LCE20P45Q LEIDITECH

Document overview

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Technical content

Description

The LCE20P45Q uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications. General Features

  • V DS =-19V,I D =-45A R DS(ON) < 7mΩ @ V GS =-4.5V R DS(ON) < 9mΩ @ V GS =-2.5V R DS(ON) < 12mΩ @ V GS =-1.8V
  • High density cell design for ultra low Rdson
  • Fully characterized avalanche voltage and current
  • Good stability and uniformity with high E AS
  • Excellent package for good heat dissipation Application
  • Load switch
  • Battery protection Schematic diagram Pin Assignment Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity NCE20P45Q LCE20P45Q DFN 3.3x3.3 EP - - - Absolute Maximum Ratings (T C =25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS -19 V Gate-Source Voltage V GS ±12 V Drain Current-Continuous I D -45 A Drain Current-Continuous(T C =100℃) I D (100℃) -35 A Pulsed Drain Current I DM -200 A Maximum Power Dissipation P D 80 W Derating factor

0.64 W/ ℃

Operating Junction and Storage Temperature Range T J STG -55 To 150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Case (Note 2) R θJC 1.6 /W℃ LCE P-Channel Enhancement Mode Power MOSFET Rev : www.leiditech.com 01.06.2014

Electrical Characteristics (T C =25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V I D =-250μA -19 - - V Zero Gate Voltage Drain Current I DSS V DS =-16V,V GS =0V - - 1 μA Gate-Body Leakage Current I GSS V GS =±12V,V DS =0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS GS D V GS =-4.5V, I D =-20A - 5.8 7 V GS =-2.5V, I D =-20A - 7.2 9 Drain-Source On-State Resistance R DS(ON) V GS =-1.8V, I D =-20A 9 12 mΩ Forward Transconductance g FS V DS =-5V,I D =-20A 80 - - S Dynamic Characteristics (Note4) Input Capacitance C lss - 3500 - PF Output Capacitance C oss - 577 - PF Reverse Transfer Capacitance C rss V DS =-10V,V GS =0V, F=1.0MHz - 445 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 18 - nS Turn-on Rise Time t r - 42 - nS Turn-Off Delay Time t d(off) - 85 - nS Turn-Off Fall Time t f V DD =-10V, R GEN =3Ω V GS =-4.5V,R L =0.5Ω - 23 - nS Total Gate Charge Q g - 55 - nC Gate-Source Charge Q gs - 10 - nC Gate-Drain Charge Q gd V DS =-10V,I D =-20A, V GS =-4.5V - 15 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS =0V,I S =-20A - - -1.2 V Diode Forward Current (Note 2) I S - - -45 A Reverse Recovery Time t rr - 47 - nS Reverse Recovery Charge Qrr TJ = 25°C, IF = -10A di/dt = 100A/μs (Note3) - 53 - nC Forward Turn-On Time t on Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production LCE20P45Q Rev : www.leiditech.com 01.06.2014

DFN3.3X3.3 EP Package Information LCE20P45Q Shanghai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86- 021 50477059 Rev : www.leiditech.com 01.06.2014