L161

L161 VISHAY

Document overview

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• PDF pages: 11

Technical content

FEATURES BENEFITS APPLICATIONS © Programmable Supply © Allows User to Program © Smart Munitions Current Speed/Power Trade-Oftf © Battery-Operated © Ultra-Low Power © Minimizes System Power Systems Consumption Requirements © Miniaturized Systems ‘© Four Comparators on © Reduces Board Space Single Chip © CMOS Logic Systems © Simplifies Logic © Direct CMOS Logic Interface © Level Detectors Compatibility i y © Simplifies Single- © Window Comparators en ing Near Ground Supply Operation Input Sensing upply Oper © Oscillators and Ramp Generators

DESCRIPTION

$$. The L161 is a monolithic quad comparator featuring bipolar process, resulting in a wide range of control of both DC and AC parameters with a single operating supply voltages and currents, and power-supply current setting resistor. Operation at allowing low-drift operation over the entire military very low supply current levels with power dissipation temperature range. The L161 is available in the typically in the microwatt region makes the L161 16-pin plastic DIP. Performance grades include a ideally suited for battery operation. The military, A suffix (-55 to 125°C), industrial, B suffix programmable supply current feature allows the (-25 to 85°C), and commercial, C suffix (0 to user to optimize the speed-power trade-off to the 70°C) operation. specific application, truly minimizing system power For more information on the L161, please refer to dissipation. The L161 is fabricated in a standard Siliconix Application Note AN76-7. Ea SSeS PIN CONFIGURATION ee Dual-in-Line Package Flat Package: “=r —— oy Of lis] v+ NF 1§-—S ser ~~, By fis) ‘ser INE | — oor, we BY fa] no i — own -n, @ fia} our, v—— Son we & 2) ore wn. fig) our, Top View +n, fs) v- Top View Order Numbers: L161AL/883 Order Numbers: ‘Side Braze: L161AP, L161BP Plastic: L161CJ OO 8-41

a SCHEMATIC DIAGRAM (ONE COMPARATOR) SCHEMATIC DIAGRAM (ONE (ONE COMPARATOR) gouTeur poee ea H4 BIAS NETWORK ove (COMMON TO. 1 a Coveanarons) | — o 'ser ay | C7 ~a 1 mae | we ee 1 ial wo i i ! | a5 i \\ aa | ov- ABSOLUTE MAXIMUM RATINGS ese UTE AO Oe Supply Voltage ....cscccsecescseeesserseeesees HBV Power Dissipation (Package) * . Flat Package 2 ..--eeeeseceseeseeeeess 750 mW ‘Output Short Cireult uration cocecss Incefinite + For supply voltages < #18 V, maximum input voltage Is equal to the supply voltage. oper “55 to +125°C ** Continuous short circuit current Is allowed for case to sary ase tase temperature to +125°C and ambient temperature to eereeenrennnnnnES mp (6 Suffix) to 970°C +++ All leads welded or soldered to PC board. Derate Storage Temperature 10 mW/°C above 75°C for the flat package, 12 mW/*C (C Suffit) oe. cceeveceseseseeesees 65 to 125°C above 25°C for the plastic DIP. LOW POWER ELECTRICAL CHARACTERISTICS a LIMITS Test Conditions as Unless Otherwise Specitied)) . A B.C 2=125,85,70°C] gurrix | SUFFIX Ve =13V. Ieer=10HA [32-25,-55,0°C| Input Ofek Corrent [es | Pete fet fs nA Inout Bias Clrrent BEBO ee 8-42

