KTB1367 ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
INCHANGESemiconductor iscProductSpecification isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark1 iscSiliconPNPPowerTransistor KTB1367
DESCRIPTION
- Collector-EmitterBreakdown Voltage- :V(BR)CEO=-100V(Min)
- CollectorPowerDissipation- :PC= 30W@TC=25℃
- LowCollectorSaturationVoltage- :VCE(sat)= -2.0V(Max)@(IC=-4A,IB=-0.4A)
- ComplementtoType KTD2059
APPLICATIONS
- Designedforgeneralpurpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage -100 V VCEO Collector-EmitterVoltage -100 V VEBO Emitter-BaseVoltage -5 V IC CollectorCurrent-Continuous -5 A IB BaseCurrent-Continuous -0.5 A PC CollectorPowerDissipation @TC=25℃ 30 W TJ JunctionTemperature 150 ℃ Tstg StorageTemperature -55~150 ℃
INCHANGESemiconductor iscProductSpecification isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark2 iscSiliconPNPPowerTransistor KTB1367 ELECTRICALCHARACTERISTICS Tj=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-EmitterBreakdownVoltage IC=-50mA;IB=0 -100 V VCE(sat) Collector-EmitterSaturationVoltage IC=-4A;IB=-0.4A -2.0 V VBE(on) Base-EmitterOnVoltage IC=-4A;VCE=-5V -1.5 V ICBO CollectorCutoffCurrent VCB=-100V;IE=0 -100 μA IEBO EmitterCutoffCurrent VEB=-5V;IC=0 -1 mA hFE-1 DCCurrentGain IC=-1A;VCE=-5V 40 240 hFE-2 DCCurrentGain IC=-4A;VCE=-5V 20 COB OutputCapacitance IE=0;VCB=-10V;ftest=1MHz 270 pF fT Current-Gain—BandwidthProduct IC=-1A;VCE=-5V 5 MHz hFE-1 Classifications R O Y 40-80 70-140 120-240