KT815A ISC

Document overview

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Technical content

INCHANGESemiconductor iscProductSpecification isc website：www.iscsemi.com isc&iscsemi isregisteredtrademark1 iscSiliconNPNPowerTransistor KT815A

DESCRIPTION

  • HighCollectorCurrent-IC=1.5A
  • HighCollector-EmitterBreakdown Voltage- :V(BR)CEO=40V(Min)
  • GoodLinearity ofhFE
  • LowSaturation Voltage

APPLICATIONS

  • Designedforpower amplifierapplications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage 60 V VCEO Collector-EmitterVoltage 40 V VEBO Emitter-BaseVoltage 5 V IC CollectorCurrent-Continuous 1.5 A ICP CollectorCurrent-Pulse 2 A PC CollectorPowerDissipation @TC=25℃ 10 W CollectorPowerDissipation @Ta=25℃ 1 TJ JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -55~150 ℃

INCHANGESemiconductor iscProductSpecification isc website：www.iscsemi.com isc&iscsemi isregisteredtrademark2 iscSiliconNPNPowerTransistor KT815A ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-BaseBreakdownVoltage IC=100μA;IE=0 60 V V(BR)CEO Collector-EmitterBreakdownVoltage IC=1mA;RBE= ∞ 40 V V(BR)EBO Emitter-BaseBreakdownVltage IE=100μA;IC=0 5 V VCE(sat) Collector-EmitterSaturationVoltage IC=500mA;IB=50mA 0.6 V VBE(sat) Base-EmitterSaturationVoltage IC=500mA;IB=50mA 1.2 V ICBO CollectorCutoffCurrent VCB=60V;IE=0 10 μA IEBO EmitterCutoffCurrent VEB=5V;IC=0 10 μA hFE-1 DCCurrentGain IC=50mA;VCE=5V 40 275 hFE-2 DCCurrentGain IC=500mA;VCE=5V 20 fT Current-Gain—BandwidthProduct IC=0.1A;VCE=5V 60 MHz Switchingtimes tf FallTime IC=500mA,RL=24Ω, IB1=IB2=50mA,VCE=12V 0.1 μs toff Turn-OffTime 0.5 μs tstg StorageTime 0.7 μs