KTB1368 ISC
Document overview
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Technical content
INCHANGESemiconductor iscProductSpecification isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark1 iscSiliconPNPPowerTransistor KTB1368
DESCRIPTION
- Collector-EmitterBreakdown Voltage- :V(BR)CEO=-80V(Min)
- CollectorPowerDissipation- :PC= 25W@TC=25℃
- LowCollectorSaturationVoltage- :VCE(sat)= -1.7V(Max)@(IC=-3A,IB=-0.3A)
- ComplementtoType KTD2060
APPLICATIONS
- Designedforgeneralpurpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage -80 V VCEO Collector-EmitterVoltage -80 V VEBO Emitter-BaseVoltage -5 V IC CollectorCurrent-Continuous -4 A IB BaseCurrent-Continuous -0.4 A PC CollectorPowerDissipation @TC=25℃ 25 W TJ JunctionTemperature 150 ℃ Tstg StorageTemperature -55~150 ℃
INCHANGESemiconductor iscProductSpecification isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark2 iscSiliconPNPPowerTransistor KTB1368 ELECTRICALCHARACTERISTICS Tj=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-EmitterBreakdownVoltage IC=-50mA;IB=0 -80 V VCE(sat) Collector-EmitterSaturationVoltage IC=-3A;IB=-0.3A -1.7 V VBE(on) Base-EmitterOnVoltage IC=-3A;VCE=-5V -1.5 V ICBO CollectorCutoffCurrent VCB=-80V;IE=0 -30 μA IEBO EmitterCutoffCurrent VEB=-5V;IC=0 -100 μA hFE-1 DCCurrentGain IC=-0.5A;VCE=-5V 40 240 hFE-2 DCCurrentGain IC=-3A;VCE=-5V 15 COB OutputCapacitance IE=0;VCB=-10V;ftest=1MHz 130 pF fT Current-Gain—BandwidthProduct IC=-0.5A;VCE=-5V 9 MHz hFE-1 Classifications R O Y 40-80 70-140 120-240