LCE3010S LEIDITECH

Document overview

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Technical content

Description

The LCE3010S uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications. General Features

  • V DS =30V,I D =10A R DS(ON) < 12mΩ @ V GS =10V R DS(ON) <16mΩ @ V GS =4.5V
  • High density cell design for ultra low Rdson
  • Fully characterized Avalanche voltage and current Application
  • Power switching application
  • Hard Switched and High Frequency Circuits
  • Uninterruptible Power Supply Schematic diagram Marking and pin assignment SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity

3010 LCE3010S SOP-8 Ø330mm 12mm 2500 units

Absolute Maximum Ratings (T A =25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 30 V Gate-Source Voltage V GS ±20 V Drain Current-Continuous I D 10 A Drain Current-Continuous(T C =100℃) I D (100℃) 6 A Pulsed Drain Current I DM 50 A Maximum Power Dissipation P D 2.5 W Operating Junction and Storage Temperature Range T J STG -55 To 150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Case (Note 2) R θJC 50 /W℃ LCE N-Channel Enhancement Mode Power MOSFET Rev : www.leiditech.com 01.06.2014

Electrical Characteristics (T A =25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V I D =250μA 30 33 - V Zero Gate Voltage Drain Current I DSS V DS =30V,V GS =0V - - 1 μA Gate-Body Leakage Current I GSS V GS =±20V,V DS =0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS GS D =250μA 1 1.6 3 V V GS =10V, I D =10A - 8 12 Drain-Source On-State Resistance R DS(ON) V GS =4.5V, I D =5A - 11 16 mΩ Forward Transconductance g FS V DS =5V,I D =10A 15 - - S Dynamic Characteristics (Note4) Input Capacitance C lss - 1550 - PF Output Capacitance C oss - 300 - PF Reverse Transfer Capacitance C rss V DS =15V,V GS =0V, F=1.0MHz - 180 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 30 - nS Turn-on Rise Time t r - 20 - nS Turn-Off Delay Time t d(off) - 100 - nS Turn-Off Fall Time t f V DD =25V,I D =1A V GS =10V,R GEN =6Ω - 80 - nS Total Gate Charge Q g - 13 - nC Gate-Source Charge Q gs - 5.5 - nC Gate-Drain Charge Q gd V DS =15V,I D =10A, V GS =5V - 3.5 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS =0V,I S =10A - - 1.2 V Diode Forward Current (Note 2) I S - - 10 A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production LCE3010S Rev : www.leiditech.com 01.06.2014

1) E AS Test Circuits 2) Gate Charge Test Circuit: 3) Switch Time Test Circuit： LCE3010S Rev : www.leiditech.com 01.06.2014

Dimensions In Millimeters Dimensions In Inches Symbol Min. Max. Min. Max. A 1.350 1.750 0.053 0.069 A1 0.100 0.250 0.004 0.010 A2 1.350 1.550 0.053 0.061 b 0.330 0.510 0.013 0.020 c 0.170 0.250 0.006 0.010 D 4.700 5.100 0.185 0.200 E 3.800 4.000 0.150 0.157 E1 5.800 6.200 0.228 0.244 e 1.270(BSC) 0.050(BSC) L 0.400 1.270 0.016 0.050 θ 0° 8° 0° 8° LCE3010S Shanghai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86- 021 50477059 Rev : www.leiditech.com 01.06.2014