LOW POWER ELECTRICAL CHARACTERISTICS * LIMITS r Vs =23V, Iser= 100A [32-25 -55,0 °C} OUTPUT — : 2 1,2 20 DC Open Looy 4 Vimv Voitage Gan Pe is[s] [Ley pm] Low Output Volaged Ru 20ko | + faef fee] [2s] v Hon Oupus Vokes! Rus 200 kay | fefes] [ee] | DYNAMIC Positive Limit v Gommen Mode Range Negative Limit ffl | Ty ye [resemerme fe Pome TTT Power Supply Rejection Ratio See Sees |e | ‘ ical |e [28 | [3] El HIGH POWER ELECTRICAL CAHRACTERISTICS * J. A Unless Otherwise Specified: 12=125,85, 70°C] sureix Vs = +115 V.Iser= 100A 132-25 -55.0 °C PARAMETER SYMBOL Reema TEMP [re] nain’]raaxe| man] mar UNIT Input Offset Vonage fale] [iy [eT] | rewcrmcren | toe Pe le{ fel fe a Input Bias Current Ls fet | ED | [| i 8-43

HIGH POWER ELECTRICAL CHARACTERISTICS * LiMiTs Test Conditions TES ified) A Untess Otherwise Specitiod) 6 as roc] guAcix Vs = 115 V, Iser= 100HA 32-25 -55,0°C| PARAMETER svwpon] EMS [ree] rve'] ant ]emat] winter DC Open Loop Avot 100 Virev Voltage Gain 100 Lew oupat Votage! Rus Oke fs [eee] [ee] [eg v Haan own Votage! Bun ake Ps feefms] [oe] | DYNAMIC Common Mode Range MR v Nesatve unt Pett [tt | 100 mV Overdrive Mode Felon Rati une vo Sour [fede] [sl [fe SUPPLY Power Su Ralacin Rat [emt dele f=] |e] ° All Outputs Low 7 3.75 Sepy ers Ls | Ree Pas [a] | “vo ao[™ NOTES: a. Refer to PROCESS OPTION FLOWCHART for additional information. B: The algebrale convention whereby the most negative value Ie @ minimum and the most postive @ maximum, Is used In is data sheet. g. Typleal values are for DESIGN AID, ONLY, not guaranteed nor. eublect to production testing 3: The output eurrent drive of the L161 Ie non-syrrmetrical This facitates the wire-ORing of two comparator outputs. @. The output pull-down current Is typically 75-100 times the pull-up current. Sot current ( Iger] and supply current (| suepiy) can be determined by the following formulas: Neer = LAVA = (2Vpe) = (=) ser? 7 ‘SET Nguepty © 21% leer 8-44

a DIE TOPOGRAPHY Se rorocnar nd Function te | yam — : ole, ole 3 +IN2 sae aan |, | ok a— |’? 48 mis 6 +INs =| 7 -INg Wa: Ae tai a Oy ® 8 +INg 6) CO RMEOCAOD | 11 9 V- (substrate) a 10 OUT, IBAJA ’ noe sr 2 ours TE RDN Traneletore 13 OUT,

1 Epi FET 15 ser

Input Blas Current vs. Supply Current 1 ‘Supply Current vs. Temperature ee iene’ aaa PE es stev Cent Ta 800 = Uh A Hr oy POC ea wy PLCLELELEETL I 22/4 eT PT PT errr os CCU TT TTT TT oLELETT TTT 1 10 100 mK 10K 40 oO 40 80 120 'suPPLY - SUPPLY CURRENT (A) T - TEMPERATURE (°C) ee n ‘SUPPLIES Slew Rate vs. Supply Current Ty 7. | 200 HF 10 ot Perey «ead AEE vot + te) oH A oe 160 eatin PT ° Pee See Janey Ane amr [TPA rer t+ is te TA esate! 8 ear PE rete acount] wa IAT Tae tration 15 38s A er ee TTI TA ‘ oe HAS eo TAT iets 3 Here ey ol ge Ht 4 “| et | = “Hr eb a ° +2 #5 410 +15 ° oO 200 400 600 800 000 Vs - SUPPLY VOLTAGE (V) Is - SUPPLY CURRENT (1A) NOTE TROP RST SN ate eae aa Tee a ar ea Saas eee 8-45

