BAS21HT1G LEIDITECH
Document overview
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Technical content
Continuous Reverse Voltage V R
250 Vdc
F 200 mAdc Peak Forward Surge Current I FM(surge) 625 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR–5 Board,* P D 200 mW T A = 25°C Derate above 25°C 1.57 mW/°C Thermal Resistance Junction to Ambient R θJA 635 °C/W Junction and Storage T J , T stg –55 to+150 °CTemperature Range *FR–5 Minimum Pad
ELECTRICAL CHARACTERISTICS
A = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current I R µ Adc R R = 200 Vdc, T J = 150°C) – 100 Reverse Breakdown Voltage V (BR) 250 – Vdc BR = 100 µAdc) Forward Voltage V F mV F = 100 mAdc) – 1000 F = 200 mAdc) – 1250 Diode Capacitance C D – 5.0 pF R = 0, f = 1.0 MHz) Reverse Recovery Time t rr –5 0 n s F = I R = 30 mAdc, R L = 100 Ω ) Device Marking Shipping LBAS21HT1G JS 3000/Tape&Reel LBAS21HT3G JS 10000/Tape&Reel We declare that the material of product compliance with RoHS requirements. 0.1 = 200 Vdc) – Rev.A 1/3
ORDERING INFORMATION
S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Pin Configuration Rev : 01.06.2014 1/3 www.leiditech.com Dimensions SOD-323 LBAS21HT1GLBAS21HT1GLBAS21HT1GLBAS21HT1GLBAS21HT1G rf I F =1mA f = 100 MHz) I F =10mA f = 100 MHz) I F =100mA f = 100 MHz) 2.5 1.1 3.8 1.35 ΩForward resistance
Shanghai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86- 021 50477059 Rev : 01.06.2014 3/3 www.leiditech.com Millimeters Inches Symbol Min. Nom. Max. Min. Nom. Max. 0.00 0.05 0.10 0.000 0.002 0.004 A3 0.15 REF 0.006 REF b 0.25 0.32 0.40 0.010 0.012 0.016 D 1.60 1.70 1.80 0.062 0.066 0.070 L 0.08 0.003 Symbol Millimeters Inches F 1.60 0.063 G 2.85 0.112 J 0.83 0.033 K 0.63 0.025 Soldering Footprint LBAS21HT1GLBAS21HT1GLBAS21HT1GLBAS21HT1GLBAS21HT1G