2N7002KL LEIDITECH

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Technical content

  1. FEATURES
  • We declare that the material of product compliance with RoHS requirements and Halogen Free.
  • S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.
  • ESD Protected 2. DEVICE MARKING AND ORDERING INFORMATION 3. MAXIMUM RATINGS(Ta = 25º C) – Steady State TA = 25° C TA = 85° C – t<5s TA = 25° C TA = 85° C Pulsed Drain Current (tp=10μs) Source Current (Body Diode) 4. THERMAL CHARACTERISTICS Total Device Dissipation(Note 1) – Steady State – t<5s Junction−to−Ambient(Note 1) – Steady State – t<5s Junction and Storage temperature A IS 300 mA Lead Temperature for Soldering Purposes (1/8 " from case for 10 s) ESD 2000 VGate−Source ESD Rating(HBM, Method 3015) 300 RΘJA 300 º C/W Parameter Symbol Limits Unit mW ºC PD TL 420 260 417 Unit Drain–Source Voltage VDSS Marking Shipping L2N7002KLT1G RK 3000/Tape&Reel Drain Current ID Vdc Vdc mAdc 2N7002KL S-2N7002KL Small Signal MOSFET 380 mAmps, 60 Volts N–Channel SOT-23 320 230 IDM 1.5 L2N7002KLT3G RK 10000/Tape&Reel Parameter Symbol Limits Device Gate-Source Voltage VGS ± 20 380 270 ºC−55∼+150TJ,Tstg SOT23(TO-236) Rev : www.leiditech.com 01.06.2014
  1. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) OFF CHARACTERISTICS Characteristic Drain–Source Breakdown Voltage (VGS = 0, ID = 250μAdc) Zero Gate Voltage Drain Current TJ = 25° C (VGS = 0, VDS = 60 Vdc) TJ = 125° C (VGS = 0, VDS = 50 Vdc) TJ = 25° C Gate–Body Leakage Current, Forward (VGS = 20 Vdc) Gate–Body Leakage Current, Reverse (VGS = - 20 Vdc) ON CHARACTERISTICS (Note 2) Gate Threshold Voltage (VDS = VGS, ID = 250μAdc) Negative Threshold Temperature Coefficient Static Drain–Source On–State Resistance (VGS = 10 Vdc, ID = 500 mAdc) (VGS = 5.0 Vdc, ID = 50 mAdc) Forward Transconductance (VDS = 5.0 Vdc, ID = 200 mAdc) DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time BODY–DRAIN DIODE RATINGS Diode Forward On–Voltage TJ = 25° C (IS = 115 mAdc, VGS = 0 V) TJ = 85° C 2.Pulse Test: Pulse Width ≤300 μs, Duty Cycle ≤2.0%. - 1.4 mV/ºC 500 nAdc VGS(TH)/TJ 4- - mV/ºC VSD Vdc - 0.7 - ns 19 - 12 - 3.8 - 3.4 - td(off) tr tf VGS(th) IDSS RDS(on) 1.0 VDS = 10 V, VGEN = 10 V, ID = 500 mA td(on) - 2.3 2.5 - - - 2.7 gfs mS 80 - - μAdc μAdc μAdc Ω - - Unit VBRDSS Vdc 60 - - Symbol Min. 1.0 Vdc 100 IGSSF - - 10 Typ. Max. IGSSR - - -10 Drain−to−Source Breakdown Voltage Temperature Coefficient VBRDSS/TJ - -71 pF pF Ciss - 34 - Coss Crss - 3 - - 2.2 - pF 2N7002KL S-2N7002KL Rev : www.leiditech.com 01.06.2014

6.ELRCTRICAL CHARACTERISTICS CURVES 0.4 0.8 1.2 1.6 0 1 2 3 4 5 6 ID, Drain Current(A) VDS, Drain-to-Source Voltage VGS=3V VGS=2.5V VGS=4V VGS=3.5V VGS=4.5V VGS=5V VGS=6V VGS=7,8,9,10V 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0 0.5 1 1.5 2 2.5 3 3.5 ID, Drain Current(A) VGS, Gate-to-Source Voltage(V) 150℃ 25℃ -55℃ 0 0.2 0.4 0.6 0.8 1 RDS(on), ON-Resistance(Ω) ID, Drain Current(A) VGS=5V 150℃ 25℃ -55℃ 85℃ 0 0.2 0.4 0.6 0.8 1 RDS(on) ON-Resistance(Ω) ID Drain Current(A) VGS=10V 150℃ 25℃ -55℃ 85℃ On-Region Characteristics Transfer Characteristics RDS(on) vs. ID RDS(on) vs. ID 2N7002KL S-2N7002KL Rev : www.leiditech.com 01.06.2014

6.ELRCTRICAL CHARACTERISTICS CURVES（Con.) 0.01 0.1 0 0.5 1 1.5 IS, Source Current(A) VSD Source-to-Drain Voltage(V) VGS=0V 85℃ 25℃ 0 5 10 15 20 25 30 C,Capacitor(pF) VDS, Drain-to-Source Voltage(V) Ciss Coss Crss 1.2 1.4 1.6 1.8 2.2 2.4 2.6 2 4 6 8 10 RDS(on) ON-Resistance(Ω） VGS Gate-to-Source Voltage(V) ID=500mA ID=200mA 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 2.2 -50 0 50 100 150 RDS(on), ON-Resistance(normallized) Temperataure(℃) VGS=10V VGS=5V RDS(on) vs. VGS RDS(on) vs. Temperature Capacitor vs.VDS IS vs.VSD 2N7002KL S-2N7002KL Rev : www.leiditech.com 01.06.2014

6.ELRCTRICAL CHARACTERISTICS CURVES（Con.) 0.2 0.4 0.6 0.8 1.2 1.4 -50 0 50 100 150 VGS(th), Threshold Voltage(normallized) Temperature(℃） ID=250μA VGS(th) vs. Temperature 2N7002KL S-2N7002KL Rev : www.leiditech.com 01.06.2014

7.OUTLINE AND DIMENSIONS Notes: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 8.SOLDERING FOOTPRINT 10° e L 0.012 0.35 0.54 0.018 0.02 0.69 0.014 0.021 0.029 1.20 b 0.37 E MIN NOM MAX MIN NOM D DIM MILLIMETERS INCHES 0.89 1 c 2.80 MAX A 1.11 0.035 0.04 0.044 0.004 0.44 0.5 0.015 2N7002KL S-2N7002KL Shanghai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86- 021 50477059 Rev : www.leiditech.com 01.06.2014