L8050 LEIDITECH
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TRANSISTOR (NPN) MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbo l Parameter Value Unit V CBO Collector Base Voltage V V CEO Collector Emitter Voltage 25 V V EBO Emitte r Base Voltage 5 V I C Collector Current Continuous 0.5 A Pc Collector power dissipation 0.625 W T j Junction Temperature 150 ℃ T stg Storage Temper ature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector base breakdown voltage V(BR)CBO IC=100uA, IE=0 40 V Collector emitter breakdown voltage V (BR)CEO I C 1mA, I B V Emitter base breakdown voltage V (BR)EBO I E =100μA, I C V Collector cut off current I CBO VCB=40V, IE=0 0.1 μA Emitter cut off current I CEO VCE=20V, IE=0 0.1 μA Emitter cut off current I EBO VEB=5V, IC=0 0.1 μA DC current gain h FE(1 VCE=1V , IC= 0mA 400 h FE(2) VCE=1V, IC= 00mA Collector emitter saturation voltage V CE(sat) I C 00mA, I B 0mA V Base emitter saturation voltage V BE(sat I C 00mA, I B 0mA 1.2 V Transition frequency f T VCE= V,IC= 0mA,f=30MHZ MH z 1. EMITTER 2. BASE 3. COLLECTOR L8050 Rev : www.leiditech.com 01.06.2017 1/3
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Shanghai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86- 021 50477059 Rev : www.leiditech.com 01.06.2017 3/3