TYPICAL CHARACTERSITICS (Cont'd) Voltage Gain vs. Temperature 0 Voltage Gain vs. Supply Curent oT TT TT Tyee t8 n Ai v.-ssv i ig =t 18V Vg=t15V PEE Ti J co PTT a TTT mrrTrrrecert fi to FCCC ee vo} I TT ay “4 = A a | v rT Ty Ty ype | v 7 wie eed (im) 6g Arn TT 100 amin CAC nh Peery yet tt Cooney OTM = 40 wf ttt ert SSeS eal PT TTT ryt yt so} ETI TTT og a a CET Tr rrr CC en

40 O 40 80 120 10 100 tk 10k

T - TEMPERATURE (°C) 1g - SUPPLY CURRENT (LA) Rise Time vs. Supply Current Transfer Characteristic with One CMOS Load Veurey,2 stv TT TT SS pesca Cor SS Ss sae +10 vane a a A | yt a Aas eee a occne/4senee YING TT ° rT Trry yr ryt too Het UE Nd Vor CTT A ae (v) rrecrtytTyre yy (ua) oto 5 rLELVLiLirrrl a a a a “0 HAA S| HEE LLU Fis ap LIA] 0 hs -200 -100 0 100 200 1 10 100 Vin ~ DIFFERENTIAL (4) RISE TIME 10% TO 90% lis) Fall Time vs. Supply Current Response Time vs. Input Overdrive with One CMOS Load ‘Negative Transition ° ee na SSS Seer ‘00 Peet a | a Ea 100 BB ll a4 too fee NI LE yet N TT TT ley) SSS y At Tt (aay a en Wo Y | WN Ry = 10 MQ. | | ea Nl 5 i Si =10 100 mV 44 20 mv > PTE NTT so-so fheny Sper 0 1 10 100 "8 oO 1 2 3 FALL TIME 90% TO 10% (us) TIME (us) NOTE: The output current drive of each comparator In the L161 is non-symmetrical. The pull-up current Is typically Tre auteur current Srve ord the purcdawn current capablity w typical from 75 to 180 mes the pull-up current ee nee ee eee eee eee 8-46

TYPICAL CHARACTERSITICS (Cont'd) a Response Time vs. Input Overdrive Positive Transition 200 [rv ~109 [ [100 mv 20 mv 100 mv. wy ST Vea yt Ty tT oq 7 sl #7 | Ty DA Ft o 1 2 8 4 5 6 TIME (us) NOTE: The output eurrent drive of each comparator in the L161 Is non-syrmmetrical.. The pul-up current is typically 2{(V+) =1 -(V-)/R ger] and the pull-down current capabilty is typically from 75 to 150 times the pull-up current SSSSSSSSSSSSSSSSSSMMseFs

APPLICATIONS

The L161 is a monolithic quad micropower Processing. The circuit (Figure 1) is composed of comparator with an external control for varying its five majcr blocks -- four comparators and a AC and DC characteristics. The variation of a common bias network. Q1 - Q6 and 01 forma single programming resistor will simultaneously darlington differential amplifier with double-to-single alter parameters such as supply current, input bias ended conversion. Q6 is a dual current source current, slew rate, output drive capability, and gain whose outputs are exactly twice the current flowing By making this resistor large, operation at very through Q8. The collector current of Q8 is a small supply current levels and power dissipations function of the current supplied externally to Q9 - -- typically in the low microwatt region -- is Q10, which in turn is known as the set current or possible, The L161 is therefore ideal for systems 'seT. This set current is established by a resistor requiring minimum power drain, such as connected between the! ser terminal and a voltage battery-powered instrumentation, aerospace sys- source, most commonly the positive supply. Qt1 tems, CMOS designs, and remote security Prevents excessive current from flowing through Q9 systems. and Q10 in the event the! ser terminal is shorted to the positive supply; it has no effect on circuit The 1161 is fabricated using standard bipolar operation under normal conditions. potcccnnn4 BS CACO. |) spyscrto | ost — 1 | AvetPeAs) 1 \\ te Iser I On 1 (7 NX] cour I | +O 198 ! _ | \\ J ] == & | I i ! pS | o-v to—- oad Figure 1. Schematic of One Channel of the L161 Plus the Common Bias Network

