KTB778 ISC

Document overview

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Technical content

INCHANGESemiconductor iscProductSpecification isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark iscSiliconPNPPowerTransistor KTB778

DESCRIPTION

  • Collector-EmitterBreakdown Voltage- :V(BR)CEO=-120V(Min)
  • GoodLinearity ofhFE
  • ComplementtoType KTD998

APPLICATIONS

  • Highpower amplifierapplications
  • Recommendfor45-50Waudio frequencyamplifier outputstage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage -120 V VCEO Collector-EmitterVoltage -120 V VEBO Emitter-BaseVoltage -5 V IC CollectorCurrent-Continuous -10 A IB BaseCurrent-Continuous -1 A PC CollectorPowerDissipation @TC=25℃ 80 W TJ JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -55~150 ℃

INCHANGESemiconductor iscProductSpecification isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark2 iscSiliconPNPPowerTransistor KTB778 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-EmitterBreakdownVoltage IC=-50mA;IB=0 -120 V VCE(sat) Collector-EmitterSaturationVoltage IC=-5.0A;IB=-0.5A -2.5 V VBE(on) Base-EmitterOnVoltage IC=-5A;VCE=-5V -1.5 V ICBO CollectorCutoffCurrent VCB=-120V;IE=0 -10 μA IEBO EmitterCutoffCurrent VEB=-5V;IC=0 -10 μA hFE DCCurrentGain IC=-1A;VCE=-5V 55 160 COB OutputCapacitance IE=0;VCB=-10V;ftest=1.0MHz 280 pF fT Current-Gain—BandwidthProduct IC=-1A;VCE=-5V 10 MHz  hFE Classifications R O 55-110 80-160