LH8550QLT1G LEIDITECH

Document overview

  • Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Rev : www.leiditech.com 01.06.2021 1/4 FEA TURES

  • We declare that the material of product compliance with RoHS requirements and Halogen Free.
  • S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.
  • High current capacity in compact package. IC =-1.5A.
  • Epitaxial planar type.
  • Pb-Free Package is available. DEVICE MARKING AND ORDERING INFORMATION MAXIMUM RATINGS(Ta = 25 ) Collector current THERMAL CHARACTERISTICS Total Power Dissipation Junction and Storage temperature LH8550QLT3G KIY 10000/Tape&Reel PD 225 mW TJ,Tstg −55 ∼+150 ℃ VCollector-Base voltage VCBO Device Marking Shipping Parameter Symbol Limits Unit Collector-Emitter Voltage VCEO -50 V LH8550QLT1G KIY 3000/Tape&Reel -50 mA Emitter-Base Voltage VEBO -6 Parameter Symbol Limits Unit V IC -1500 SOT23 BASE EMITTER COLLECTOR ºC E LECTRICAL CHARACTERISTICS (Ta= 25ºC) Collector-Emitter Breakdown Voltage (IC =-2.0mA,IB =0) Emitter-Base Breakdown Voltage (IE = -100µA,IC=0) Collector-Base Breakdown voltage (IC = -100µA,IE=0) Collector Cutoff Current (VCB = -35 V,IE=0) Emitter Cutoff Current (VEB = -6V,IC=0) Base-Emitter Voltage (VCE =-1V,IC =-10mA) DC Current Gain (IC =-100mA, VCE =-1V) (IC=-800mA, VCE =-1V) Collector-Emitter Saturation Voltage (IC =-800mA, IB =-80mA) Characteristic VBE V - -0.66 -1 HFE 40 - - Symbol Min. Typ. ICBO nA - - -100 V(BR)EBO V -6 - -50 - V(BR)CBO V 160 - 320 VCE(S) IEBO nA - - -100 V - - -0.5 Unit V(BR)CEO V -50 - - Max.

Rev : www.leiditech.com 01.06.2021 2/4 0.0 0.4 0.8 1.2 1.6 2.0 0.02 0.2 2 20 VCE Collector to Emittor Voltage(V) IB Base Current(mA) IC=200mA IC=150mA IC=100mA IC=50mA IC=40mA IC=30mA IC=20mA IC=10mA 0.2 0.4 0.6 0.8 1.0 1.2 0.0002 0.02 2 VB E(on) (V) IC Coll ector Current(A) VCE=1.0V 150℃ 100℃ 25℃ -25℃ -55℃ 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 1 2 3 4 5 IC Co llector Current(A) VCE Collector to Emittor Voltage(V) IB=1mA IB=2mA IB=3mA IB=4mA IB=5mA IB=6mA 100 200 300 400 500 0.0002 0.002 0.02 0.2 2 HFE Dc Gain IC Coll ector Current(A) VCE=1.0V 150℃ 100℃ 25℃ -25℃ -55℃ IC vs. VCE VCE vs. IB HFE vs. IC VBE(on) vs. IC ELECTRICAL CHARACTERISTICS CURVES

Rev : www.leiditech.com 01.06.2021 3/4 0.1 1 10 100 Cap acitance(pF) VR Reverse Voltage(V) f=1.0MHz Ta=25℃ Cibo Cobo 0.1 0.2 0.3 0.4 0.5 0.6 0.001 0.01 0.1 1 10 VCE (sat) (V) IC Coll ector Current(A) IC/IB=10 150℃ 100℃ 25℃ -25℃,-55℃ 0.2 0.4 0.6 0.8 1.0 1.2 0.0002 0.002 0.02 0.2 2 VB E(sat) (V) IC Col lector Current(A) IC/IB=10 150℃ 100℃ 25℃ -25℃ -55℃ VBE(sat) vs. IC VCE(sat) vs. IC Capacitance

Rev : www.leiditech.com 4/4 LH8550QLT1G 01.06.2021 SOT-23 OUT LINE AND DIMENSIONS Notes: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. SOLDERING FOOTPRINT e L 0.114 MIN NOM 1.20 0.051 0.89 1 0.005 0.007 2.9 3.04 1.3 1.4 c 2.80 0.047 0.11 A 1.11 0.035 0.04 0.044 0.12 MAX MIN 0.055 0.09 b 0.37 E D 0.004 0.13 0.18 0.003 DIM INCHESMILLIMETERS MAXNOM Shangh ai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86- 021 50477059