DM 10 A Power Dissipation T A =25℃ P D 1.25 W T A =70℃ 0.8 Operating Junction Temperature T J -55/150 ℃ Storage Temperature Range T STG -55/150 ℃ Thermal Resistance-Junction to Ambient R θJA 100 ℃/W LM0010-6L Rev : www.leiditech.com 01.06.2018 2/3

ELECTRICAL CHARACTERISTICS (T A =25 Unless otherwise noted)℃ Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown V oltage V (BR)DSS V GS =0V ,I D =250uA 100 V Gate Threshold V oltage V GS(th) V DS GS D =250uA 1 2.0 2.5 Gate Leakage Current I GSS V DS =0V ,V GS =±20V ±100 nA Zero Gate V oltage Drain Current I DSS V DS =80V ,V GS =0V 1 uA V DS =80V ,V GS =0V T J =125℃ 5 On-State Drain Current I D(on) V DS ≥5V ,V GS =10V 3.0 A Drain-Source On-Resistance R DS(on) V GS = 10V ,I D =3A 0.26 0.31 Ω Forward Transconductance gfs V DS =10V ,I D =3A 2.4 S Diode Forward V oltage V SD I S =1A,V GS =0V 1.2 V Dynamic Total Gate Charge Q g V DS =80V ,V GS =10V I D = 5A 9 13 nC Gate-Source Charge Q gs Gate-Drain Charge Q gd 1.4 Input Capacitance C iss V DS =25,V GS =0V f=1MHz 508 pF Output Capacitance C oss Reverse Transfer Capacitance C rss 16.5 Turn-On Time t d(on) V DD =50V ,R L =10Ω I D =3A,V GEN =10V R G =3.3Ω nS t r 21.5 Turn-Off Time t d(off) 11.2 t f 18.8 LM0010-6L Shanghai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86- 021 50477059 Rev : www.leiditech.com 01.06.2018 3/3