LCE4953 LEIDITECH

Document overview

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Technical content

Description

The LCE4953 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. General Features

  • V DS = -30V,I D = -5.1A R DS(ON) < 90mΩ @ V GS =-4.5V R DS(ON) < 55mΩ @ V GS =-10V
  • High Power and current handing capability
  • Lead free product is acquired
  • Surface Mount Package Application
  • PWM applications
  • Load switch
  • Power management D1 D2 S1 S2 Schematic diagram SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity

4953 LCE4953 SOP-8 Ø330mm 12mm 2500 units

Absolute Maximum Ratings (T A =25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS -30 V Gate-Source Voltage V GS ±20 V Drain Current-Continuous I D -5.1 A Drain Current-Pulsed (Note 1) I DM -20 A Maximum Power Dissipation P D 2.5 W Operating Junction and Storage Temperature Range T J STG -55 To 150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) R θJA 50 /W℃ Electrical Characteristics (T A =25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V I D Zero Gate Voltage Drain Current I DSS V DS =-24V,V GS =0V - - -1 μA P-Channel Enhancement Mode Power MOSFET Rev : www.leiditech.com 01.06.2017 1/6

Gate-Body Leakage Current I GSS V GS =±20V,V DS =0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS GS D V GS =-10V, I D =-5.1A - 43 55 mΩ Drain-Source On-State Resistance R DS(ON) V GS =-4.5V, I D =-4.2A - 62 90 mΩ Forward Transconductance g FS V DS =-15V,I D =-4.5A 4 7 - S Dynamic Characteristics (Note4) Input Capacitance C lss - 520 - PF Output Capacitance C oss - 130 - PF Reverse Transfer Capacitance C rss V DS =-15V,V GS =0V, F=1.0MHz - 70 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 7 - nS Turn-on Rise Time t r - 13 - nS Turn-Off Delay Time t d(off) - 14 - nS Turn-Off Fall Time t f V DD =-15V, ID=-1A, V GS =-10V,R GEN =6Ω - 9 - nS Total Gate Charge Q g - 11 - nC Gate-Source Charge Q gs - 2.2 - nC Gate-Drain Charge Q gd V DS =-15V,I D =-5.1A,V GS =-10V - 3 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS =0V,I S =-5.1A - - -1.2 V Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production LCE4953 Rev : www.leiditech.com 01.06.2017 2/6

Dimensions In Millimeters Dimensions In Inches Symbol Min. Max. Min. Max. A 1.350 1.750 0.053 0.069 A1 0.100 0.250 0.004 0.010 A2 1.350 1.550 0.053 0.061 b 0.330 0.510 0.013 0.020 c 0.170 0.250 0.006 0.010 D 4.700 5.100 0.185 0.200 E 3.800 4.000 0.150 0.157 E1 5.800 6.200 0.228 0.244 e 1.270(BSC) 0.050(BSC) L 0.400 1.270 0.016 0.050 θ 0° 8° 0° 8° LCE4953 Shanghai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86- 021 50477059 Rev : www.leiditech.com 01.06.2017 6/6