L1N4148BS LEIDITECH
Document overview
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Technical content
(Ta = 25°C) Parameter Symbol Limits Unit Peak reverse voltage V RM 100 DC reverse voltage V R 80 V Peak forward current I FM 150 mA Mean rectifying current I O 100 mA Surge current (1s) I surge 500 mA Junction temperature Tj 125 °C Storage temperature T stg – 55 ~ +125 °C Switching Diode Applications High speed switching Features 1) Extremely small surface mounting type. 2) High Speed. 3) High reliability. Construction Silicon epitaxial planar Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage V F – – 1.2 V I F =100mA Reverse current I R – – 0.1 µ AV R =80V Capacitance between terminals C T – 0.72 3.0 pF V R =0.5V , f=1MHz Reverse recovery time t rr – – 4 n s V R =6V , I F =10mA , R L =100 We declare that the material of product compliance with RoHS requirements. 1 2 Cathode Anode SOD882 Ω
Ordering information
Electrical characteristics
(Ta = 25°C) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. V L1N4148BS Rev : www.leiditech.com 01.06.2015 1/3
ELECTRICAL CHARACTERISTIC CURVES (Ta = 25°C) 1 2 5 O C 7 5 O C I F -- V F T a = 2 5 O C V F , I N S T A N T A N E O U S F O R W A R D V O L T A G E ( V ) I F , INSTANTANEOUS FORWARD CURRENT (mA) 0 20 40 60 80 100 2 5 O C 7 5 O C T a = 1 2 5 O C I R -- V R VR ，I N S T A N T A N E O U S R E V E R S E V O L T A G E ( V ) IR , INSTANTANEOUS REVERSE CURRENT (nA) L1N4148BS Rev : www.leiditech.com 01.06.2015 2/3
Shanghai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86- 021 50477059 Rev : www.leiditech.com 01.06.2015 3/3