APPLICATIONS (Cont'd) eile tk SETTING THE SET CURRENT INPUT BIAS CURRENT The set current can be expressed as: Input bias current is a function of the betas of input (V+) = (2 Vee) ~ (V-)) devices Qi - Q2 and Iset. This is difficult to 'seT = Fay q) express analytically because 6 varies greatly with ; h resi both processing and collector current; however it is where V+ is the voltage to which the contro resistor roughly proportional to the set current and can 's connected, V- fs the negative supply vonage, easily be determined experimentally (see Figure 2). Vee is the base emitter drop of Q9 or Q10 (about 0.7 V), and ger is the value of the external contro! resistor or set resistor. Equation 1 is simply a Figure 2. Input Bias Current vs. Supply derivative of Ohms Law. There is also an analytical 100 im relationship between Iset and the total supply EH Eee Ae current: EAT ava ae 'supety = (Iset (current sourced by QS to 28) 9 PES +2 ser (current sourced to the differential (nA) HH eats aan” CATT ampiiior by 08) esi er output by Q6)) 271i X 4 (the total number of comparators) CCU TCT tser (current sourced through Q11, Q10, “4 10 100 1k 10k and Q9 to V-) \\suepuy - SUPPLY CURRENT WA) = (Iset + 2Iser +2 ser) X4+IseT = 21 Iser ; GAIN The output current pulldown capability (lot) of the L161 is about 2 orders of magnitude greater than Gain varies logarithmically with changes in supply the high output drive current, (10H), which allows voltage and linearly with changes in set current. wire-ORing the outputs. lox is simply the current Primary causes are the decrease in output sourced by Q6: impedance of Q7 with decreasing supply voltage and an increase in transistor betas with increasing lon = 2 XIset (3) set current. Other AC parameters such as slew rate and transition time are also effected by set Jo is found by multiplying the current sourced by current; however, current dependent parameters the collector of Q6 by the gain such as beta and chip capacitances make a7: mathematical expressions imprecise. These relationships have been determined empirically and lor= 8 (Q7) X 2 Iser (4) are presented in Figure 3 and 4. The beta of Q7 is about 75-150. —— SSeS 8-48

Figure 3. Slew Rate vs. Supply Current 10 1000 Current With One CMOS Load

200 P SS eS Ss sii eas

180 TRANSITION [> TAS sa Cer

160 PTT recy PNET

140 MOO 7 NB) |

performance using only microwatts of power makes L161.

ee —— APPLICATIONS (Cont'd) hth cs A OVv+ Vv Rect Iguppry = 800 HA UPPER LIMIT rs) ° 15 kA. R, 100 ko Re Rasy Ca Vin © © Vour cp4o1s>*4—0 out ° 7 = o + > = Enable input ~ o LOWER LIMIT For V=+5V “ Pp= 60 Re 3 100 ka. 1Mo. Ov- Double Ended Limit Detector CMOS Line Receiver sv Qusv ee | a soona 6 As Ay k ; 18 kO 300 kA 100 ka. De Vin © B isv ov yo | ona GO > our nM Re o1

300 Ino ar hl

Your 2K, = ne “2 V@ sma fa come 560 ki. 1 T 0.001 uF A Regulated DC to DC Converter The L161 as an X100 Operational Ampitier 8-50

BPPLICATIONS (Conta) APPLICATIONS (Cont'd) SSS g sev SUPPLY = 104A, 9 +10v ser 16 amo Ra my Re 2 19a ina 5 Ma TRIP AJUST |_| 19 . Reser o Ry 100 kf tle, 200 kA ‘2Na274 = Rg 400 kf. = Re = 900 Ka JUL roost, + ' | psar2 - 1 Ke I 1 100 x0. 1 ' A Low Battery indicator Square Wave Oscillator ‘guppy = 35088 Rser2 250 ka 1OMa Re 1 racy A o YIN 3 cock °Y 12 o Ry ‘ Ei iy seri 7" 1a he | . ™ ° Re 5 6 Re = : ic 50 ko) uv May S.orae] 5 ws LIL ° ° ~ crock °Y ov whet 1M 8 A Versatile 26 Pulse Generator 8-51