LCE6003M LEIDITECH

Document overview

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Technical content

Description

The LCE6003M uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. General Feature

  • V DS =60V,I D =3.0A R DS(ON) <100mΩ @ V GS =10V R DS(ON) < 120mΩ @ V GS =4.5V
  • High Power and current handing capability
  • Lead free product is acquired
  • Surface mount package Application
  • Battery switch
  • DC/DC converter D G S Schematic diagram SOT-89 -3L top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 6003M NCE6003M SOT-89-3L Ø180mm 12mm 1000units Absolute Maximum Ratings (T A =25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 60 V Gate-Source Voltage V GS ±20 V Drain Current-Continuous I D 3 A Drain Current-Pulsed (Note 1) I DM 10 A Maximum Power Dissipation P D 1.7 W Operating Junction and Storage Temperature Range T J STG -55 To 150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) R θJA 73.5 /W℃ Electrical Characteristics (T A =25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V I D =250μA 60 65 - V Zero Gate Voltage Drain Current I DSS V DS =60V,V GS =0V - - 1 μA LCE6003M LCE N-Channel Enhancement Mode Power MOSFET Rev : www.leiditech.com 01.06.2018

Parameter Symbol Condition Min Typ Max Unit Gate-Body Leakage Current I GSS V GS =±20V,V DS =0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS GS D =250μA 1 1.2 2.0 V V GS =10V, I D =3A - 73 100 m Ω Drain-Source On-State Resistance R DS(ON) V GS =4.5V, I D =3A - - 120 m Ω Forward Transconductance g FS V DS =15V,I D =2A 2 - - S Dynamic Characteristics (Note4) Input Capacitance C lss - 247 - PF Output Capacitance C oss - 34 - PF Reverse Transfer Capacitance C rss V DS =30V,V GS =0V, F=1.0MHz - 19.5 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 6 - nS Turn-on Rise Time t r - 15 - nS Turn-Off Delay Time t d(off) - 15 - nS Turn-Off Fall Time t f V DD =30V,I D =1.5A V GS =10V,R GEN =1Ω - 10 - nS Total Gate Charge Q g - 6 - nC Gate-Source Charge Q gs - 1 - nC Gate-Drain Charge Q gd V DS =30V,I D =3A, V GS =4.5V - 1.3 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS =0V,I S =3A - - 1.2 V Diode Forward Current (Note 2) I S - - 3 A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production LCE6003M Rev : www.leiditech.com 01.06.2018

  1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. LCE6003M Shanghai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86- 021 50477059 Rev : www.leiditech.com 01.06.2018