KTB1366 ISC
Document overview
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Technical content
INCHANGESemiconductor iscProductSpecification isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark1 iscSiliconPNPPowerTransistor KTB1366
DESCRIPTION
- Collector-EmitterBreakdown Voltage- :V(BR)CEO=-60V(Min)
- CollectorPowerDissipation- :PC= 25W@TC=25℃
- LowCollectorSaturationVoltage- :VCE(sat)= -1.0V(Max)@(IC=-2A,IB=-0.2A)
- ComplementtoType KTD2058
APPLICATIONS
- Designedforgeneralpurpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage -60 V VCEO Collector-EmitterVoltage -60 V VEBO Emitter-BaseVoltage -7 V IC CollectorCurrent-Continuous -3 A IB BaseCurrent-Continuous -0.5 A PC CollectorPowerDissipation @Ta=25℃ 2 W CollectorPowerDissipation @TC=25℃ 25 TJ JunctionTemperature 150 ℃ Tstg StorageTemperature -55~150 ℃
INCHANGESemiconductor iscProductSpecification isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark2 iscSiliconPNPPowerTransistor KTB1366 ELECTRICALCHARACTERISTICS Tj=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-EmitterBreakdownVoltage IC=-50mA;IB=0 -60 V VCE(sat) Collector-EmitterSaturationVoltage IC=-2A;IB=-0.2A -1.0 V VBE(on) Base-EmitterOnVoltage IC=-0.5A;VCE=-5V -1.0 V ICBO CollectorCutoffCurrent VCB=-60V;IE=0 -100 μA IEBO EmitterCutoffCurrent VEB=-7V;IC=0 -100 μA hFE-1 DCCurrentGain IC=-0.5A;VCE=-5V 60 200 hFE-2 DCCurrentGain IC=-3A;VCE=-5V 20 COB OutputCapacitance IE=0;VCB=-10V;ftest=1MHz 150 pF fT Current-Gain—BandwidthProduct IC=-0.5A;VCE=-5V 9 MHz SwitchingTimes ton Turn-onTime VCC= -30V,RL=15Ω, IB1=-IB2=-0.2A, 0.4 μs tstg StorageTime 1.7 μs tf FallTime 0.5 μs hFE-1 Classifications O Y 60-120 100-200