KSE340 ISC
Document overview
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- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark1 iscSiliconNPNPowerTransistor KSE340
DESCRIPTION
- HighCollector-Emitterbreakdown voltage
- LowCollectorSaturationVoltage
- ComplementtoType KSE350
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
APPLICATIONS
- Highvoltagegeneral purposeapplications
- Suitablefortransform ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage 300 V VCEO Collector-EmitterVoltage 300 V VEBO Emitter-BaseVoltage 5 V IC CollectorCurrent-Continuous 0.5 A PC CollectorPowerDissipation @TC=25℃ 20 W CollectorPowerDissipation @Ta=25℃ 1.3 TJ JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -55~150 ℃
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark2 iscSiliconNPNPowerTransistor KSE340 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT ICBO CollectorCutoffCurrent VCB=300V;IE=0 100 μA IEBO EmitterCutoffCurrent VEB=3V;IC=0 100 μA hFE DCCurrentGain IC=50mA;VCE=-10V 30 240