LCE2301 LEIDITECH
Document overview
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Technical content
The LCE2301 uses advanced trench technology to provide Enhancement Mode Power MOSFET
Description
DS(ON) , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features
- V DS = -20V,I D = -3A R DS(ON) < 140mΩ @ V GS =-2.5V R DS(ON) < 110mΩ @ V GS =-4.5V
- High power and current handing capability
- Lead free product is acquired
- Surface mount package Application
- PWM applications
- Load switch
- Power management Schematic diagram Marking and pin assignment SOT-23 top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity
2301 SOT-23 Ø180mm 8 mm 3000 units
Absolute Maximum Ratings (T A =25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS -20 V Gate-Source Voltage V GS ±12 V Drain Current-Continuous I D -3 A Drain Current -Pulsed (Note 1) I DM -10 A Maximum Power Dissipation P D 1 W Operating Junction and Storage Temperature Range T J STG -55 To 150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) R θJA 125 /W℃ Electrical Characteristics (T A =25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V I D Zero Gate Voltage Drain Current I DSS V DS =-20V,V GS =0V - - -1 μA LCE2301 Rev : 01.06.2014 1/6 www.leiditech.com
Parameter Symbol Condition Min Typ Max Unit Gate-Body Leakage Current I GSS V GS =±12V,V DS =0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS GS D V GS =-4.5V, I D =-3A - 64 110 mΩ Drain-Source On-State Resistance R DS(ON) V GS =-2.5V, I D =-2A - 89 140 mΩ Forward Transconductance g FS V DS =-5V,I D =-2A 5 - - S Dynamic Characteristics (Note4) Input Capacitance C lss - 405 - PF Output Capacitance C oss - 75 - PF Reverse Transfer Capacitance C rss V DS =-10V,V GS =0V, F=1.0MHz - 55 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 11 - nS Turn-on Rise Time t r - 35 - nS Turn-Off Delay Time t d(off) - 30 - nS Turn-Off Fall Time t f V DD =-10V,I D =-1A V GS =-4.5V,R GEN =10Ω - 10 - nS Total Gate Charge Q g - 3.3 12 nC Gate-Source Charge Q gs - 0.7 - nC Gate-Drain Charge Q gd V DS =-10V,I D =-3A, V GS =-2.5V - 1.3 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS =0V,I S =1.3A - - -1.2 V Diode Forward Current (Note 2) I S - - -3 A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2 . % 4. Guaranteed by design, not subject to production LCE2301 Rev : 01.06.2014 2/6 www.leiditech.com
- All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. Dimensions in Millimeters Symbol MIN. MAX. A 0.900 1.150 A1 0.000 0.100 A2 0.900 1.050 b 0.300 0.500 c 0.080 0.150 D 2.800 3.000 E 1.200 1.400 E1 2.250 2.550 e 0.950TYP e1 1.800 2.000 L 0.550REF L1 0.300 0.500 θ 0° 8° LCE2301 Shanghai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86- 021 50477059 Rev : 01.06.2014 6/6 www.leiditech.com