LCE0106R LEIDITECH

Document overview

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Technical content

Description

The LCE0106R uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications. General Features

  • V DS = 100V,I D = 6A R DS(ON) < 140mΩ @ V GS =10V (Typ:110m Ω)
  • High density cell design for ultra low Rdson
  • Fully characterized avalanche voltage and current
  • Excellent package for good heat dissipation Application
  • Power switching application
  • Hard switched and high frequency circuits
  • Uninterruptible power supply D G S Schematic diagram SOT-223 top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity NCE0106R LCE0106R SOT-223-3L Ø330mm 12mm 2500 units Absolute Maximum Ratings (T A =25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ±20 V Drain Current-Continuous I D 6 A Drain Current-Pulsed (Note 1) I DM 24 A Maximum Power Dissipation P D 3 W Operating Junction and Storage Temperature Range T J STG -55 To 150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) R θJA 41.7 /W℃ Electrical Characteristics (T A =25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V I D =250μA 100 110 - V Zero Gate Voltage Drain Current I DSS V DS =100V,V GS =0V - - 1 μA LCE N-Channel Enhancement Mode Power MOSFET Rev : www.leiditech.com 01.06.2015

Gate-Body Leakage Current I GSS V GS =±20V,V DS =0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS GS D =250μA 1.2 1.8 2.5 V Drain-Source On-State Resistance R DS(ON) V GS =10V, I D =5A - 110 140 mΩ Forward Transconductance g FS V DS =5V,I D =2.9A - 8 - S Dynamic Characteristics (Note4) Input Capacitance C lss - 690 - PF Output Capacitance C oss - 120 - PF Reverse Transfer Capacitance C rss V DS =25V,V GS =0V, F=1.0MHz - 90 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 11 - nS Turn-on Rise Time t r - 7.4 - nS Turn-Off Delay Time t d(off) - 35 - nS Turn-Off Fall Time t f V DD =30V,I D =2A,R L =15Ω V GS =10V,R G =2.5Ω - 9.1 - nS Total Gate Charge Q g - 15.5 nC Gate-Source Charge Q gs - 3.2 - nC Gate-Drain Charge Q gd V DS =30V,I D =3A, V GS =10V - 4.7 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS =0V,I S =6A - - 1.2 V Diode Forward Current (Note 2) I S - - 6 A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to product LCE0106R Rev : www.leiditech.com 01.06.2015

1）E AS test circuit 2）Gate charge test circuit 3）Switch Time Test Circuit LCE0106R Rev : www.leiditech.com 01.06.2015

Typical Electrical and Thermal Characteristics (curves) Figure1. Source-Drain Diode Forward Voltage Figure2. Safe operating area Figure3. Output characteristics Figure4. Transfer characteristics Figure5. Static drain-source on resistance Figure6. R DS(ON) vs Junction Temperature LCE0106R Rev : www.leiditech.com 01.06.2015

Figure7. BV DSS vs Junction Temperature Figure8. V GS(th) vs Junction Temperature Figure9. Gate charge waveforms Figure10. Capacitance Figure11. Normalized Maximum Transient Thermal Impedance LCE0106R Rev : www.leiditech.com 01.06.2015

  1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. LCE0106R Shanghai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86- 021 50477059 Rev : www.leiditech.com 01.06.2015