LCE1216 LEIDITECH

Document overview

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Technical content

Description

The LCE1216 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications. General Features

  • V DS = -12V,I D = -16A R DS(ON) < 22mΩ @ V GS =-2.5V R DS(ON) < 18mΩ @ V GS =-4.5V
  • Advanced trench MOSFET process technology
  • Ultra low on-resistance with low gate charge Application
  • PWM applications
  • Load switch
  • Battery charge in cellular handset D G S Schematic diagram Pin assignment DFN2X2-6L bottom view Package marking and ordering information Device Marking Device Device Package Reel Size Tape Width Quantity NCE1216 LCE1216 DFN2X2-6L - - - Absolute maximum ratings (T C =25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS -12 V Gate-Source Voltage V GS ±12 V Drain Current-Continuous I D -16 A Drain Current -Pulsed (Note 1) I DM -65 A Maximum Power Dissipation P D 18 W Operating Junction and Storage Temperature Range T J STG -55 To 150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Case (Note 2) R θJC 6.9 /W℃ LCE1216 LCE P-Channel Enhancement Mode Power MOSFET Rev : www.leiditech.com 01.06.2017

Electrical characteristics (T A =25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage V (BR) DSS V GS =0V I D =-250μA -12 - - V Zero Gate Voltage Drain Current I DSS V DS =-12V,V GS =0V - - -1 μA Gate-Body Leakage Current I GSS V GS =±12V,V DS =0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS GS D V GS =-4.5V, I D Drain-Source On-State Resistance R DS(ON) V GS =-2.5V, I D =-6.2A - 14 22 mΩ Forward Transconductance g FS V DS =-5V,I D =-6.7A 20 - - S Dynamic Characteristics (Note4) Input Capacitance C lss - 2700 - PF Output Capacitance C oss - 680 - PF Reverse Transfer Capacitance C rss V DS =-10V,V GS =0V, F=1.0MHz - 590 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 11 - nS Turn-on Rise Time t r - 35 - nS Turn-Off Delay Time t d(off) - 30 - nS Turn-Off Fall Time t f V DD =-10V,I D =-1A V GS =-4.5V,R GEN =10Ω - 10 - nS Total Gate Charge Q g - 35 48 nC Gate-Source Charge Q gs - 5 - nC Gate-Drain Charge Q gd V DS =-6V,I D =-10A, V GS =-4.5V - 10 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS =0V,I S =-8A - - -1.2 V Diode Forward Current (Note 2) I S - - -16 A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2 . % 4. Guaranteed by design, not subject to production LCE1216 Rev : www.leiditech.com 01.06.2017

  1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. LCE1216 Shanghai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86- 021 50477059 Rev : www.leiditech.com 01.06.2017